CA2543151A1 - Gan substrate, method of growing gan and method of producing gan substrate - Google Patents
Gan substrate, method of growing gan and method of producing gan substrate Download PDFInfo
- Publication number
- CA2543151A1 CA2543151A1 CA002543151A CA2543151A CA2543151A1 CA 2543151 A1 CA2543151 A1 CA 2543151A1 CA 002543151 A CA002543151 A CA 002543151A CA 2543151 A CA2543151 A CA 2543151A CA 2543151 A1 CA2543151 A1 CA 2543151A1
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- CA
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- Prior art keywords
- regions
- facet
- facets
- valleys
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002670071A CA2670071A1 (en) | 2001-10-09 | 2002-10-01 | Gan substrate, method of growing gan and method of producing gan substrate |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-311018 | 2001-10-09 | ||
JP2001311018 | 2001-10-09 | ||
JP2002-269387 | 2002-09-17 | ||
JP2002269387A JP3801125B2 (en) | 2001-10-09 | 2002-09-17 | Single crystal gallium nitride substrate, method for crystal growth of single crystal gallium nitride, and method for manufacturing single crystal gallium nitride substrate |
CA002406347A CA2406347C (en) | 2001-10-09 | 2002-10-01 | Gan substrate, method of growing gan and method of producing gan substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002406347A Division CA2406347C (en) | 2001-10-09 | 2002-10-01 | Gan substrate, method of growing gan and method of producing gan substrate |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002670071A Division CA2670071A1 (en) | 2001-10-09 | 2002-10-01 | Gan substrate, method of growing gan and method of producing gan substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2543151A1 true CA2543151A1 (en) | 2003-04-09 |
CA2543151C CA2543151C (en) | 2009-09-08 |
Family
ID=36577311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002543151A Expired - Fee Related CA2543151C (en) | 2001-10-09 | 2002-10-01 | Gan substrate, method of growing gan and method of producing gan substrate |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA2543151C (en) |
-
2002
- 2002-10-01 CA CA002543151A patent/CA2543151C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2543151C (en) | 2009-09-08 |
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Legal Events
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EEER | Examination request | ||
MKLA | Lapsed |