CA2296028A1 - Structure d'electrode pour afficheurs haute resolution a diodes electroluminescentes organiques et procede de fabrication correspondant - Google Patents
Structure d'electrode pour afficheurs haute resolution a diodes electroluminescentes organiques et procede de fabrication correspondant Download PDFInfo
- Publication number
- CA2296028A1 CA2296028A1 CA002296028A CA2296028A CA2296028A1 CA 2296028 A1 CA2296028 A1 CA 2296028A1 CA 002296028 A CA002296028 A CA 002296028A CA 2296028 A CA2296028 A CA 2296028A CA 2296028 A1 CA2296028 A1 CA 2296028A1
- Authority
- CA
- Canada
- Prior art keywords
- conductor
- layer
- organic light
- transparent electrode
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title description 16
- 239000004020 conductor Substances 0.000 claims description 102
- 239000000463 material Substances 0.000 claims description 51
- 230000004888 barrier function Effects 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- 238000005538 encapsulation Methods 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910008479 TiSi2 Inorganic materials 0.000 claims description 6
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 76
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
L'invention se rapporte à une structure d'électrode (500) pour un afficheur à dispositifs électroluminescents organiques (10). Cette structure d'électrode comporte une électrode transparente (510) et une nervure hautement conductrice (550). Cette structure (500) assure une sortie lumineuse par la face supérieure et une faible résistance des lignes à effet d'anode commune et de cathode commune, et permet ainsi de produire un affichage à haute résolution. Enfin, cette structure rend possible la construction d'un afficheur sur une puce électronique d'attaque en vue d'un adressage à matrice active.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5235297P | 1997-07-11 | 1997-07-11 | |
| US60/052,352 | 1997-07-11 | ||
| US09/073,798 | 1998-05-07 | ||
| US09/073,798 US6016033A (en) | 1997-07-11 | 1998-05-07 | Electrode structure for high resolution organic light-emitting diode displays and method for making the same |
| PCT/US1998/013632 WO1999003309A1 (fr) | 1997-07-11 | 1998-07-02 | Structure d'electrode pour afficheurs haute resolution a diodes electroluminescentes organiques et procede de fabrication correspondant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2296028A1 true CA2296028A1 (fr) | 1999-01-21 |
Family
ID=26730513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002296028A Abandoned CA2296028A1 (fr) | 1997-07-11 | 1998-07-02 | Structure d'electrode pour afficheurs haute resolution a diodes electroluminescentes organiques et procede de fabrication correspondant |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP1021935A1 (fr) |
| CA (1) | CA2296028A1 (fr) |
| WO (1) | WO1999003309A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6366017B1 (en) | 1999-07-14 | 2002-04-02 | Agilent Technologies, Inc/ | Organic light emitting diodes with distributed bragg reflector |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4963788A (en) * | 1988-07-14 | 1990-10-16 | Planar Systems, Inc. | Thin film electroluminescent display with improved contrast |
| US5059861A (en) * | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Organic electroluminescent device with stabilizing cathode capping layer |
| EP0673590B1 (fr) * | 1992-12-14 | 1999-08-25 | United Technologies Corporation | Afficheur electroluminescent a couche mince regardable au soleil et dote d'electrodes metalliques noircies |
| US5478658A (en) * | 1994-05-20 | 1995-12-26 | At&T Corp. | Article comprising a microcavity light source |
| US5646480A (en) * | 1995-06-19 | 1997-07-08 | Northrop Grumman Corporation | Metal assist structure for an electroluminescent display |
| US5811177A (en) * | 1995-11-30 | 1998-09-22 | Motorola, Inc. | Passivation of electroluminescent organic devices |
-
1998
- 1998-07-02 WO PCT/US1998/013632 patent/WO1999003309A1/fr not_active Application Discontinuation
- 1998-07-02 EP EP98931746A patent/EP1021935A1/fr not_active Withdrawn
- 1998-07-02 CA CA002296028A patent/CA2296028A1/fr not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999003309A1 (fr) | 1999-01-21 |
| EP1021935A1 (fr) | 2000-07-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |