CA2002142A1 - Procede de prolongation de la duree de vie utile des cellules photovoltaiques - Google Patents
Procede de prolongation de la duree de vie utile des cellules photovoltaiquesInfo
- Publication number
- CA2002142A1 CA2002142A1 CA 2002142 CA2002142A CA2002142A1 CA 2002142 A1 CA2002142 A1 CA 2002142A1 CA 2002142 CA2002142 CA 2002142 CA 2002142 A CA2002142 A CA 2002142A CA 2002142 A1 CA2002142 A1 CA 2002142A1
- Authority
- CA
- Canada
- Prior art keywords
- copper indium
- layer
- metallic
- complex
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000001965 increasing effect Effects 0.000 title abstract description 10
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000011800 void material Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 150000004678 hydrides Chemical class 0.000 claims description 15
- 229910052719 titanium Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- -1 hydrogen ions Chemical class 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 claims description 2
- 229910000058 selane Inorganic materials 0.000 claims description 2
- 235000016768 molybdenum Nutrition 0.000 claims 6
- 239000002659 electrodeposit Substances 0.000 claims 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 2
- 150000004699 copper complex Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 28
- 238000007747 plating Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 7
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 5
- 150000002471 indium Chemical class 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 4
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 3
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011833 salt mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical class [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000002424 x-ray crystallography Methods 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31289489A | 1989-02-17 | 1989-02-17 | |
| US312,894 | 1989-02-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2002142A1 true CA2002142A1 (fr) | 1990-08-17 |
Family
ID=23213488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2002142 Abandoned CA2002142A1 (fr) | 1989-02-17 | 1989-11-02 | Procede de prolongation de la duree de vie utile des cellules photovoltaiques |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2002142A1 (fr) |
-
1989
- 1989-11-02 CA CA 2002142 patent/CA2002142A1/fr not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4345107A (en) | Cadmium telluride photovoltaic cells | |
| EP0021774B1 (fr) | Cellules photovoltaiques et procédé pour leur fabrication | |
| US7297868B2 (en) | Preparation of CIGS-based solar cells using a buffered electrodeposition bath | |
| US5871630A (en) | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells | |
| US5275714A (en) | Method of producing an absorber layer for solar cells with the aid of electrodeposition | |
| US5489372A (en) | Process for producing light absorption layer of solar cell | |
| Basol et al. | Mercury cadmium telluride solar cell with 10.6% efficiency | |
| JP3303975B2 (ja) | オーミックコンタクト及びオーミックコンタクトを有する光電池の製造方法 | |
| JP5038894B2 (ja) | 基板上に形成された黄銅鉱の吸収層上に硫化亜鉛バッファ層を化学浴析出により施与する黄銅鉱薄膜太陽電池の製造方法 | |
| TW200829725A (en) | Efficient gallium thin film electroplating methods and chemistries | |
| US20100140098A1 (en) | Selenium containing electrodeposition solution and methods | |
| US20130112564A1 (en) | Electroplating Solutions and Methods For Deposition of Group IIIA-VIA Films | |
| US20090188808A1 (en) | Indium electroplating baths for thin layer deposition | |
| Boudreau et al. | Influence of deposition rate on the character of electrodeposited CdSe used for photoelectrochemical cells | |
| US4253919A (en) | Electrodeposition of cadmium-selenium semiconducting photoelectrodes from an acid citrate bath | |
| US4261802A (en) | Method of making a photovoltaic cell | |
| CN102859046A (zh) | Ib/iiia/via族薄膜太阳能吸收器的镀覆化学物 | |
| Patel et al. | Preparation and characterization of Cu2SnS3 thin films by electrodeposition | |
| US4536260A (en) | Thin film cadmium selenide electrodeposited from selenosulphite solution | |
| JP2958448B2 (ja) | 化合物半導体の製造方法及び製造装置 | |
| US4256544A (en) | Method of making metal-chalcogenide photosensitive devices | |
| Morris et al. | Solar cells from thin films prepared by periodic pulse electrodeposition | |
| JP3097805B2 (ja) | 太陽電池とその製造方法並びにめっき方法 | |
| CA1167149A (fr) | Pile photovoltaique, et methode de fabrication connexe | |
| JPH0913190A (ja) | インジウムのメッキ方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Dead |