CA2337029A1 - Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates - Google Patents
Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates Download PDFInfo
- Publication number
- CA2337029A1 CA2337029A1 CA002337029A CA2337029A CA2337029A1 CA 2337029 A1 CA2337029 A1 CA 2337029A1 CA 002337029 A CA002337029 A CA 002337029A CA 2337029 A CA2337029 A CA 2337029A CA 2337029 A1 CA2337029 A1 CA 2337029A1
- Authority
- CA
- Canada
- Prior art keywords
- thin film
- substrate
- unit cells
- plane
- batio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 199
- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 239000013078 crystal Substances 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 claims abstract description 156
- 239000000463 material Substances 0.000 claims abstract description 82
- 230000001419 dependent effect Effects 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims description 150
- 229910052710 silicon Inorganic materials 0.000 claims description 142
- 239000010703 silicon Substances 0.000 claims description 142
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 134
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 25
- 229910002113 barium titanate Inorganic materials 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 230000006835 compression Effects 0.000 claims description 7
- 238000007906 compression Methods 0.000 claims description 7
- 239000002178 crystalline material Substances 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 230000005294 ferromagnetic effect Effects 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical group [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 230000003321 amplification Effects 0.000 claims 1
- 238000003199 nucleic acid amplification method Methods 0.000 claims 1
- 229910052596 spinel Inorganic materials 0.000 claims 1
- 239000011029 spinel Substances 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 8
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 67
- 229910002367 SrTiO Inorganic materials 0.000 description 37
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 26
- 230000005684 electric field Effects 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 230000004044 response Effects 0.000 description 14
- 238000010276 construction Methods 0.000 description 13
- 230000008602 contraction Effects 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- 230000010287 polarization Effects 0.000 description 12
- 238000001816 cooling Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 230000009466 transformation Effects 0.000 description 9
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000012634 fragment Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 238000000844 transformation Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000011982 device technology Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000005527 interface trap Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241001370750 Echinopsis oxygona Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12159—Interferometer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Lasers (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/126,526 | 1998-07-30 | ||
| US09/126,527 US6093242A (en) | 1996-08-05 | 1998-07-30 | Anisotropy-based crystalline oxide-on-semiconductor material |
| US09/126,526 US6023082A (en) | 1996-08-05 | 1998-07-30 | Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material |
| US09/126,129 | 1998-07-30 | ||
| US09/126,527 | 1998-07-30 | ||
| US09/126,129 US6103008A (en) | 1998-07-30 | 1998-07-30 | Silicon-integrated thin-film structure for electro-optic applications |
| PCT/US1999/017050 WO2000006812A1 (en) | 1998-07-30 | 1999-07-27 | Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2337029A1 true CA2337029A1 (en) | 2000-02-10 |
Family
ID=27383357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002337029A Abandoned CA2337029A1 (en) | 1998-07-30 | 1999-07-27 | Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1104494A1 (ja) |
| JP (1) | JP2002521309A (ja) |
| KR (1) | KR20010079590A (ja) |
| AU (1) | AU5236399A (ja) |
| CA (1) | CA2337029A1 (ja) |
| WO (1) | WO2000006812A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002082551A1 (en) * | 2001-04-02 | 2002-10-17 | Motorola, Inc. | A semiconductor structure exhibiting reduced leakage current |
| US10437082B2 (en) * | 2017-12-28 | 2019-10-08 | Tetravue, Inc. | Wide field of view electro-optic modulator and methods and systems of manufacturing and using same |
| KR102496956B1 (ko) * | 2020-10-28 | 2023-02-06 | 포항공과대학교 산학협력단 | 박막 트랜지스터 및 이의 제조 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8913450D0 (en) * | 1989-06-12 | 1989-08-02 | Philips Electronic Associated | Electrical device manufacture,particularly infrared detector arrays |
| US5295218A (en) * | 1992-09-29 | 1994-03-15 | Eastman Kodak Company | Frequency conversion in inorganic thin film waveguides by quasi-phase-matching |
| US5666305A (en) * | 1993-03-29 | 1997-09-09 | Olympus Optical Co., Ltd. | Method of driving ferroelectric gate transistor memory cell |
| US5576879A (en) * | 1994-01-14 | 1996-11-19 | Fuji Xerox Co., Ltd. | Composite optical modulator |
| US5654229A (en) * | 1995-04-26 | 1997-08-05 | Xerox Corporation | Method for replicating periodic nonlinear coefficient patterning during and after growth of epitaxial ferroelectric oxide films |
| US5830270A (en) * | 1996-08-05 | 1998-11-03 | Lockheed Martin Energy Systems, Inc. | CaTiO3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class |
-
1999
- 1999-07-27 WO PCT/US1999/017050 patent/WO2000006812A1/en not_active Application Discontinuation
- 1999-07-27 JP JP2000562590A patent/JP2002521309A/ja active Pending
- 1999-07-27 KR KR1020017001275A patent/KR20010079590A/ko not_active Application Discontinuation
- 1999-07-27 AU AU52363/99A patent/AU5236399A/en not_active Abandoned
- 1999-07-27 EP EP99937553A patent/EP1104494A1/en not_active Withdrawn
- 1999-07-27 CA CA002337029A patent/CA2337029A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000006812A1 (en) | 2000-02-10 |
| AU5236399A (en) | 2000-02-21 |
| JP2002521309A (ja) | 2002-07-16 |
| EP1104494A1 (en) | 2001-06-06 |
| KR20010079590A (ko) | 2001-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |