CA786296A - Method of epitaxially growing silicon carbide - Google Patents

Method of epitaxially growing silicon carbide

Info

Publication number
CA786296A
CA786296A CA786296A CA786296DA CA786296A CA 786296 A CA786296 A CA 786296A CA 786296 A CA786296 A CA 786296A CA 786296D A CA786296D A CA 786296DA CA 786296 A CA786296 A CA 786296A
Authority
CA
Canada
Prior art keywords
silicon carbide
epitaxially growing
growing silicon
epitaxially
carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA786296A
Inventor
Ebert Ekkehard
Spielmann Werner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Publication date
Application granted granted Critical
Publication of CA786296A publication Critical patent/CA786296A/en
Expired legal-status Critical Current

Links

CA786296A Method of epitaxially growing silicon carbide Expired CA786296A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA786296T

Publications (1)

Publication Number Publication Date
CA786296A true CA786296A (en) 1968-05-28

Family

ID=36248950

Family Applications (1)

Application Number Title Priority Date Filing Date
CA786296A Expired CA786296A (en) Method of epitaxially growing silicon carbide

Country Status (1)

Country Link
CA (1) CA786296A (en)

Similar Documents

Publication Publication Date Title
AU459386B2 (en) Semiconductor epitaxial growth from solution
CA947186A (en) Method for the solution growth of more perfect semiconductor crystals
CA786296A (en) Method of epitaxially growing silicon carbide
CA729096A (en) Method of growing crystals
CA918043A (en) Method of manufacturing cubic crystals of silicon carbide
CA940019A (en) Manufacture of silicon monocrystals
CA783535A (en) Method of epitaxial crystal growth
CA843390A (en) Apparatus and process for the epitaxial growth of silicon carbide
CA996845A (en) N-type silicon carbide monocrystal
CA713524A (en) Method of growing dislocation-free semiconductor crystals
CA795749A (en) Method of growing single crystals
AU430580B2 (en) Method of growing crystals
CA784203A (en) Growing of diamonds
AU265463B2 (en) Epitaxial growth of silicon crystals
AU5329669A (en) Method of growing crystals
CA782522A (en) Silicon carbide process
CA831947A (en) Epitaxial growth of germanium
CA839219A (en) Silicon crystal growing
CA845081A (en) Method of growing strain-free single crystals
AU2724763A (en) Epitaxial growth of silicon crystals
AU425753B2 (en) Method of producing crystalline silicon carbide
AU420674B2 (en) Method for growing crystals
CA835922A (en) Manufacture of rod-shaped silicon monocrystals
CA783021A (en) Method of growing oxide crystals
CA791086A (en) Processes for epitaxial crystal growth