CA3142260A1 - Procede de fabrication d'une couche de perovskite a grande vitesse - Google Patents

Procede de fabrication d'une couche de perovskite a grande vitesse

Info

Publication number
CA3142260A1
CA3142260A1 CA3142260A CA3142260A CA3142260A1 CA 3142260 A1 CA3142260 A1 CA 3142260A1 CA 3142260 A CA3142260 A CA 3142260A CA 3142260 A CA3142260 A CA 3142260A CA 3142260 A1 CA3142260 A1 CA 3142260A1
Authority
CA
Canada
Prior art keywords
perovskite
percent
perovskite solution
solution
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CA3142260A
Other languages
English (en)
Inventor
Scott Kenneth CHRISTENSEN
Qi Li
Thomas Nathaniel Tombs
Stephan J. Deluca
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Materials Corp
Original Assignee
Energy Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US16/426,191 external-priority patent/US11108007B2/en
Priority claimed from US16/426,341 external-priority patent/US11342130B2/en
Priority claimed from US16/426,439 external-priority patent/US20200377532A1/en
Application filed by Energy Materials Corp filed Critical Energy Materials Corp
Publication of CA3142260A1 publication Critical patent/CA3142260A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/24—Lead compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F13/00—Compounds containing elements of Groups 7 or 17 of the Periodic Table
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un procédé de fabrication d'une couche de pérovskite, consistant à fournir un substrat souple ; à fournir une solution de pérovskite comprenant une quantité initiale de matériaux précurseurs de pérovskite et de solvant et une concentration totale en solides comprise entre 30 pour cent et 70 pour cent en poids de sa concentration de saturation ; à déposer la solution de pérovskite sur le substrat ; à éliminer une première partie du solvant de la solution de pérovskite déposée, et à augmenter la concentration totale en solides de la solution de pérovskite à au moins 75 pour cent de sa concentration de saturation au moyen d'une première étape de séchage ; et à éliminer une seconde partie du solvant de la solution de pérovskite déposée au moyen d'une seconde étape de séchage présentant un taux d'évaporation de solvant plus élevé qui provoque une saturation ainsi qu'une réaction de conversion dans la solution de pérovskite déposée menant à la formation de cristaux de pérovskite ou à la formation d'une phase intermédiaire de pérovskite, le temps de maintien de la première étape de séchage étant au moins 5 fois plus long que le temps de maintien de la seconde étape de séchage. L'invention concerne également un procédé en ligne continu permettant de produire des dispositifs photovoltaïques à grande vitesse, ainsi qu'une solution de pérovskite destinée à être utilisée dans la fabrication d'une couche de pérovskite uniforme à grande vitesse afin de permettre une production à faible coût de dispositifs pérovskite à rendement élevé.
CA3142260A 2019-05-30 2020-05-28 Procede de fabrication d'une couche de perovskite a grande vitesse Pending CA3142260A1 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US16/426,191 US11108007B2 (en) 2019-05-30 2019-05-30 Method of making a perovskite layer at high speed
US16/426,341 US11342130B2 (en) 2019-05-30 2019-05-30 Method of making a photovoltaic device on a substrate at high speed with perovskite solution
US16/426,439 US20200377532A1 (en) 2019-05-30 2019-05-30 Perovskite solution for making a perovskite layer at high speed
US16/426,191 2019-05-30
US16/426,439 2019-05-30
US16/426,341 2019-05-30
PCT/US2020/034901 WO2020243287A1 (fr) 2019-05-30 2020-05-28 Procédé de fabrication d'une couche de pérovskite à grande vitesse

Publications (1)

Publication Number Publication Date
CA3142260A1 true CA3142260A1 (fr) 2020-12-03

Family

ID=73554168

Family Applications (1)

Application Number Title Priority Date Filing Date
CA3142260A Pending CA3142260A1 (fr) 2019-05-30 2020-05-28 Procede de fabrication d'une couche de perovskite a grande vitesse

Country Status (7)

Country Link
EP (1) EP3977529A4 (fr)
JP (1) JP2022534602A (fr)
KR (1) KR20220054249A (fr)
CN (1) CN114514624A (fr)
CA (1) CA3142260A1 (fr)
MX (1) MX2021014434A (fr)
WO (1) WO2020243287A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021159214A1 (fr) * 2020-02-12 2021-08-19 Rayleigh Solar Tech Inc. Cellules solaires pérovskite à haute performance, conception de module et procédés de fabrication associés
CN112614945B (zh) * 2020-12-16 2023-02-10 同济大学 具有沟槽阵列结构的微纳单晶柔性光电探测器及其制备
CN113845896B (zh) * 2021-09-10 2023-08-04 天津理工大学 曲面有机铵金属卤化物薄膜、制备方法、太阳能电池及应用
CN114188487B (zh) * 2021-12-10 2022-08-09 中国地质大学（北京） 利用含乙酸铵的反溶剂制备钙钛矿太阳能电池的方法
CN114203912B (zh) * 2021-12-13 2023-06-20 华能新能源股份有限公司 用于钙钛矿太阳能电池的溶剂体系和钙钛矿太阳能电池的制备方法
JP2023137773A (ja) * 2022-03-18 2023-09-29 株式会社リコー 光電変換素子、光電変換モジュール、電子機器、及び太陽電池モジュール
CN115957947B (zh) * 2022-11-29 2023-08-29 北京大学长三角光电科学研究院 涂布印刷方法及设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160005547A1 (en) * 2013-01-10 2016-01-07 Korea Research Institute Of Chemical Technology Inorganic-organic hybrid solar cell having durability and high performance
CN105702871B (zh) 2016-02-02 2020-03-31 西安交通大学 一种利用溶液抽气通气法制备钙钛矿太阳能电池中钙钛矿薄膜的方法
GB201604050D0 (en) 2016-03-09 2016-04-20 Isis Innovation A/M/X material production process with alkylamine
US10907092B2 (en) 2016-07-07 2021-02-02 University Of Central Florida Research Foundation, Inc. Methods of making highly stable perovskite-polymer composites and structures using same
JP6181261B1 (ja) 2016-09-13 2017-08-16 株式会社東芝 光電変換素子

Also Published As

Publication number Publication date
EP3977529A1 (fr) 2022-04-06
EP3977529A4 (fr) 2023-07-05
MX2021014434A (es) 2022-04-12
WO2020243287A1 (fr) 2020-12-03
KR20220054249A (ko) 2022-05-02
CN114514624A (zh) 2022-05-17
JP2022534602A (ja) 2022-08-02

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