CA2072247C - Optical integrated circuitry - Google Patents

Optical integrated circuitry

Info

Publication number
CA2072247C
CA2072247C CA002072247A CA2072247A CA2072247C CA 2072247 C CA2072247 C CA 2072247C CA 002072247 A CA002072247 A CA 002072247A CA 2072247 A CA2072247 A CA 2072247A CA 2072247 C CA2072247 C CA 2072247C
Authority
CA
Canada
Prior art keywords
devices
integrated circuit
full functioning
optical integrated
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002072247A
Other languages
English (en)
French (fr)
Other versions
CA2072247A1 (en
Inventor
Anthony Fredric John Levi
Samuel Leverte Mccall
Richart Elliott Slusher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2072247A1 publication Critical patent/CA2072247A1/en
Application granted granted Critical
Publication of CA2072247C publication Critical patent/CA2072247C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
CA002072247A 1991-10-16 1992-06-24 Optical integrated circuitry Expired - Fee Related CA2072247C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/777,888 US5148504A (en) 1991-10-16 1991-10-16 Optical integrated circuit designed to operate by use of photons
US777,888 1991-10-16

Publications (2)

Publication Number Publication Date
CA2072247A1 CA2072247A1 (en) 1993-04-17
CA2072247C true CA2072247C (en) 1997-03-25

Family

ID=25111610

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002072247A Expired - Fee Related CA2072247C (en) 1991-10-16 1992-06-24 Optical integrated circuitry

Country Status (7)

Country Link
US (1) US5148504A (index.php)
EP (1) EP0541247A1 (index.php)
JP (1) JPH05218386A (index.php)
CA (1) CA2072247C (index.php)
NO (1) NO923989L (index.php)
PT (1) PT100954A (index.php)
TW (1) TW246748B (index.php)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5497140A (en) * 1992-08-12 1996-03-05 Micron Technology, Inc. Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
USRE42773E1 (en) 1992-06-17 2011-10-04 Round Rock Research, Llc Method of manufacturing an enclosed transceiver
US6045652A (en) * 1992-06-17 2000-04-04 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5776278A (en) 1992-06-17 1998-07-07 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5779839A (en) * 1992-06-17 1998-07-14 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
DE4345610B4 (de) * 1992-06-17 2013-01-03 Micron Technology Inc. Verfahren zur Herstellung einer Hochfrequenz-Identifikationseinrichtung (HFID)
US7158031B2 (en) * 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
DE4312881C1 (de) * 1993-04-20 1994-03-17 Fraunhofer Ges Forschung Substrat-Halbzeug für optisch-elektrische Hybridschaltungen und Verfahren zu seiner Herstellung
US5751466A (en) * 1996-01-11 1998-05-12 University Of Alabama At Huntsville Photonic bandgap apparatus and method for delaying photonic signals
US5988510A (en) * 1997-02-13 1999-11-23 Micron Communications, Inc. Tamper resistant smart card and method of protecting data in a smart card
US6329213B1 (en) 1997-05-01 2001-12-11 Micron Technology, Inc. Methods for forming integrated circuits within substrates
US6339385B1 (en) 1997-08-20 2002-01-15 Micron Technology, Inc. Electronic communication devices, methods of forming electrical communication devices, and communication methods
US6262830B1 (en) 1997-09-16 2001-07-17 Michael Scalora Transparent metallo-dielectric photonic band gap structure
US5907427A (en) 1997-10-24 1999-05-25 Time Domain Corporation Photonic band gap device and method using a periodicity defect region to increase photonic signal delay
US6028693A (en) * 1998-01-14 2000-02-22 University Of Alabama In Huntsville Microresonator and associated method for producing and controlling photonic signals with a photonic bandgap delay apparatus
US6744552B2 (en) * 1998-04-02 2004-06-01 Michael Scalora Photonic signal frequency up and down-conversion using a photonic band gap structure
US6304366B1 (en) 1998-04-02 2001-10-16 Michael Scalora Photonic signal frequency conversion using a photonic band gap structure
US6396617B1 (en) 1999-05-17 2002-05-28 Michael Scalora Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay
US6273339B1 (en) 1999-08-30 2001-08-14 Micron Technology, Inc. Tamper resistant smart card and method of protecting data in a smart card
WO2001023948A1 (en) 1999-09-30 2001-04-05 Aguanno Giuseppe D Efficient non-linear phase shifting using a photonic band gap structure
US6339493B1 (en) 1999-12-23 2002-01-15 Michael Scalora Apparatus and method for controlling optics propagation based on a transparent metal stack
US6414780B1 (en) 1999-12-23 2002-07-02 D'aguanno Giuseppe Photonic signal reflectivity and transmissivity control using a photonic band gap structure
US6392257B1 (en) 2000-02-10 2002-05-21 Motorola Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US6693033B2 (en) * 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
JP2004522982A (ja) * 2000-02-17 2004-07-29 ナノヴェイション テクノロジーズ インコーポレイテッド 封じ込め作用の強い偏波無依存性シングルモードリッジ光導波路
WO2001093336A1 (en) 2000-05-31 2001-12-06 Motorola, Inc. Semiconductor device and method for manufacturing the same
AU2001277001A1 (en) 2000-07-24 2002-02-05 Motorola, Inc. Heterojunction tunneling diodes and process for fabricating same
JP4638005B2 (ja) * 2000-08-28 2011-02-23 ルネサスエレクトロニクス株式会社 半導体装置
US20020096683A1 (en) 2001-01-19 2002-07-25 Motorola, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
WO2002082551A1 (en) 2001-04-02 2002-10-17 Motorola, Inc. A semiconductor structure exhibiting reduced leakage current
JP2003015175A (ja) 2001-04-27 2003-01-15 Mitsubishi Electric Corp 固体光源装置
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) * 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6639249B2 (en) * 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US20030026310A1 (en) * 2001-08-06 2003-02-06 Motorola, Inc. Structure and method for fabrication for a lighting device
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
WO2003017372A1 (de) * 2001-08-14 2003-02-27 Infineon Technologies Ag Photodiodenanordnung mit zwei photodioden
US6673667B2 (en) * 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US20030071327A1 (en) 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) * 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6806202B2 (en) 2002-12-03 2004-10-19 Motorola, Inc. Method of removing silicon oxide from a surface of a substrate
US6963090B2 (en) 2003-01-09 2005-11-08 Freescale Semiconductor, Inc. Enhancement mode metal-oxide-semiconductor field effect transistor
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7286770B2 (en) * 2003-07-18 2007-10-23 International Business Machines Corporation Fiber optic transmission lines on an SOC
US7570849B2 (en) * 2005-06-21 2009-08-04 Hewlett-Packard Development Company, L.P. Integrated circuit device having optically coupled layers
US7352602B2 (en) 2005-12-30 2008-04-01 Micron Technology, Inc. Configurable inputs and outputs for memory stacking system and method
EP2698598B1 (en) 2006-10-23 2015-12-02 J.A. Woollam Co., Inc. System and method for setting and compensating errors in AOI and POI of a beam of EM radiation
US7469085B1 (en) * 2007-07-12 2008-12-23 International Business Machines Corporation Method and apparatus for minimizing propagation losses in wavelength selective filters
US20090317033A1 (en) * 2008-06-20 2009-12-24 Industrial Technology Research Institute Integrated circuit and photonic board thereof
KR20100067487A (ko) * 2008-12-11 2010-06-21 삼성전자주식회사 테스트 인터페이스 장치, 테스트 시스템 및 광 인터페이스 메모리 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2152464B1 (index.php) * 1971-09-16 1974-05-31 Thomson Csf
FR2613826B1 (fr) * 1987-04-07 1990-10-26 Commissariat Energie Atomique Capteur de deplacement en optique integree
US4762382A (en) * 1987-06-29 1988-08-09 Honeywell Inc. Optical interconnect circuit for GaAs optoelectronics and Si VLSI/VHSIC
DE3815293A1 (de) * 1988-05-05 1989-11-16 Licentia Gmbh Dreidimensional angeordnete wellenleiter

Also Published As

Publication number Publication date
NO923989L (no) 1993-04-19
TW246748B (index.php) 1995-05-01
US5148504A (en) 1992-09-15
NO923989D0 (no) 1992-10-14
EP0541247A1 (en) 1993-05-12
CA2072247A1 (en) 1993-04-17
PT100954A (pt) 1994-05-31
JPH05218386A (ja) 1993-08-27

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