CA2021079A1 - Structure d'isolement pour transistors en couches minces de silicium amorphe - Google Patents

Structure d'isolement pour transistors en couches minces de silicium amorphe

Info

Publication number
CA2021079A1
CA2021079A1 CA002021079A CA2021079A CA2021079A1 CA 2021079 A1 CA2021079 A1 CA 2021079A1 CA 002021079 A CA002021079 A CA 002021079A CA 2021079 A CA2021079 A CA 2021079A CA 2021079 A1 CA2021079 A1 CA 2021079A1
Authority
CA
Canada
Prior art keywords
layer
silicon nitride
nitride layer
silicon
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002021079A
Other languages
English (en)
Inventor
George Edward Possin
Linda Mason Garverick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of CA2021079A1 publication Critical patent/CA2021079A1/fr
Abandoned legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
CA002021079A 1989-09-18 1990-07-12 Structure d'isolement pour transistors en couches minces de silicium amorphe Abandoned CA2021079A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40897989A 1989-09-18 1989-09-18
US408,979 1990-07-16

Publications (1)

Publication Number Publication Date
CA2021079A1 true CA2021079A1 (fr) 1991-03-19

Family

ID=23618550

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002021079A Abandoned CA2021079A1 (fr) 1989-09-18 1990-07-12 Structure d'isolement pour transistors en couches minces de silicium amorphe

Country Status (1)

Country Link
CA (1) CA2021079A1 (fr)

Similar Documents

Publication Publication Date Title
US5041888A (en) Insulator structure for amorphous silicon thin-film transistors
US5060036A (en) Thin film transistor of active matrix liquid crystal display
US5498573A (en) Method of making multi-layer address lines for amorphous silicon liquid crystal display devices
US5466617A (en) Manufacturing electronic devices comprising TFTs and MIMs
US4697331A (en) Method of fabrication of a control transistor for a flat-panel display screen
US5153754A (en) Multi-layer address lines for amorphous silicon liquid crystal display devices
US6236064B1 (en) Electro-optical device
US6262438B1 (en) Active matrix type display circuit and method of manufacturing the same
KR100710120B1 (ko) 액티브 매트릭스형 액정 표시 장치
US6180438B1 (en) Thin film transistors and electronic devices comprising such
CN100508200C (zh) 薄膜晶体管阵列基板及其制造方法
US5491571A (en) Liquid crystal display including electrodes and driver devices integrally formed in monocrystalline semiconductor layer
US5537234A (en) Relective liquid crystal display including driver devices integrally formed in monocrystalline semiconductor layer and method of fabricating the display
US5830785A (en) Direct multilevel thin-film transistors production method
US7133088B2 (en) Liquid crystal display device and method of fabricating the same
KR0124958B1 (ko) 액정용 박막트랜지스터 및 그 제조방법
JP3121005B2 (ja) 薄膜半導体装置とその製造方法及び製造装置並びに画像処理装置
JPH06167722A (ja) アクティブマトリクス基板及びその製造方法
KR20030085894A (ko) 박막트랜지스터 액정표시장치 및 그 제조방법
US6757033B2 (en) Liquid crystal display device and method for manufacturing the same
US4738513A (en) Liquid crystal display including a non-linear resistance element
JP2668317B2 (ja) アクティブマトリクスパネル
CA2021079A1 (fr) Structure d'isolement pour transistors en couches minces de silicium amorphe
US20050037528A1 (en) Thin film transistor liquid crystal display and fabrication method thereof
KR100219504B1 (ko) 이중 게이트 구조를 갖는 박막 트랜지스터-액정 표시장치 및 그 제조방법

Legal Events

Date Code Title Description
FZDE Dead