CA2435607A1 - Metamorphic long wavelength high-speed photodiode - Google Patents

Metamorphic long wavelength high-speed photodiode Download PDF

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Publication number
CA2435607A1
CA2435607A1 CA002435607A CA2435607A CA2435607A1 CA 2435607 A1 CA2435607 A1 CA 2435607A1 CA 002435607 A CA002435607 A CA 002435607A CA 2435607 A CA2435607 A CA 2435607A CA 2435607 A1 CA2435607 A1 CA 2435607A1
Authority
CA
Canada
Prior art keywords
layer
semiconductor device
substrate
lattice constant
grading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002435607A
Other languages
English (en)
French (fr)
Inventor
James R. Biard
Ralph H. Johnson
James K. Guenter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2435607A1 publication Critical patent/CA2435607A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
CA002435607A 2001-01-22 2002-01-22 Metamorphic long wavelength high-speed photodiode Abandoned CA2435607A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/766,797 2001-01-22
US09/766,797 US6558973B2 (en) 2001-01-22 2001-01-22 Metamorphic long wavelength high-speed photodiode
PCT/US2002/001969 WO2002058162A2 (en) 2001-01-22 2002-01-22 Metamorphic long wavelength high-speed photodiode

Publications (1)

Publication Number Publication Date
CA2435607A1 true CA2435607A1 (en) 2002-07-25

Family

ID=25077568

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002435607A Abandoned CA2435607A1 (en) 2001-01-22 2002-01-22 Metamorphic long wavelength high-speed photodiode

Country Status (6)

Country Link
US (2) US6558973B2 (https=)
EP (1) EP1354363A2 (https=)
JP (1) JP2004521489A (https=)
AU (1) AU2002248380A1 (https=)
CA (1) CA2435607A1 (https=)
WO (1) WO2002058162A2 (https=)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
US6780703B2 (en) * 2002-08-27 2004-08-24 Freescale Semiconductor, Inc. Method for forming a semiconductor device
US7326970B2 (en) * 2005-03-11 2008-02-05 The Boeing Company Metamorphic avalanche photodetector
WO2007039891A2 (en) * 2005-10-04 2007-04-12 Passave Ltd. Burst mode pin diode for passive optical networks (pon) applications
JP2011176552A (ja) * 2010-02-24 2011-09-08 Renesas Electronics Corp 光増幅回路及びフォトカプラ
CN104838249B (zh) 2012-10-16 2018-06-22 雅培制药有限公司 包括局部脱盐系统的生物传感器设备和方法
CN108630779B (zh) * 2018-05-04 2019-12-17 中国电子科技集团公司第十三研究所 碳化硅探测器及其制备方法
WO2022256847A1 (en) * 2021-06-04 2022-12-08 Alliance For Sustainable Energy, Llc CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GaAs BY HYDRIDE VAPOR PHASE EPITAXY
US12437954B2 (en) 2022-11-02 2025-10-07 L3Harris Technologies, Inc. Substrate stack epitaxies for photocathodes for extended wavelengths
US12308198B2 (en) 2022-11-22 2025-05-20 L3Harris Technologies, Inc. Lattice matched photocathodes for extended wavelengths

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US3936856A (en) * 1974-05-28 1976-02-03 International Business Machines Corporation Space-charge-limited integrated circuit structure
DE3480631D1 (de) * 1983-06-24 1990-01-04 Nec Corp Halbleiterstruktur mit uebergitter hoher traegerdichte.
US4607272A (en) * 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
US4558336A (en) * 1984-03-02 1985-12-10 The United States Of America As Represented By The Secretary Of The Army MBE Growth technique for matching superlattices grown on GaAs substrates
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US4926226A (en) * 1988-09-06 1990-05-15 General Motors Corporation Magnetic field sensors
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5148267A (en) * 1989-09-08 1992-09-15 Hewlett-Packard Company Double heterostructure step recovery diode with internal drift field
DE19515667A1 (de) * 1995-04-28 1996-10-31 Daimler Benz Ag Halbleiteranordnung
US5969385A (en) * 1995-08-17 1999-10-19 Northrop Grumman Corporation Ultra-low power-delay product NNN/PPP logic devices
US5770868A (en) * 1995-11-08 1998-06-23 Martin Marietta Corporation GaAs substrate with compositionally graded AlGaAsSb buffer for fabrication of high-indium fets
FR2753577B1 (fr) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
US5877519A (en) * 1997-03-26 1999-03-02 Picolight Incoporated Extended wavelength opto-electronic devices
US5952701A (en) * 1997-08-18 1999-09-14 National Semiconductor Corporation Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value
FR2768556A1 (fr) * 1997-09-17 1999-03-19 Pigogiga Sa Composant semiconducteur iii-v a heterojonction
US20010042503A1 (en) * 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
CN1347581A (zh) * 1999-03-26 2002-05-01 松下电器产业株式会社 带有应变补偿层的半导体结构及其制备方法
US6320212B1 (en) * 1999-09-02 2001-11-20 Hrl Laboratories, Llc. Superlattice fabrication for InAs/GaSb/AISb semiconductor structures

Also Published As

Publication number Publication date
AU2002248380A1 (en) 2002-07-30
US6558973B2 (en) 2003-05-06
JP2004521489A (ja) 2004-07-15
WO2002058162A3 (en) 2003-08-14
WO2002058162A2 (en) 2002-07-25
US20030215971A1 (en) 2003-11-20
US20020110946A1 (en) 2002-08-15
EP1354363A2 (en) 2003-10-22
US7009224B2 (en) 2006-03-07

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Legal Events

Date Code Title Description
FZDE Discontinued