CA2364817A1 - Structures de laser a dephasage, a retroaction repartie et a emission par la surface avec matrices a gain ou absorbantes - Google Patents

Structures de laser a dephasage, a retroaction repartie et a emission par la surface avec matrices a gain ou absorbantes Download PDF

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Publication number
CA2364817A1
CA2364817A1 CA002364817A CA2364817A CA2364817A1 CA 2364817 A1 CA2364817 A1 CA 2364817A1 CA 002364817 A CA002364817 A CA 002364817A CA 2364817 A CA2364817 A CA 2364817A CA 2364817 A1 CA2364817 A1 CA 2364817A1
Authority
CA
Canada
Prior art keywords
grating
surface emitting
semiconductor laser
emitting semiconductor
gain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002364817A
Other languages
English (en)
Inventor
Ali M. Shams-Zadeh-Amiri
Wei Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photonami Inc
Original Assignee
Photonami Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA002363149A external-priority patent/CA2363149A1/fr
Application filed by Photonami Inc filed Critical Photonami Inc
Priority to CA002364817A priority Critical patent/CA2364817A1/fr
Priority to RU2004121153/28A priority patent/RU2004121153A/ru
Priority to CNA028263138A priority patent/CN1689204A/zh
Priority to KR10-2004-7009131A priority patent/KR20040065264A/ko
Priority to AU2002351571A priority patent/AU2002351571A1/en
Priority to US10/316,676 priority patent/US20030147439A1/en
Priority to DE60204168T priority patent/DE60204168T2/de
Priority to JP2003555632A priority patent/JP2005513803A/ja
Priority to IL16247802A priority patent/IL162478A0/xx
Priority to AT02787246T priority patent/ATE295623T1/de
Priority to MXPA04005726A priority patent/MXPA04005726A/es
Priority to PCT/CA2002/001893 priority patent/WO2003055019A1/fr
Priority to EP02787246A priority patent/EP1454393B1/fr
Publication of CA2364817A1 publication Critical patent/CA2364817A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA002364817A 2001-11-16 2001-12-11 Structures de laser a dephasage, a retroaction repartie et a emission par la surface avec matrices a gain ou absorbantes Abandoned CA2364817A1 (fr)

Priority Applications (13)

Application Number Priority Date Filing Date Title
CA002364817A CA2364817A1 (fr) 2001-11-16 2001-12-11 Structures de laser a dephasage, a retroaction repartie et a emission par la surface avec matrices a gain ou absorbantes
EP02787246A EP1454393B1 (fr) 2001-12-11 2002-12-11 Structures laser a resonateur distribue, emettrices par la surface, dephasees, a reseaux a gain ou absorbants
DE60204168T DE60204168T2 (de) 2001-12-11 2002-12-11 Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern
IL16247802A IL162478A0 (en) 2001-12-11 2002-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
KR10-2004-7009131A KR20040065264A (ko) 2001-12-11 2002-12-11 이득 또는 흡수 격자를 갖는 위상 편이 표면 방출 ｄｆｂ레이저 구조물
AU2002351571A AU2002351571A1 (en) 2001-12-11 2002-12-11 Phase shifted surface emitting dfb laser structures with gain or absorptive gratings
US10/316,676 US20030147439A1 (en) 2001-12-11 2002-12-11 Phase shifted surface emitting DFB laser structures with gain or absorptive gratings
RU2004121153/28A RU2004121153A (ru) 2001-12-11 2002-12-11 Лазерные структуры с распределенной обратной связью и с выводом излучения через поверхность со сдвигом фазы с усилительными или поглощательными дифракционными решетками
JP2003555632A JP2005513803A (ja) 2001-12-11 2002-12-11 利得格子または吸収格子付き位相シフト面発光ｄｆｂレーザ構造
CNA028263138A CN1689204A (zh) 2001-12-11 2002-12-11 具有增益或吸收光栅区域的移相的表面发射dfb激光器结构
AT02787246T ATE295623T1 (de) 2001-12-11 2002-12-11 Phasenverschobene oberflächenemittierende dfb laserstrukturen mit verstärkenden oder absorbierenden gittern
MXPA04005726A MXPA04005726A (es) 2001-12-11 2002-12-11 Superficie de fase desplazada que emite estructuras de laser de disenos de retroalimentacion distribuida con rejillas de ganancia o de absorcion.
PCT/CA2002/001893 WO2003055019A1 (fr) 2001-12-11 2002-12-11 Structures laser a resonateur distribue, emettrices par la surface, dephasees, a reseaux a gain ou absorbants

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA002363149A CA2363149A1 (fr) 2001-11-16 2001-11-16 Structures de laser dfb a emission par la surface pour systemes de communications a large bande et reseau de ces structures
CA002364817A CA2364817A1 (fr) 2001-11-16 2001-12-11 Structures de laser a dephasage, a retroaction repartie et a emission par la surface avec matrices a gain ou absorbantes

Publications (1)

Publication Number Publication Date
CA2364817A1 true CA2364817A1 (fr) 2003-05-15

Family

ID=25682787

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002364817A Abandoned CA2364817A1 (fr) 2001-11-16 2001-12-11 Structures de laser a dephasage, a retroaction repartie et a emission par la surface avec matrices a gain ou absorbantes

Country Status (1)

Country Link
CA (1) CA2364817A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004109873A1 (fr) * 2003-06-10 2004-12-16 Photonami Inc. Procede et dispositif d'elimination de la depletion axiale des porteurs dans des lasers a contre-reaction distribuee (dfb) de second ordre ou d'ordre superieur
CN112525073A (zh) * 2020-11-19 2021-03-19 哈尔滨工业大学 一种基于布里渊增益谱的混凝土裂缝位置和宽度识别方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004109873A1 (fr) * 2003-06-10 2004-12-16 Photonami Inc. Procede et dispositif d'elimination de la depletion axiale des porteurs dans des lasers a contre-reaction distribuee (dfb) de second ordre ou d'ordre superieur
CN112525073A (zh) * 2020-11-19 2021-03-19 哈尔滨工业大学 一种基于布里渊增益谱的混凝土裂缝位置和宽度识别方法
CN112525073B (zh) * 2020-11-19 2022-06-03 哈尔滨工业大学 一种基于布里渊增益谱特征参数的结构裂缝识别方法

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Legal Events

Date Code Title Description
FZDE Discontinued