CA2260510A1 - Methode d'imagerie a faisceau ionique focalise - Google Patents

Methode d'imagerie a faisceau ionique focalise Download PDF

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Publication number
CA2260510A1
CA2260510A1 CA002260510A CA2260510A CA2260510A1 CA 2260510 A1 CA2260510 A1 CA 2260510A1 CA 002260510 A CA002260510 A CA 002260510A CA 2260510 A CA2260510 A CA 2260510A CA 2260510 A1 CA2260510 A1 CA 2260510A1
Authority
CA
Canada
Prior art keywords
integrated circuit
analysing
areas
image
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002260510A
Other languages
English (en)
Inventor
Michael Phaneuf
Dick James
Julia Elvidge
Terry Ludlow
Louise Weaver
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chipworks Inc
Original Assignee
Chipworks Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipworks Inc filed Critical Chipworks Inc
Publication of CA2260510A1 publication Critical patent/CA2260510A1/fr
Abandoned legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
    • G01N23/2258—Measuring secondary ion emission, e.g. secondary ion mass spectrometry [SIMS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Molecular Biology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Pathology (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
CA002260510A 1998-01-28 1999-01-28 Methode d'imagerie a faisceau ionique focalise Abandoned CA2260510A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7287398P 1998-01-28 1998-01-28
US60/072,873 1998-01-28

Publications (1)

Publication Number Publication Date
CA2260510A1 true CA2260510A1 (fr) 1999-07-28

Family

ID=22110262

Family Applications (3)

Application Number Title Priority Date Filing Date
CA002260440A Expired - Lifetime CA2260440C (fr) 1998-01-28 1999-01-28 Systeme et methode automatiques d'imagerie par faisceau ionique focalise
CA002260510A Abandoned CA2260510A1 (fr) 1998-01-28 1999-01-28 Methode d'imagerie a faisceau ionique focalise
CA002260436A Expired - Lifetime CA2260436C (fr) 1998-01-28 1999-01-28 Methode automatisee d'analyse de circuits

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CA002260440A Expired - Lifetime CA2260440C (fr) 1998-01-28 1999-01-28 Systeme et methode automatiques d'imagerie par faisceau ionique focalise

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA002260436A Expired - Lifetime CA2260436C (fr) 1998-01-28 1999-01-28 Methode automatisee d'analyse de circuits

Country Status (3)

Country Link
US (2) US6288393B1 (fr)
CA (3) CA2260440C (fr)
PL (1) PL331114A1 (fr)

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US20030138709A1 (en) * 2001-11-09 2003-07-24 Burbank Daniel P. Wafer fabrication having improved laserwise alignment recovery
US20050103272A1 (en) * 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
US7207018B2 (en) * 2004-08-04 2007-04-17 Semiconductor Insights Inc. Method and apparatus for locating short circuit faults in an integrated circuit layout
US7365310B2 (en) * 2005-06-27 2008-04-29 Agilent Technologies, Inc. Increased depth of field for high resolution imaging for a matrix-based ion source
US20070031027A1 (en) * 2005-08-04 2007-02-08 Chipworks Inc. Method and system for vertically aligning tile images of an area of interest of an integrated circuit
US7498181B2 (en) * 2005-09-29 2009-03-03 Chipworks Inc. Method of preparing an integrated circuit die for imaging
CA2521675C (fr) * 2005-09-29 2009-11-24 Chipworks Inc Methode de preparation d'un de a circuits integres pour imagerie
CA2540238A1 (fr) * 2006-03-15 2007-09-15 Global Intellectual Strategies Methode et systeme de localisation d'une structure d'interet dans un circuit integre
CA2605234C (fr) * 2007-10-03 2015-05-05 Semiconductor Insights Inc. Methode de tracage local de la connectivite, et representations schematiques resultantes
US7937678B2 (en) * 2008-06-11 2011-05-03 Infineon Technologies Ag System and method for integrated circuit planar netlist interpretation
DE102009001910A1 (de) * 2009-03-26 2010-09-30 Carl Zeiss Nts Gmbh Verfahren und Vorrichtung zur Erzeugung dreidimensionaler Bilddaten
WO2010135075A1 (fr) * 2009-05-20 2010-11-25 Carl Zeiss Smt Inc. Procédé de balayage
US9123502B2 (en) 2009-05-20 2015-09-01 Carl Zeiss Microscopy, Llc Scan method
JP5751935B2 (ja) 2011-06-06 2015-07-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料作製方法
CA2791249C (fr) 2011-11-10 2014-02-25 Semiconductor Insights Inc. Methode et systeme de destratification d'un echantillon par faisceau d'ion et methode de controle connexe
US9318395B2 (en) * 2011-11-29 2016-04-19 Kla-Tencor Corporation Systems and methods for preparation of samples for sub-surface defect review
US9530199B1 (en) * 2015-07-13 2016-12-27 Applied Materials Israel Ltd Technique for measuring overlay between layers of a multilayer structure
EP3236486A1 (fr) 2016-04-22 2017-10-25 Carl Zeiss Microscopy GmbH Procédé pour produire une image composite d'un objet et dispositif à faisceau de particules pour mettre en oeuvre le procédé
CA3120208A1 (fr) * 2018-11-21 2020-05-28 Techinsights Inc. Systeme et procede de destructuration par faisceau d'ions, echantillon destructure ameliore de maniere topologique produit par ces derniers et procedes et systemes d'imagerie asso cies
US11282670B1 (en) * 2020-12-29 2022-03-22 Fei Company Slice depth reconstruction of charged particle images using model simulation for improved generation of 3D sample images

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Also Published As

Publication number Publication date
PL331114A1 (en) 1999-08-02
US6288393B1 (en) 2001-09-11
CA2260440A1 (fr) 1999-07-28
CA2260436A1 (fr) 1999-07-28
CA2260436C (fr) 2007-11-27
US6453063B1 (en) 2002-09-17
CA2260440C (fr) 2007-08-28

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Legal Events

Date Code Title Description
FZDE Discontinued
FZDE Discontinued

Effective date: 20040128