CA908867A - Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts - Google Patents

Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts

Info

Publication number
CA908867A
CA908867A CA908867A CA908867DA CA908867A CA 908867 A CA908867 A CA 908867A CA 908867 A CA908867 A CA 908867A CA 908867D A CA908867D A CA 908867DA CA 908867 A CA908867 A CA 908867A
Authority
CA
Canada
Prior art keywords
silicon carbide
semiconductor device
heavily doped
ohmic contacts
doped silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA908867A
Inventor
S. Berman Herbert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Publication date
Application granted granted Critical
Publication of CA908867A publication Critical patent/CA908867A/en
Expired legal-status Critical Current

Links

CA908867A Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts Expired CA908867A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA908867T

Publications (1)

Publication Number Publication Date
CA908867A true CA908867A (en) 1972-08-29

Family

ID=36416548

Family Applications (1)

Application Number Title Priority Date Filing Date
CA908867A Expired CA908867A (en) Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts

Country Status (1)

Country Link
CA (1) CA908867A (en)

Similar Documents

Publication Publication Date Title
CA1001774A (en) Semiconductor device of the iii-v type having ohmic contacts and method of obtaining said contacts
CA951145A (en) Ohmic contact for group iii-v p-type semiconductors
AU465865B2 (en) Semiconductor device
CA1034469A (en) Germanium doped gaas layer as an ohmic contact
CA1006624A (en) Semiconductor device
CA1002208A (en) Semiconductor schottky barrier device
CA908867A (en) Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts
CA973978A (en) Schottky barrier semiconductor device
AU475901B2 (en) Semiconductor device
GB1345231A (en) Semiconductor doping
AU5617473A (en) Integrated semiconductor device
AU473668B2 (en) Semiconductor device
CA862345A (en) Semiconductor device with improved ohmic contact
CA996845A (en) N-type silicon carbide monocrystal
CA939829A (en) Ohmic contacts for semiconductor devices
AU431655B2 (en) Semiconductor device with improved ohmic contact
AU4933369A (en) Semiconductor device with improved ohmic contact
CA858135A (en) Semiconductor device provided with contacts
CA866993A (en) Ohmic contacts on semiconductors
CA866992A (en) Ohmic contacts on semiconductors
CA911613A (en) Semiconductor heterojunction device
CA913231A (en) Semiconductor device with superlattice
HU168196B (en) Ohmic contact for semiconductor element
AU464196B2 (en) Semiconductor device employing high-and-low conductivity base grids
CA896193A (en) Electrical contact for silicon carbide members