CA2310566A1 - Semiconductor diode - Google Patents
Semiconductor diode Download PDFInfo
- Publication number
- CA2310566A1 CA2310566A1 CA002310566A CA2310566A CA2310566A1 CA 2310566 A1 CA2310566 A1 CA 2310566A1 CA 002310566 A CA002310566 A CA 002310566A CA 2310566 A CA2310566 A CA 2310566A CA 2310566 A1 CA2310566 A1 CA 2310566A1
- Authority
- CA
- Canada
- Prior art keywords
- electrode
- curved
- semiconductor diode
- inner electrode
- surface area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000009792 diffusion process Methods 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
The invention relates to a semiconductor diode comprising two electrodes which form the cathode (20) and anode (10). Said semiconductor diode is characterized in that at least one of the electrodes is curved and the surface of the other electrode amounts to a maximum of 20 % of the product from the width of the other electrode and the inner edge length of the curved electrode. The invention also relates to an electric circuit which is constructed in such a way that it contains a semiconductor diode, whereby the semiconductor diode contains two electrodes which form the cathode (20) and anode (10). Said circuit is characterized in that at least one of the electrodes is curved and the surface of the other electrode amounts to a maximum of 20 % of the product from the width of the other electrode and the inner edge length of the curved electrode.
Description
Description Semiconductor diode The invention relates to a semiconductor diode having two electrodes which form the cathode and anode.
The invention furthermore relates to an electrical circuit containing at least one semiconductor diode having two electrodes which form the cathode and anode.
Diodes are asymmetrically constructed two-terminal networks whose resistance depends on the polarity and the magnitude of the applied voltage.
Diodes are composed of two different materials, at least one material of which is a semiconductor. The different materials may be a semiconductor and a metal, or a semiconductor with differently doped regions. The differently doped regions generally comprise p- and n-doped regions of the same semiconductor.
The following are known diodes: switching diodes, Schottky diodes, rectifier diodes, zener diodes, diacs, photodiodes, variable-capacitance diodes, PIN diodes, step recovery diodes, tunnel diodes, backward diodes.
It is known that the capacitance between the electrodes themselves and also between the individual electrodes and the substrate on which they are arranged is effected by two different mechanisms. The depletion layer capacitance and the diffusion capacitance are involved in this case.
The depletion layer capacitance arises from the fact that only a small saturation current flows in the case of a reverse-biased pn junction. A space charge is additionally present. This means that a reverse-biased diode acts like a lossy capacitor. As AMENDED SHEET
the reverse voltage increases, the depletion layer is widened. This means that the charge carrier depletion at the pn junction increases. It follows from this that the depletion layer capacitance CS decreases as the reverse voltage Ur increases. inThen the reverse voltage Ur = 0, the depletion layer capacitance CS has its maximum value. The following holds true for the maximum depletion layer capacitance CSC:
ap-s,~e C,~ = C, (Ur = 0 ) = C,o = A ~ ' 2~~°~ ~ ~"~ + "
In this case, A is the cross-sectional area of the depletion layer and Er is the relative permittivity.
For germanium it is Er,ce - 16, and for silicon it is Er,si = 20. The dependence of Cs as a function of the reverse voltage Ur is approximately given by the following relationship:
C C'°
1 + un The diffusion capacitance corresponds to an internal inertia of the diode, which is principally caused by the inertia of the minority charge carriers in the bulk regions. If the diode is operated in the forward mode, then both majority and minority carrier currents flow in the bulk regions. Although the zones are intrinsically electrically neutral, the electrons or hole charges are fed in and conducted away by separate currents (field current or diffusion current).
In the event of small, rapid changes to the forward voltage, this mechanism acts like a capacitance on account of its inertia. It is referred to as the diffusion capacitance Ca. Cd is proportional to the forward current Id and amounts to:
AMENDED SHEET
GR 97 P 2789 P - 2a -_ e.A ~ + ~. n~ .nn .I
Lp LN rh +1!D d The diffusion capacitance plays a part in fast switching operations in which a diode in the on state is abruptly changed to the off state.
AMENDED SHEET
The stored charges in the bulk regions can then disappear only by recombination, and the voltage across the diode decreases approximately exponentially.
From these equations it follows directly that the entire capacitance is proportional to the cross-sectional area of the depletion layer. For this reason, the known semiconductor diodes have linear cathode regions in which the cross-sectional area of the depletion layer is minimal. In the case of the known diodes, the capacitance cannot be reduced to a greater extent. This becomes apparent in an interfering manner principally when said diodes are used with high-frequency signals.
ESD (Electrostatic Discharge) protective diodes serve to protect an electronic component, for example a field-effect transistor, or an electrical circuit against irreversible damage caused by an electrostatic discharge, without impairing the function too much. In order to fulfill this protection function, the protective diode is connected between the component to be protected or the circuit to be protected and a grounding potential. Since the protective diode is reverse-biased, only a small reverse current flows through it. It is necessary that the diode have the smallest possible capacitance, in order that the high-frequency signal is attenuated as little as possible.
The known diodes have the disadvantage that their capacitance is so high that the high-frequency signal is attenuated and distorted to an excessively great extent.
A diode with a circular electrode geometry is disclosed in the article "The breakdown voltage of negative curvatured p+n diodes using s SOI layer", Solid-State Electronics, Vol. 41, No. 5, pp. 787-788, 1997. This article relates to diodes with large AMENDED SHEET
GR 97 P 2789 P - 3a -electrode areas. In this case, the inner electrode has an area of as much as above 20,000 um2. A
AMENDED SHEET
circular electrode geometry was chosen in this case in order to obtain spatially independent breakdown voltages.
A diode with a circular electrode geometry is furthermore disclosed in the PCT application WO 95/22842. Although this document likewise relates to curved electrodes, in this case the surface area of the curved outer electrode is significantly less than the area of the other, inner electrode. A surface area limit of 15 um2 is exceeded to a considerable extent.
A diode with a circular electrode geometry is also disclosed in the published German patent application DE 43 26 846 A1. This document likewise relates to curved electrodes, but in this case the surface area of the curved outer electrode is significantly less than the area of the other, inner electrode. The surface area limit of 15 um2 is likewise exceeded to a considerable extent.
The invention is based on the object of providing a semiconductor diode in which the smallest possible capacitance is obtained between the electrodes and also between the individual electrodes and the substrate.
In the case of a semiconductor diode of the generic type, this object is achieved according to the invention by virtue of the fact that at least one of the electrodes is curved, that the surface area of the other, inner electrode amounts to at most 20~ of the product of the width of the inner electrode and the inner edge length of the curved, outer electrode, that the surface area of the inner electrode amounts to at most 20~ of the surface area of the curved electrode, and that the inner electrode has a surface area of at mo s t 15 umz .
AMENDED SHEET
GR 97 P 2789 P - 4a -The invention thus provides for a semiconductor diode to be provided in which the inner electrode has a surface area of AMENDED SHEET
at most 15 um2 and, in accordance with the further features of the characterizing part, is chosen to be deliberately smaller than the outer, curved electrode.
The other, inner electrode may be the cathode or the anode. In this case, the curved outer electrode may be formed by the anode or the cathode.
A particularly expedient embodiment of the invention is distinguished by the fact that the surface area of the inner electrode amounts to at most 15~ of the product of the width of the inner electrode and the inner edge length of the curved electrode.
It is particularly expedient for the electrical semiconductor diode to be configured in such a way that the surface area of the inner electrode amounts to at most 15~ of the surface area of the curved electrode.
The invention furthermore provides for an electrical circuit of the generic type to be constructed in such a way that it contains a semiconductor diode, having two electrodes which form the cathode and anode, where the semiconductor diode is distinguished by the fact that at least one of the electrodes is curved, and that the surface area of the inner electrode amounts to at most 20~ of the product of the width of the inner electrode and the inner edge length of the curved electrode.
The semiconductor diode is expediently configured in such a way that the curved electrode is curved to such a great extent that the inner electrode is at least partially surrounded by the curved electrode. This embodiment of the semiconductor diode causes the capacitance to be reduced even more extensively.
In principle, the curved electrode can have any desired form. A particularly small capacitance between the AMENDED SHEET
curved electrode and the inner electrode can expediently be achieved by virtue of the fact that the curved electrode exhibits centrosymmetry.
A capacitance which is not only low but also can be determined exactly can be achieved by virtue of the fact that the curved electrode, at least in segments, has the form of an arc of a circle.
A particularly expedient embodiment of the semiconductor diode according to the invention is distinguished by the fact that the curved electrode has an annular form.
It is furthermore expedient that the inner electrode has a circular form.
A capacitance which is not only small but is also defined exactly can be achieved by virtue of the fact that the inner electrode has the form of a polygon. In this case, a polygon is understood to mean a planar structure having at least three corners.
In order further to reduce the capacitance between the curved electrode and the inner electrode, it is expedient that the inner electrode is arranged at the midpoint of the curved electrode.
Advantageous developments and special features of the invention emerge from the subclaims and the following explanation of a preferred exemplary embodiment which reference to the drawings.
In the drawings:
Figure 1 shows a plan view of a first embodiment of a semiconductor diode according to the invention;
Figure 2 shows a plan view of a known semiconductor diode, and AMENDED SHEET
Figure 3 shows a plan view of a further embodiment of a semiconductor diode according to the invention.
The two semiconductor diodes illustrated in Figure 1 are connected to one another in a parallel circuit on a structural plane that is not illustrated in the drawing.
In this case, the cathode 20 is located at the midpoint of the anode 10. The cathode 20 has a diameter dK = 2 rK, which corresponds to the minimum structure width that is possible in the process for fabricating the semiconductor diode. The edge length of an individual cathode amounts to wx = 2 ~ rK. The cathode area of an individual semiconductor diode amounts to:
AKx = ~t rK2.
In order to obtain a desired total edge length w, Nx individual components must be connected in parallel. The following holds true for the number Nx of required components: Nx = w/wx.
This produces the following total cathode area:
AKA = Nx x AKx = w ~ rK2 / ( 2 ~ rK ) - w rK / 2 Given the same total edge length, the total cathode area AKA amounts to only half of the total cathode area AK1 of the linear structure that is explained below with reference to Figure 2.
Advantageous shielding from external electromagnetic fields is also obtained by virtue of the arrangement illustrated. This arrangement has the additional advantage that a capacitance which is particularly small and can be defined exactly is obtained at the same time.
The semiconductor diodes explained with reference to Figure 2 belong to the prior art. They AMENDED SHEET
GR 97 P 2789 P - 7a - 5 have a linear structure. The total edge length w is composed of the two AMENDED SHEET
edge lengths w/2 of the cathode 50 which are directed at the anodes 40 and 60. The total cathode area AK1 amounts to:
AK1 = 2 rK x w / 2 - w x rD .
The embodiment of a semiconductor diode according to the invention that is illustrated in Figure 3 reveals that there is a narrow boundary region 120 located between the cathode 130 and the anode 110, the width of which boundary region is preferably from 0.4 ~,m to 1.3 ~,m. The width of the boundary region 120 defines the maximum current intensity between the cathode 130 and the anode 110.
AMENDED SHEET
The invention furthermore relates to an electrical circuit containing at least one semiconductor diode having two electrodes which form the cathode and anode.
Diodes are asymmetrically constructed two-terminal networks whose resistance depends on the polarity and the magnitude of the applied voltage.
Diodes are composed of two different materials, at least one material of which is a semiconductor. The different materials may be a semiconductor and a metal, or a semiconductor with differently doped regions. The differently doped regions generally comprise p- and n-doped regions of the same semiconductor.
The following are known diodes: switching diodes, Schottky diodes, rectifier diodes, zener diodes, diacs, photodiodes, variable-capacitance diodes, PIN diodes, step recovery diodes, tunnel diodes, backward diodes.
It is known that the capacitance between the electrodes themselves and also between the individual electrodes and the substrate on which they are arranged is effected by two different mechanisms. The depletion layer capacitance and the diffusion capacitance are involved in this case.
The depletion layer capacitance arises from the fact that only a small saturation current flows in the case of a reverse-biased pn junction. A space charge is additionally present. This means that a reverse-biased diode acts like a lossy capacitor. As AMENDED SHEET
the reverse voltage increases, the depletion layer is widened. This means that the charge carrier depletion at the pn junction increases. It follows from this that the depletion layer capacitance CS decreases as the reverse voltage Ur increases. inThen the reverse voltage Ur = 0, the depletion layer capacitance CS has its maximum value. The following holds true for the maximum depletion layer capacitance CSC:
ap-s,~e C,~ = C, (Ur = 0 ) = C,o = A ~ ' 2~~°~ ~ ~"~ + "
In this case, A is the cross-sectional area of the depletion layer and Er is the relative permittivity.
For germanium it is Er,ce - 16, and for silicon it is Er,si = 20. The dependence of Cs as a function of the reverse voltage Ur is approximately given by the following relationship:
C C'°
1 + un The diffusion capacitance corresponds to an internal inertia of the diode, which is principally caused by the inertia of the minority charge carriers in the bulk regions. If the diode is operated in the forward mode, then both majority and minority carrier currents flow in the bulk regions. Although the zones are intrinsically electrically neutral, the electrons or hole charges are fed in and conducted away by separate currents (field current or diffusion current).
In the event of small, rapid changes to the forward voltage, this mechanism acts like a capacitance on account of its inertia. It is referred to as the diffusion capacitance Ca. Cd is proportional to the forward current Id and amounts to:
AMENDED SHEET
GR 97 P 2789 P - 2a -_ e.A ~ + ~. n~ .nn .I
Lp LN rh +1!D d The diffusion capacitance plays a part in fast switching operations in which a diode in the on state is abruptly changed to the off state.
AMENDED SHEET
The stored charges in the bulk regions can then disappear only by recombination, and the voltage across the diode decreases approximately exponentially.
From these equations it follows directly that the entire capacitance is proportional to the cross-sectional area of the depletion layer. For this reason, the known semiconductor diodes have linear cathode regions in which the cross-sectional area of the depletion layer is minimal. In the case of the known diodes, the capacitance cannot be reduced to a greater extent. This becomes apparent in an interfering manner principally when said diodes are used with high-frequency signals.
ESD (Electrostatic Discharge) protective diodes serve to protect an electronic component, for example a field-effect transistor, or an electrical circuit against irreversible damage caused by an electrostatic discharge, without impairing the function too much. In order to fulfill this protection function, the protective diode is connected between the component to be protected or the circuit to be protected and a grounding potential. Since the protective diode is reverse-biased, only a small reverse current flows through it. It is necessary that the diode have the smallest possible capacitance, in order that the high-frequency signal is attenuated as little as possible.
The known diodes have the disadvantage that their capacitance is so high that the high-frequency signal is attenuated and distorted to an excessively great extent.
A diode with a circular electrode geometry is disclosed in the article "The breakdown voltage of negative curvatured p+n diodes using s SOI layer", Solid-State Electronics, Vol. 41, No. 5, pp. 787-788, 1997. This article relates to diodes with large AMENDED SHEET
GR 97 P 2789 P - 3a -electrode areas. In this case, the inner electrode has an area of as much as above 20,000 um2. A
AMENDED SHEET
circular electrode geometry was chosen in this case in order to obtain spatially independent breakdown voltages.
A diode with a circular electrode geometry is furthermore disclosed in the PCT application WO 95/22842. Although this document likewise relates to curved electrodes, in this case the surface area of the curved outer electrode is significantly less than the area of the other, inner electrode. A surface area limit of 15 um2 is exceeded to a considerable extent.
A diode with a circular electrode geometry is also disclosed in the published German patent application DE 43 26 846 A1. This document likewise relates to curved electrodes, but in this case the surface area of the curved outer electrode is significantly less than the area of the other, inner electrode. The surface area limit of 15 um2 is likewise exceeded to a considerable extent.
The invention is based on the object of providing a semiconductor diode in which the smallest possible capacitance is obtained between the electrodes and also between the individual electrodes and the substrate.
In the case of a semiconductor diode of the generic type, this object is achieved according to the invention by virtue of the fact that at least one of the electrodes is curved, that the surface area of the other, inner electrode amounts to at most 20~ of the product of the width of the inner electrode and the inner edge length of the curved, outer electrode, that the surface area of the inner electrode amounts to at most 20~ of the surface area of the curved electrode, and that the inner electrode has a surface area of at mo s t 15 umz .
AMENDED SHEET
GR 97 P 2789 P - 4a -The invention thus provides for a semiconductor diode to be provided in which the inner electrode has a surface area of AMENDED SHEET
at most 15 um2 and, in accordance with the further features of the characterizing part, is chosen to be deliberately smaller than the outer, curved electrode.
The other, inner electrode may be the cathode or the anode. In this case, the curved outer electrode may be formed by the anode or the cathode.
A particularly expedient embodiment of the invention is distinguished by the fact that the surface area of the inner electrode amounts to at most 15~ of the product of the width of the inner electrode and the inner edge length of the curved electrode.
It is particularly expedient for the electrical semiconductor diode to be configured in such a way that the surface area of the inner electrode amounts to at most 15~ of the surface area of the curved electrode.
The invention furthermore provides for an electrical circuit of the generic type to be constructed in such a way that it contains a semiconductor diode, having two electrodes which form the cathode and anode, where the semiconductor diode is distinguished by the fact that at least one of the electrodes is curved, and that the surface area of the inner electrode amounts to at most 20~ of the product of the width of the inner electrode and the inner edge length of the curved electrode.
The semiconductor diode is expediently configured in such a way that the curved electrode is curved to such a great extent that the inner electrode is at least partially surrounded by the curved electrode. This embodiment of the semiconductor diode causes the capacitance to be reduced even more extensively.
In principle, the curved electrode can have any desired form. A particularly small capacitance between the AMENDED SHEET
curved electrode and the inner electrode can expediently be achieved by virtue of the fact that the curved electrode exhibits centrosymmetry.
A capacitance which is not only low but also can be determined exactly can be achieved by virtue of the fact that the curved electrode, at least in segments, has the form of an arc of a circle.
A particularly expedient embodiment of the semiconductor diode according to the invention is distinguished by the fact that the curved electrode has an annular form.
It is furthermore expedient that the inner electrode has a circular form.
A capacitance which is not only small but is also defined exactly can be achieved by virtue of the fact that the inner electrode has the form of a polygon. In this case, a polygon is understood to mean a planar structure having at least three corners.
In order further to reduce the capacitance between the curved electrode and the inner electrode, it is expedient that the inner electrode is arranged at the midpoint of the curved electrode.
Advantageous developments and special features of the invention emerge from the subclaims and the following explanation of a preferred exemplary embodiment which reference to the drawings.
In the drawings:
Figure 1 shows a plan view of a first embodiment of a semiconductor diode according to the invention;
Figure 2 shows a plan view of a known semiconductor diode, and AMENDED SHEET
Figure 3 shows a plan view of a further embodiment of a semiconductor diode according to the invention.
The two semiconductor diodes illustrated in Figure 1 are connected to one another in a parallel circuit on a structural plane that is not illustrated in the drawing.
In this case, the cathode 20 is located at the midpoint of the anode 10. The cathode 20 has a diameter dK = 2 rK, which corresponds to the minimum structure width that is possible in the process for fabricating the semiconductor diode. The edge length of an individual cathode amounts to wx = 2 ~ rK. The cathode area of an individual semiconductor diode amounts to:
AKx = ~t rK2.
In order to obtain a desired total edge length w, Nx individual components must be connected in parallel. The following holds true for the number Nx of required components: Nx = w/wx.
This produces the following total cathode area:
AKA = Nx x AKx = w ~ rK2 / ( 2 ~ rK ) - w rK / 2 Given the same total edge length, the total cathode area AKA amounts to only half of the total cathode area AK1 of the linear structure that is explained below with reference to Figure 2.
Advantageous shielding from external electromagnetic fields is also obtained by virtue of the arrangement illustrated. This arrangement has the additional advantage that a capacitance which is particularly small and can be defined exactly is obtained at the same time.
The semiconductor diodes explained with reference to Figure 2 belong to the prior art. They AMENDED SHEET
GR 97 P 2789 P - 7a - 5 have a linear structure. The total edge length w is composed of the two AMENDED SHEET
edge lengths w/2 of the cathode 50 which are directed at the anodes 40 and 60. The total cathode area AK1 amounts to:
AK1 = 2 rK x w / 2 - w x rD .
The embodiment of a semiconductor diode according to the invention that is illustrated in Figure 3 reveals that there is a narrow boundary region 120 located between the cathode 130 and the anode 110, the width of which boundary region is preferably from 0.4 ~,m to 1.3 ~,m. The width of the boundary region 120 defines the maximum current intensity between the cathode 130 and the anode 110.
AMENDED SHEET
Claims (11)
1. A semiconductor diode having two electrodes which form the cathode (20, 130) and anode (10, 110), where at least one of the electrodes is curved, characterized in that the surface area of the other, inner electrode amounts to at most 20% of the product of the width of the inner electrode and the inner edge length of the curved electrode, in that the surface area of the inner electrode amounts to at most 20% of the surface area of the curved electrode, and in that the inner electrode has a surface area of at most 15 µm2.
2. The semiconductor diode as claimed in claim 1, characterized in that the surface area of the inner electrode amounts to at most 15% of the product of the width of the inner electrode and the inner edge length of the curved electrode.
3. The semiconductor diode as claimed in either of claims 1 and 2, characterized in that the surface area of the inner electrode amounts to at most 15% of the surface area of the curved electrode.
4. The semiconductor diode as claimed in one of claims 1 to 3, characterized in that the curved electrode is curved to such a great extent that the inner electrode is at least partially surrounded by the curved electrode.
5. The semiconductor diode as claimed in one of claims 1 to 4, characterized in that the curved electrode exhibits centrosymmetry.
6. The semiconductor diode as claimed in claim 5, characterized in that the curved electrode, at least in segments, has the form of an arc of a circle.
7. The semiconductor diode as claimed in claim 6, characterized in that the curved electrode has an annular form.
8. The semiconductor diode as claimed in one of claims 1 to 7, characterized in that the inner electrode has a circular form.
9. The semiconductor diode as claimed in one of claims 1 to 8, characterized in that the inner electrode has the form of a polygon.
10. The semiconductor diode as claimed in one of claims 1 to 9, characterized in that the inner electrode is arranged at the midpoint of the curved electrode.
11. An electrical circuit, characterized in that it contains at least one semiconductor diode as claimed in one of claims 1 to 10.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19746620A DE19746620A1 (en) | 1997-10-22 | 1997-10-22 | Semiconductor diode |
| DE19746620.6 | 1997-10-22 | ||
| PCT/DE1998/003018 WO1999021231A1 (en) | 1997-10-22 | 1998-10-14 | Semiconductor diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2310566A1 true CA2310566A1 (en) | 1999-04-29 |
Family
ID=7846273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002310566A Abandoned CA2310566A1 (en) | 1997-10-22 | 1998-10-14 | Semiconductor diode |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1025592B1 (en) |
| JP (1) | JP2001521289A (en) |
| KR (1) | KR100415476B1 (en) |
| CN (1) | CN1163975C (en) |
| CA (1) | CA2310566A1 (en) |
| DE (2) | DE19746620A1 (en) |
| WO (1) | WO1999021231A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102434059A (en) * | 2011-10-08 | 2012-05-02 | 刘树炎 | Anti-theft and anti-prying invisible strongbox |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004008803B3 (en) * | 2004-02-20 | 2005-10-27 | Zentrum Mikroelektronik Dresden Ag | Protective diode for protection of semiconductor circuits against electrostatic discharges |
| JP2010530619A (en) * | 2007-06-18 | 2010-09-09 | ミクロガン ゲーエムベーハー | Electrical circuit with vertical contact |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2739018B2 (en) * | 1992-10-21 | 1998-04-08 | 三菱電機株式会社 | Dielectric-isolated semiconductor device and method of manufacturing the same |
| US5477078A (en) * | 1994-02-18 | 1995-12-19 | Analog Devices, Incorporated | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
-
1997
- 1997-10-22 DE DE19746620A patent/DE19746620A1/en not_active Ceased
-
1998
- 1998-10-14 KR KR10-2000-7004308A patent/KR100415476B1/en not_active IP Right Cessation
- 1998-10-14 CA CA002310566A patent/CA2310566A1/en not_active Abandoned
- 1998-10-14 JP JP2000517450A patent/JP2001521289A/en active Pending
- 1998-10-14 CN CNB988125129A patent/CN1163975C/en not_active Expired - Fee Related
- 1998-10-14 EP EP98961009A patent/EP1025592B1/en not_active Expired - Lifetime
- 1998-10-14 WO PCT/DE1998/003018 patent/WO1999021231A1/en active IP Right Grant
- 1998-10-14 DE DE59814348T patent/DE59814348D1/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102434059A (en) * | 2011-10-08 | 2012-05-02 | 刘树炎 | Anti-theft and anti-prying invisible strongbox |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010031314A (en) | 2001-04-16 |
| DE59814348D1 (en) | 2009-04-09 |
| WO1999021231A1 (en) | 1999-04-29 |
| DE19746620A1 (en) | 1999-05-06 |
| CN1163975C (en) | 2004-08-25 |
| EP1025592B1 (en) | 2009-02-25 |
| KR100415476B1 (en) | 2004-01-24 |
| CN1283309A (en) | 2001-02-07 |
| EP1025592A1 (en) | 2000-08-09 |
| JP2001521289A (en) | 2001-11-06 |
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