CA1301035C - Methode pour obtenir des semiconducteurs composities par croissance epitaxiale
- Google Patents
Methode pour obtenir des semiconducteurs composities par croissance epitaxiale
Info
Publication number
CA1301035C
CA1301035CCA000541726ACA541726ACA1301035CCA 1301035 CCA1301035 CCA 1301035CCA 000541726 ACA000541726 ACA 000541726ACA 541726 ACA541726 ACA 541726ACA 1301035 CCA1301035 CCA 1301035C
Authority
CA
Canada
Prior art keywords
substrate
compound semiconductor
accordance
semiconductor material
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verizon Laboratories Inc
Original Assignee
GTE Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/059,441external-prioritypatent/US4891091A/en
Application filed by GTE Laboratories IncfiledCriticalGTE Laboratories Inc
Application grantedgrantedCritical
Publication of CA1301035CpublicationCriticalpatent/CA1301035C/fr
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films