CA2030825A1 - Methode de formage d'une diode shottky - Google Patents

Methode de formage d'une diode shottky

Info

Publication number
CA2030825A1
CA2030825A1 CA2030825A CA2030825A CA2030825A1 CA 2030825 A1 CA2030825 A1 CA 2030825A1 CA 2030825 A CA2030825 A CA 2030825A CA 2030825 A CA2030825 A CA 2030825A CA 2030825 A1 CA2030825 A1 CA 2030825A1
Authority
CA
Canada
Prior art keywords
forming
shottky diode
substrate
diode
shottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2030825A
Other languages
English (en)
Other versions
CA2030825C (fr
Inventor
Takao Yonehara
Hiroshi Kawarada
Jing Sheng Ma
Akio Hiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CA2030825A1 publication Critical patent/CA2030825A1/fr
Application granted granted Critical
Publication of CA2030825C publication Critical patent/CA2030825C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
    • H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6603—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
CA002030825A 1990-03-27 1990-11-26 Methode de formage d'une diode shottky Expired - Lifetime CA2030825C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2080012A JPH03278463A (ja) 1990-03-27 1990-03-27 ショットキーダイオードの形成方法
JP2-080012 1990-03-27

Publications (2)

Publication Number Publication Date
CA2030825A1 true CA2030825A1 (fr) 1992-05-27
CA2030825C CA2030825C (fr) 1995-10-31

Family

ID=13706411

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002030825A Expired - Lifetime CA2030825C (fr) 1990-03-27 1990-11-26 Methode de formage d'une diode shottky

Country Status (3)

Country Link
US (1) US5219769A (fr)
JP (1) JPH03278463A (fr)
CA (1) CA2030825C (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352493A (en) * 1991-05-03 1994-10-04 Veniamin Dorfman Method for forming diamond-like nanocomposite or doped-diamond-like nanocomposite films
US5718976A (en) * 1991-05-03 1998-02-17 Advanced Refractory Technologies, Inc. Erosion resistant diamond-like nanocomposite coatings for optical components
US5786068A (en) * 1991-05-03 1998-07-28 Advanced Refractory Technologies, Inc. Electrically tunable coatings
US5728465A (en) * 1991-05-03 1998-03-17 Advanced Refractory Technologies, Inc. Diamond-like nanocomposite corrosion resistant coatings
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
JP3755904B2 (ja) * 1993-05-14 2006-03-15 株式会社神戸製鋼所 ダイヤモンド整流素子
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
JPH0794805A (ja) * 1993-05-14 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置
JPH0786311A (ja) * 1993-05-14 1995-03-31 Kobe Steel Ltd 高配向性ダイヤモンド薄膜電界効果トランジスタ
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
JP3549227B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド薄膜
US6087005A (en) * 1993-10-22 2000-07-11 The United States Of America As Represented By The Secretary Of The Navy Adhesion of silicon oxide to diamond
US5638251A (en) * 1995-10-03 1997-06-10 Advanced Refractory Technologies, Inc. Capacitive thin films using diamond-like nanocomposite materials
US6468642B1 (en) 1995-10-03 2002-10-22 N.V. Bekaert S.A. Fluorine-doped diamond-like coatings
US5795648A (en) * 1995-10-03 1998-08-18 Advanced Refractory Technologies, Inc. Method for preserving precision edges using diamond-like nanocomposite film coatings
US5961718A (en) * 1995-10-16 1999-10-05 National Science Council Process for selectively depositing diamond films
US6013980A (en) 1997-05-09 2000-01-11 Advanced Refractory Technologies, Inc. Electrically tunable low secondary electron emission diamond-like coatings and process for depositing coatings
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
US7045384B1 (en) * 2003-07-08 2006-05-16 Advanced Micro Devices, Inc. Method for determining metal work function by formation of Schottky diodes with shadow mask
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US9780366B2 (en) * 2013-08-29 2017-10-03 Stmicroelectronics (Tours) Sas Silicon microstructuring method and microbattery
AU2015248440C1 (en) 2014-04-14 2019-11-07 Ever Clean And Clear Technologies Ltd An ultrasound cleaning method with suspended nanoparticles
EP3802912A4 (fr) * 2018-05-25 2022-02-23 The Government of the United States of America, as represented by the Secretary of the Navy Diamant sur substrat à nanomotifs

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2030697A (en) * 1978-10-04 1980-04-10 Ici Ltd Detection of volatile material in liquid
NL8003365A (nl) * 1980-06-10 1982-01-04 Stamicarbon Werkwijze voor het zuiveren van 2-pyrrolidon.
US4544540A (en) * 1982-06-25 1985-10-01 Sumitomo Electric Industries, Ltd. Diamond single crystals, a process of manufacturing and tools for using same
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
CA1321121C (fr) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Methode de fabrication de semiconducteurs composites et dispositif a semiconducteur utilisant un semiconducteur composite fabrique selon cette methode
JPH0779958B2 (ja) * 1987-05-08 1995-08-30 住友電気工業株式会社 大型ダイヤモンドの合成方法
JP2731528B2 (ja) * 1987-12-28 1998-03-25 日本電気株式会社 直流電源瞬断検出装置
JPH01261298A (ja) * 1988-04-11 1989-10-18 Idemitsu Petrochem Co Ltd ダイヤモンド合成方法
JPH02184598A (ja) * 1989-01-10 1990-07-19 Kobe Steel Ltd 気相合成ダイヤモンド選択成膜方法

Also Published As

Publication number Publication date
JPH03278463A (ja) 1991-12-10
US5219769A (en) 1993-06-15
CA2030825C (fr) 1995-10-31

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed
MKEC Expiry (correction)

Effective date: 20121202