CA1298640C - Photodiodes a avalanche et methodes de fabrication de ces photodiodes - Google Patents
Photodiodes a avalanche et methodes de fabrication de ces photodiodesInfo
- Publication number
- CA1298640C CA1298640C CA000598773A CA598773A CA1298640C CA 1298640 C CA1298640 C CA 1298640C CA 000598773 A CA000598773 A CA 000598773A CA 598773 A CA598773 A CA 598773A CA 1298640 C CA1298640 C CA 1298640C
- Authority
- CA
- Canada
- Prior art keywords
- multiplication
- region
- layer
- sublayer
- per unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 91
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims description 46
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000013307 optical fiber Substances 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 58
- 239000000969 carrier Substances 0.000 description 15
- 230000005641 tunneling Effects 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000598773A CA1298640C (fr) | 1989-05-04 | 1989-05-04 | Photodiodes a avalanche et methodes de fabrication de ces photodiodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000598773A CA1298640C (fr) | 1989-05-04 | 1989-05-04 | Photodiodes a avalanche et methodes de fabrication de ces photodiodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1298640C true CA1298640C (fr) | 1992-04-07 |
Family
ID=4140014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000598773A Expired - Fee Related CA1298640C (fr) | 1989-05-04 | 1989-05-04 | Photodiodes a avalanche et methodes de fabrication de ces photodiodes |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1298640C (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014102353A2 (fr) * | 2012-12-31 | 2014-07-03 | Commissariat à l'énergie atomique et aux énergies alternatives | Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode |
| CN112018142A (zh) * | 2016-06-21 | 2020-12-01 | 深圳帧观德芯科技有限公司 | 基于雪崩光电二极管的图像感测器 |
-
1989
- 1989-05-04 CA CA000598773A patent/CA1298640C/fr not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014102353A2 (fr) * | 2012-12-31 | 2014-07-03 | Commissariat à l'énergie atomique et aux énergies alternatives | Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode |
| FR3000609A1 (fr) * | 2012-12-31 | 2014-07-04 | Commissariat Energie Atomique | Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode |
| WO2014102353A3 (fr) * | 2012-12-31 | 2014-10-09 | Commissariat à l'énergie atomique et aux énergies alternatives | Structure semiconductrice du type photodiode a avalanche a haut rapport signal sur bruit et procede de fabrication d'une telle photodiode |
| CN112018142A (zh) * | 2016-06-21 | 2020-12-01 | 深圳帧观德芯科技有限公司 | 基于雪崩光电二极管的图像感测器 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4992386A (en) | Method of manufacturing a semiconductor light detector | |
| EP0053513B1 (fr) | Photodiodes à avalanche | |
| EP1470575B1 (fr) | Photodiode à avalanche ayant une structure mesa | |
| US5843804A (en) | Method of making avalanche photodiodes with epitaxially-regrown guard rings | |
| US5157473A (en) | Avalanche photodiode having guard ring | |
| EP0869561B1 (fr) | Photodiode à avalanche et son procédé de fabrication | |
| KR900004180B1 (ko) | 반도체 광검지기 및 그 제조방법 | |
| US4794439A (en) | Rear entry photodiode with three contacts | |
| US5132747A (en) | Avalanche photo diode | |
| US20070057299A1 (en) | Systems and methods having a metal-semiconductor-metal (msm) photodetector with buried oxide layer | |
| EP0304048B1 (fr) | Photodiode planaire à avalanche à hétérojonction | |
| KR100303471B1 (ko) | 애벌란치형 광검출기 및 제작 방법 | |
| US6730979B2 (en) | Recessed p-type region cap layer avalanche photodiode | |
| CA1298640C (fr) | Photodiodes a avalanche et methodes de fabrication de ces photodiodes | |
| KR100509355B1 (ko) | 포토 다이오드의 구조 및 제조 방법 | |
| US6558973B2 (en) | Metamorphic long wavelength high-speed photodiode | |
| JPH0316275A (ja) | 半導体受光素子の製造方法 | |
| JPH05102517A (ja) | アバランシエフオトダイオードとその製造方法 | |
| US20030222275A1 (en) | Wavelength selective detector | |
| JP2645460B2 (ja) | 受光素子の製造方法 | |
| GB2240874A (en) | Photodiode | |
| JPS61101084A (ja) | 化合物半導体受光素子の製造方法 | |
| JP3055030B2 (ja) | アバランシェ・フォトダイオードの製造方法 | |
| KR100399050B1 (ko) | 초고속 통신용 애발란치 광 검출 소자 및 그 제조 방법 | |
| KR19990006160A (ko) | 애벌런치 포토 다이오드 및 그의 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |