CA2412416E - Fenetre amelioree pour diode photoemissive (led) gan - Google Patents
Fenetre amelioree pour diode photoemissive (led) gan Download PDFInfo
- Publication number
- CA2412416E CA2412416E CA2412416 CA2412416E CA 2412416 E CA2412416 E CA 2412416E CA 2412416 CA2412416 CA 2412416 CA 2412416 E CA2412416 E CA 2412416E
- Authority
- CA
- Canada
- Prior art keywords
- layer
- window
- current spreading
- light emitting
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010936 titanium Substances 0.000 claims abstract description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910005855 NiOx Inorganic materials 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005253 cladding Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N Tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N 4H-1,2,4-triazol-3-amine Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- -1 Nitride compound Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 230000001419 dependent Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Abstract
La présente invention concerne une structure de fenêtre destinée à une diode photoémissive à base de nitrure de Gallium qui comprend: une couche (109) de fenêtre Mg+ P dopée d'un composé GaN, une mince couche (110) de contact métallique semi-transparente, une couche (111) de diffusion de courant amorphe formée sur la couche de contact. Cette couche de contact est constituée de NiOx/Au, et la couche de diffusion de courant est constituée d'oxyde d'étain indium. L'électrode (112) P de la diode comprend une couche d'adhésion de titane qui forme une connexion ohmique avec la couche de diffusion de courant et une connexion de diode Shottky avec la couche de fenêtre Mg+ dopée.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/626,445 | 2000-07-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2412416E true CA2412416E (fr) | 2006-07-04 |
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