CA2284319A1 - Long wavelength vertical cavity laser with integrated short wavelength pump laser - Google Patents
Long wavelength vertical cavity laser with integrated short wavelength pump laser Download PDFInfo
- Publication number
- CA2284319A1 CA2284319A1 CA002284319A CA2284319A CA2284319A1 CA 2284319 A1 CA2284319 A1 CA 2284319A1 CA 002284319 A CA002284319 A CA 002284319A CA 2284319 A CA2284319 A CA 2284319A CA 2284319 A1 CA2284319 A1 CA 2284319A1
- Authority
- CA
- Canada
- Prior art keywords
- laser
- wavelength
- long wavelength
- mirror
- vertical cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000003292 glue Substances 0.000 claims abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 claims description 2
- 230000004936 stimulating effect Effects 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
- H01S5/426—Vertically stacked cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9822620A GB2342773A (en) | 1998-10-17 | 1998-10-17 | Long wavelength vertical cavity laser with integrated short wavelength pump laser |
| GB9822620.2 | 1998-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2284319A1 true CA2284319A1 (en) | 2000-04-17 |
Family
ID=10840706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002284319A Abandoned CA2284319A1 (en) | 1998-10-17 | 1999-09-28 | Long wavelength vertical cavity laser with integrated short wavelength pump laser |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA2284319A1 (de) |
| DE (1) | DE19947853A1 (de) |
| FR (1) | FR2784811A1 (de) |
| GB (1) | GB2342773A (de) |
| SE (1) | SE9903695A0 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8811448B2 (en) | 2008-09-25 | 2014-08-19 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6434180B1 (en) * | 2000-12-19 | 2002-08-13 | Lucent Technologies Inc. | Vertical cavity surface emitting laser (VCSEL) |
| WO2003001636A1 (de) | 2001-06-20 | 2003-01-03 | Infineon Technologies Ag | Photonen-emitter und datenübertragungsvorrichtung |
| DE10134825A1 (de) * | 2001-06-20 | 2003-01-09 | Infineon Technologies Ag | Photonen-Emitter und Datenübertragungsvorrichtung |
| DE10243545B4 (de) * | 2002-09-19 | 2008-05-21 | Osram Opto Semiconductors Gmbh | Optisch gepumpte Halbleiterlaservorrichtung |
| DE102006024220A1 (de) * | 2006-04-13 | 2007-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5513204A (en) * | 1995-04-12 | 1996-04-30 | Optical Concepts, Inc. | Long wavelength, vertical cavity surface emitting laser with vertically integrated optical pump |
| DE19523267A1 (de) * | 1995-06-27 | 1997-01-02 | Bosch Gmbh Robert | Lasermodul |
| US5754578A (en) * | 1996-06-24 | 1998-05-19 | W. L. Gore & Associates, Inc. | 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser |
| US5914976A (en) * | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
-
1998
- 1998-10-17 GB GB9822620A patent/GB2342773A/en not_active Withdrawn
-
1999
- 1999-09-28 CA CA002284319A patent/CA2284319A1/en not_active Abandoned
- 1999-10-05 DE DE19947853A patent/DE19947853A1/de not_active Withdrawn
- 1999-10-11 FR FR9912616A patent/FR2784811A1/fr not_active Withdrawn
- 1999-10-14 SE SE9903695A patent/SE9903695A0/sv not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8811448B2 (en) | 2008-09-25 | 2014-08-19 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| SE9903695D0 (sv) | 1999-10-14 |
| FR2784811A1 (fr) | 2000-04-21 |
| SE9903695L (de) | 1900-01-01 |
| GB2342773A (en) | 2000-04-19 |
| GB9822620D0 (en) | 1998-12-09 |
| SE9903695A0 (sv) | 2000-04-18 |
| DE19947853A1 (de) | 2000-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Dead |