CA2493853A1 - Diodes electroluminescentes a tranchee et procedes de fabrication correspondants - Google Patents

Diodes electroluminescentes a tranchee et procedes de fabrication correspondants Download PDF

Info

Publication number
CA2493853A1
CA2493853A1 CA002493853A CA2493853A CA2493853A1 CA 2493853 A1 CA2493853 A1 CA 2493853A1 CA 002493853 A CA002493853 A CA 002493853A CA 2493853 A CA2493853 A CA 2493853A CA 2493853 A1 CA2493853 A1 CA 2493853A1
Authority
CA
Canada
Prior art keywords
trench
substrate
forming
assembly
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002493853A
Other languages
English (en)
Inventor
Michael T. Bruhns
Bradley E. Williams
Jeff Lahaye
Peter Andrews
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/610,329 external-priority patent/US6995032B2/en
Application filed by Individual filed Critical Individual
Publication of CA2493853A1 publication Critical patent/CA2493853A1/fr
Abandoned legal-status Critical Current

Links

CA002493853A 2002-07-19 2003-07-11 Diodes electroluminescentes a tranchee et procedes de fabrication correspondants Abandoned CA2493853A1 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US39748802P 2002-07-19 2002-07-19
US60/397,488 2002-07-19
US14589802P 2002-10-03 2002-10-03
US60/145,898 2002-10-03
US10/610,329 2003-06-30
US10/610,329 US6995032B2 (en) 2002-07-19 2003-06-30 Trench cut light emitting diodes and methods of fabricating same
PCT/US2003/022411 WO2004010510A2 (fr) 2002-07-19 2003-07-11 Diodes electroluminescentes a tranchee et procedes de fabrication correspondants

Publications (1)

Publication Number Publication Date
CA2493853A1 true CA2493853A1 (fr) 2004-01-29

Family

ID=34381857

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002493853A Abandoned CA2493853A1 (fr) 2002-07-19 2003-07-11 Diodes electroluminescentes a tranchee et procedes de fabrication correspondants

Country Status (1)

Country Link
CA (1) CA2493853A1 (fr)

Similar Documents

Publication Publication Date Title
US6995032B2 (en) Trench cut light emitting diodes and methods of fabricating same
US7932111B2 (en) Substrate removal process for high light extraction LEDs
US7446344B2 (en) Radiation-emitting semiconductor chip, method for production thereof and radiation-emitting component
US8680548B2 (en) Semiconductor light emitting device and method of fabricating semiconductor light emitting device
KR101028965B1 (ko) 장벽층을 구비한 발광 다이오드 및 그 제조방법
JP6419077B2 (ja) 波長変換発光デバイス
EP1956663A1 (fr) Element electroluminescent semi-conducteur au nitrure et son procede de fabrication
KR20070042214A (ko) 질화물 반도체 발광 다이오드 및 그 제조방법
KR101590235B1 (ko) 광전자 반도체 칩
EP2087509A2 (fr) Protection de la structure epitaxiale de dispositifs metalliques
KR20070044099A (ko) 질화물 반도체 발광 다이오드 및 그 제조방법
TWI713232B (zh) 用於切割發光裝置的晶圓之方法
KR100530986B1 (ko) 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법
KR100629929B1 (ko) 수직 전극 구조를 가지는 발광 다이오드
CA2493853A1 (fr) Diodes electroluminescentes a tranchee et procedes de fabrication correspondants
KR20060134490A (ko) 플립 칩 질화물반도체 발광 다이오드 및 그의 제조 방법
KR100557855B1 (ko) 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법

Legal Events

Date Code Title Description
FZDE Discontinued