CA1262486C - - Google Patents

Info

Publication number
CA1262486C
CA1262486C CA 521727 CA521727A CA1262486C CA 1262486 C CA1262486 C CA 1262486C CA 521727 CA521727 CA 521727 CA 521727 A CA521727 A CA 521727A CA 1262486 C CA1262486 C CA 1262486C
Authority
CA
Canada
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA 521727
Other versions
CA1252874A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to CA000569845A priority Critical patent/CA1262486A/en
Publication of CA1252874A publication Critical patent/CA1252874A/en
Application granted granted Critical
Publication of CA1262486C publication Critical patent/CA1262486C/xx
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
CA000521727A 1985-10-30 1986-10-29 FAILURE-INSENSITIVE THIN-FILM PHOTOVOLTAIC CELL Expired CA1252874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000569845A CA1262486A (en) 1985-10-30 1988-06-17 Fault tolerant thin-film photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/792,976 US4677250A (en) 1985-10-30 1985-10-30 Fault tolerant thin-film photovoltaic cell

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA000569845A Division CA1262486A (en) 1985-10-30 1988-06-17 Fault tolerant thin-film photovoltaic cell

Publications (2)

Publication Number Publication Date
CA1252874A CA1252874A (en) 1989-04-18
CA1262486C true CA1262486C (xx) 1989-10-24

Family

ID=25158689

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000521727A Expired CA1252874A (en) 1985-10-30 1986-10-29 FAILURE-INSENSITIVE THIN-FILM PHOTOVOLTAIC CELL

Country Status (5)

Country Link
US (1) US4677250A (xx)
EP (1) EP0221767A3 (xx)
JP (1) JPH0744288B2 (xx)
AU (1) AU6448886A (xx)
CA (1) CA1252874A (xx)

Families Citing this family (54)

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Publication number Priority date Publication date Assignee Title
JP2596547B2 (ja) * 1987-01-26 1997-04-02 キヤノン株式会社 太陽電池及びその製造方法
US5238879A (en) * 1988-03-24 1993-08-24 Siemens Aktiengesellschaft Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells
EP0334110B1 (de) * 1988-03-24 1993-09-15 Siemens Aktiengesellschaft Verfahren zum Herstellen von polykristallinen Schichten mit grobkristallinem Aufbau für Dünnschichthalbleiterbauelemente wie Solarzellen
US5057163A (en) * 1988-05-04 1991-10-15 Astropower, Inc. Deposited-silicon film solar cell
US5085711A (en) * 1989-02-20 1992-02-04 Sanyo Electric Co., Ltd. Photovoltaic device
US5098850A (en) * 1989-06-16 1992-03-24 Canon Kabushiki Kaisha Process for producing substrate for selective crystal growth, selective crystal growth process and process for producing solar battery by use of them
US5094697A (en) * 1989-06-16 1992-03-10 Canon Kabushiki Kaisha Photovoltaic device and method for producing the same
US5211761A (en) * 1990-06-29 1993-05-18 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method thereof
US5279678A (en) * 1992-01-13 1994-01-18 Photon Energy, Inc. Photovoltaic cell with thin CS layer
JP3322440B2 (ja) * 1993-06-24 2002-09-09 三洋電機株式会社 薄膜多結晶シリコンの製造方法
KR100414132B1 (ko) * 1998-07-02 2004-01-07 아스트로파워 다결정성 실리콘 박막, 다결정성 실리콘 박막 전자 디바이스, 집적 태양 전지, 태양전지 모듈 및 그 제조방법
US6587097B1 (en) 2000-11-28 2003-07-01 3M Innovative Properties Co. Display system
KR20030074824A (ko) * 2001-02-14 2003-09-19 도요다 고세이 가부시키가이샤 반도체 결정의 제조 방법 및 반도체 발광 소자
JP4015820B2 (ja) * 2001-04-11 2007-11-28 日本碍子株式会社 配線基板及びその製造方法
US7053294B2 (en) * 2001-07-13 2006-05-30 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
WO2003007386A1 (en) * 2001-07-13 2003-01-23 Midwest Research Institute Thin-film solar cell fabricated on a flexible metallic substrate
JP3760997B2 (ja) * 2003-05-21 2006-03-29 サンケン電気株式会社 半導体基体
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US7605328B2 (en) * 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US8846141B1 (en) 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US20070163639A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US7700464B2 (en) * 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US20070169809A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US7604843B1 (en) 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US8642455B2 (en) * 2004-02-19 2014-02-04 Matthew R. Robinson High-throughput printing of semiconductor precursor layer from nanoflake particles
US20070163641A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US7838868B2 (en) * 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
US20070079866A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. System and method for making an improved thin film solar cell interconnect
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
WO2008039461A2 (en) * 2006-09-27 2008-04-03 Thinsilicon Corp. Back contact device for photovoltaic cells and method of manufacturing a back contact
US20110041898A1 (en) * 2009-08-19 2011-02-24 Emcore Solar Power, Inc. Back Metal Layers in Inverted Metamorphic Multijunction Solar Cells
US20100093127A1 (en) * 2006-12-27 2010-04-15 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cell Mounted on Metallized Flexible Film
US7982127B2 (en) 2006-12-29 2011-07-19 Industrial Technology Research Institute Thin film solar cell module of see-through type
WO2008150769A2 (en) * 2007-05-31 2008-12-11 Thinsilicon Corporation Photovoltaic device and method of manufacturing photovoltaic devices
WO2010009436A2 (en) 2008-07-17 2010-01-21 Uriel Solar Inc. High power efficiency, large substrate, polycrystalline cdte thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US20100122764A1 (en) * 2008-11-14 2010-05-20 Emcore Solar Power, Inc. Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells
WO2010129163A2 (en) * 2009-05-06 2010-11-11 Thinsilicon Corporation Photovoltaic cells and methods to enhance light trapping in semiconductor layer stacks
US8247243B2 (en) * 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
EP2368276A4 (en) * 2009-06-10 2013-07-03 Thinsilicon Corp PV MODULE AND METHOD FOR MANUFACTURING A PV MODULE WITH MULTIPLE SEMICONDUCTOR LAYERING PLATES
US20110114156A1 (en) * 2009-06-10 2011-05-19 Thinsilicon Corporation Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode
WO2011044325A2 (en) * 2009-10-08 2011-04-14 Stewart Engineers, Inc. Methods of nucleation control in film deposition
US9447489B2 (en) 2011-06-21 2016-09-20 First Solar, Inc. Methods of making photovoltaic devices and photovoltaic devices
JP6993784B2 (ja) 2017-03-17 2022-01-14 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム

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US3914856A (en) * 1972-06-05 1975-10-28 Fang Pao Hsien Economical solar cell for producing electricity
US4052782A (en) * 1974-09-03 1977-10-11 Sensor Technology, Inc. Tubular solar cell and method of making same
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4197141A (en) * 1978-01-31 1980-04-08 Massachusetts Institute Of Technology Method for passivating imperfections in semiconductor materials
DE2850805C2 (de) * 1978-11-23 1986-08-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen
DE2850790A1 (de) * 1978-11-23 1980-06-12 Siemens Ag Verfahren zum herstellen von scheiben- oder bandfoermigen siliziumkristallen mit kolumnarstruktur fuer solarzellen
US4251286A (en) * 1979-09-18 1981-02-17 The University Of Delaware Thin film photovoltaic cells having blocking layers
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4392297A (en) * 1980-11-20 1983-07-12 Spire Corporation Process of making thin film high efficiency solar cells
US4366338A (en) * 1981-01-09 1982-12-28 Massachusetts Institute Of Technology Compensating semiconductor materials
US4434318A (en) * 1981-03-25 1984-02-28 Sera Solar Corporation Solar cells and method
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4482780A (en) * 1982-11-30 1984-11-13 The United States Of America As Represented By The United States Department Of Energy Solar cells with low cost substrates and process of making same
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
JPH0652795B2 (ja) * 1984-03-07 1994-07-06 太陽誘電株式会社 可撓性非晶質半導体太陽電池

Also Published As

Publication number Publication date
JPH0744288B2 (ja) 1995-05-15
CA1252874A (en) 1989-04-18
US4677250A (en) 1987-06-30
EP0221767A3 (en) 1989-04-12
JPS62113484A (ja) 1987-05-25
AU6448886A (en) 1987-05-07
EP0221767A2 (en) 1987-05-13

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