CA2055673A1 - Semiconductor optical devices with np current blocking layers of wide-band gap materials - Google Patents

Semiconductor optical devices with np current blocking layers of wide-band gap materials

Info

Publication number
CA2055673A1
CA2055673A1 CA2055673A CA2055673A CA2055673A1 CA 2055673 A1 CA2055673 A1 CA 2055673A1 CA 2055673 A CA2055673 A CA 2055673A CA 2055673 A CA2055673 A CA 2055673A CA 2055673 A1 CA2055673 A1 CA 2055673A1
Authority
CA
Canada
Prior art keywords
current blocking
blocking layers
band gap
semiconductor optical
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2055673A
Other languages
French (fr)
Other versions
CA2055673C (en
Inventor
Michinori Irikawa
Masayuki Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2055673A1 publication Critical patent/CA2055673A1/en
Application granted granted Critical
Publication of CA2055673C publication Critical patent/CA2055673C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

A semiconductor optical device comprising a mesa shaped double heterostructure having an active layer on an InP substrate, and pn junction current blocking layers embedded at all sides of the said double heterostructure, wherein at least portion of said current blocking layers consists of a semiconductor layer lattice-matched to InP and having a band gap larger than that of the InP at a room temperature. Therefore, the current blocking characteristics of the current blocking layer is improved so that the increase of leakage current under operating condition of high temperature and high output power is well suppressed, and the nonlinearity in the optical output-current characteristic is drastically reduced even under such operating conditions.
CA002055673A 1990-11-16 1991-11-15 Semiconductor optical devices with np current blocking layers of wide-band gap materials Expired - Fee Related CA2055673C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32648190 1990-11-28
JP2-326481 1990-11-28

Publications (2)

Publication Number Publication Date
CA2055673A1 true CA2055673A1 (en) 1992-05-17
CA2055673C CA2055673C (en) 1998-07-28

Family

ID=18188299

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002055673A Expired - Fee Related CA2055673C (en) 1990-11-16 1991-11-15 Semiconductor optical devices with np current blocking layers of wide-band gap materials

Country Status (1)

Country Link
CA (1) CA2055673C (en)

Also Published As

Publication number Publication date
CA2055673C (en) 1998-07-28

Similar Documents

Publication Publication Date Title
GB2293045A (en) Strained quantum well structure
EP0201930A3 (en) Light emitting semiconductor device
JPS62190780A (en) Phototransistor
CA2085337A1 (en) Buried-type semiconductor laser device
US4542511A (en) Semi-conductor lasers
US5488231A (en) Metal/semiconductor junction Schottky diode optical device using a distortion grown layer
CA1251549A (en) Semiconductor light emitting device
EP0239635B1 (en) Nonlinear and bistable optical device
EP0304048A3 (en) A planar type heterostructure avalanche photodiode
CA2055673A1 (en) Semiconductor optical devices with np current blocking layers of wide-band gap materials
JPS59103389A (en) Superconducting element and its manufacturing method
US5936990A (en) Semiconductor laser
JPH02121382A (en) Method for manufacturing a buried stripe semiconductor laser and the semiconductor laser
JP3047055B2 (en) Heterojunction type phototransistor
JPH11133367A5 (en)
KR20010070459A (en) Dopant diffusion barrier layer for use in III-V structures
JPS5533075A (en) Mesa semiconductor device
US3444442A (en) Avalanche transistor having reduced width in depletion region adjacent gate surface
EP0478463B1 (en) Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
JPH04199587A (en) Optical semiconductor device
JPH06163878A (en) Semiconductor device
JPS5654080A (en) Avalanche photodiode
JPH0621566A (en) Extremely low current transmission type semiconductor element and semiconductor laser using the same
JPS55125684A (en) Semiconductor photodetector element
JPS55125692A (en) Semiconductor laser

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed