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Koninklijke Philips NV
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Philips Gloeilampenfabrieken NV
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Priority to CA000492218ApriorityCriticalpatent/CA1271393A/fr
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Publication of CA1271393ApublicationCriticalpatent/CA1271393A/fr
CA000492218A1985-10-031985-10-03Methode de fabrication d'un monocristal a proprietes semi-isolantes d'arseniure de gallium et d'indium
ExpiredCA1271393A
(fr)
The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques
Process to obtain semi-insulating single crystalline epitaxial layers of arsenides and phosphides of metals of the group III of the periodic table useful to make electronic devices