CA2772727A1 - Method and apparatus to scribe thin film layers of cadium telluride solar cells - Google Patents
Method and apparatus to scribe thin film layers of cadium telluride solar cells Download PDFInfo
- Publication number
- CA2772727A1 CA2772727A1 CA2772727A CA2772727A CA2772727A1 CA 2772727 A1 CA2772727 A1 CA 2772727A1 CA 2772727 A CA2772727 A CA 2772727A CA 2772727 A CA2772727 A CA 2772727A CA 2772727 A1 CA2772727 A1 CA 2772727A1
- Authority
- CA
- Canada
- Prior art keywords
- pulse
- laser
- thin film
- layer
- scribing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 92
- 239000010409 thin film Substances 0.000 title claims description 100
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title 1
- 230000003287 optical effect Effects 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 230000008569 process Effects 0.000 claims abstract description 53
- 230000002123 temporal effect Effects 0.000 claims abstract description 27
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 18
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- 238000000411 transmission spectrum Methods 0.000 claims abstract description 6
- 230000000977 initiatory effect Effects 0.000 claims abstract 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 40
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000005361 soda-lime glass Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 description 72
- 239000011521 glass Substances 0.000 description 27
- 230000009286 beneficial effect Effects 0.000 description 23
- 238000005336 cracking Methods 0.000 description 21
- 239000011787 zinc oxide Substances 0.000 description 18
- 230000008901 benefit Effects 0.000 description 14
- 230000006872 improvement Effects 0.000 description 14
- 239000000835 fiber Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000002679 ablation Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000011734 sodium Substances 0.000 description 6
- 230000000087 stabilizing effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000010494 dissociation reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003913 materials processing Methods 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 208000018459 dissociative disease Diseases 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/078,787 US8890025B2 (en) | 2009-09-24 | 2011-04-01 | Method and apparatus to scribe thin film layers of cadmium telluride solar cells |
| US13/078,787 | 2011-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2772727A1 true CA2772727A1 (en) | 2012-10-01 |
Family
ID=46964788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2772727A Abandoned CA2772727A1 (en) | 2011-04-01 | 2012-03-28 | Method and apparatus to scribe thin film layers of cadium telluride solar cells |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2012213802A (ja) |
| KR (1) | KR20120112275A (ja) |
| CN (1) | CN102728955B (ja) |
| CA (1) | CA2772727A1 (ja) |
| TW (1) | TWI548105B (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019165041A1 (en) * | 2018-02-23 | 2019-08-29 | First Solar, Inc. | Photovoltaic devices with narrow scribes and methods and systems for forming the same |
| CN113594281A (zh) * | 2021-07-30 | 2021-11-02 | 成都中建材光电材料有限公司 | 一种抗热斑光伏发电玻璃及制作方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6276947B2 (ja) * | 2013-09-02 | 2018-02-07 | 株式会社ディスコ | 加工方法 |
| CN104134721A (zh) * | 2014-08-15 | 2014-11-05 | 苏州图森激光有限公司 | 一种cigs太阳能薄膜电池膜层的激光划线方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100276225B1 (ko) * | 1998-06-01 | 2000-12-15 | 구본준 | 액정표시장치의 패드 단락 방지구조 및 그 방법 |
| US6281471B1 (en) * | 1999-12-28 | 2001-08-28 | Gsi Lumonics, Inc. | Energy-efficient, laser-based method and system for processing target material |
| US7067803B2 (en) * | 2002-10-11 | 2006-06-27 | The Board Of Trustees Of The Leland Stanford Junior University | Gating device and driver for modulation of charged particle beams |
| US7126746B2 (en) * | 2003-08-19 | 2006-10-24 | Electro Scientific Industries, Inc. | Generating sets of tailored laser pulses |
| US7804043B2 (en) * | 2004-06-15 | 2010-09-28 | Laserfacturing Inc. | Method and apparatus for dicing of thin and ultra thin semiconductor wafer using ultrafast pulse laser |
| US7642205B2 (en) * | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
| WO2008150769A2 (en) * | 2007-05-31 | 2008-12-11 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
-
2012
- 2012-03-28 CA CA2772727A patent/CA2772727A1/en not_active Abandoned
- 2012-03-28 JP JP2012074462A patent/JP2012213802A/ja active Pending
- 2012-03-31 CN CN201210101825.3A patent/CN102728955B/zh not_active Expired - Fee Related
- 2012-04-02 KR KR1020120034137A patent/KR20120112275A/ko not_active Application Discontinuation
- 2012-04-02 TW TW101111738A patent/TWI548105B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019165041A1 (en) * | 2018-02-23 | 2019-08-29 | First Solar, Inc. | Photovoltaic devices with narrow scribes and methods and systems for forming the same |
| US11581453B2 (en) | 2018-02-23 | 2023-02-14 | First Solar, Inc. | Photovoltaic devices with narrow scribes and methods and systems for forming the same |
| CN113594281A (zh) * | 2021-07-30 | 2021-11-02 | 成都中建材光电材料有限公司 | 一种抗热斑光伏发电玻璃及制作方法 |
| CN113594281B (zh) * | 2021-07-30 | 2023-07-28 | 成都中建材光电材料有限公司 | 一种抗热斑光伏发电玻璃及制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102728955B (zh) | 2015-12-16 |
| CN102728955A (zh) | 2012-10-17 |
| TW201244137A (en) | 2012-11-01 |
| KR20120112275A (ko) | 2012-10-11 |
| JP2012213802A (ja) | 2012-11-08 |
| TWI548105B (zh) | 2016-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |
Effective date: 20170329 |