CA1248780A - Nickel-based electrical contact - Google Patents
Nickel-based electrical contactInfo
- Publication number
- CA1248780A CA1248780A CA000489652A CA489652A CA1248780A CA 1248780 A CA1248780 A CA 1248780A CA 000489652 A CA000489652 A CA 000489652A CA 489652 A CA489652 A CA 489652A CA 1248780 A CA1248780 A CA 1248780A
- Authority
- CA
- Canada
- Prior art keywords
- contact
- glass
- nickel
- contact material
- forming additive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Contacts (AREA)
- Conductive Materials (AREA)
Abstract
NICKEL-BASED ELECTRICAL CONTACT
Abstract Contacts comprising nickel and having a crystallographically disordered structure having electrical contact properties which render them suitable as replacements for gold contacts; disclosed contacts have low contact resistance even after prolonged exposure to an oxidizing ambient. Contacts comprising nickel and at least one glass-forming additive selected from boron, silicon, germanium, phosphorus, arsenic, antimony, or bismuth, are readily formed, e.g., as layers on substrates. A
crystallographically disordered structure is produced in a contact surface layer at least upon exposure to an oxidizing ambient; alternatively, such desired structure can be produced by ion bombardment and even in the absence of glass-forming additives.
Abstract Contacts comprising nickel and having a crystallographically disordered structure having electrical contact properties which render them suitable as replacements for gold contacts; disclosed contacts have low contact resistance even after prolonged exposure to an oxidizing ambient. Contacts comprising nickel and at least one glass-forming additive selected from boron, silicon, germanium, phosphorus, arsenic, antimony, or bismuth, are readily formed, e.g., as layers on substrates. A
crystallographically disordered structure is produced in a contact surface layer at least upon exposure to an oxidizing ambient; alternatively, such desired structure can be produced by ion bombardment and even in the absence of glass-forming additives.
Description
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NICKEL-BASED ELECTRIC~L CONTACT
Technical Field _____________.__ The invention is concerned with electrical contact surfaces and, more specifically, with nickel-based contact surface materials.
_ ckground of the Invention_ _ _______ _ _ ____ _ __ Typically, the manufacture of high-quality electrical contacts has involved the use of gold whose ~roperties o~ low contact resistance and high chemical stability are key advantages in such usage. However, as the price oE gold remains high, efforts continue at finding alternative materials for contact manuEacture.
Prominent among such alternatives are precious metals other than gold; e.g., silver-palladium alloys have been found suitable for certain applications. While such alternate alloys are less expensive than gold, still Eurther cost reduction is desired, and nonprecious metal alloys such as, eAg., copper-nickel alloys have also been investigated for contact resistance and stability over time. See S. ~. Garte et al., "Contact Properties of Nickel-Containing Alloys", Electrlcal_Con_acts, 1972, Illinois Institute of Technology.
Summary of the Invention ____ _____ _ It has been discovered that certain nickel alloys have contact properties of high stability and low contact resistance comparable to those of gold.
In accordance with an aspect of the invention there is provided apparatus comprising an electrical contact, said contact comprising a surface of a body of contact material, said contact material comprising nickel and at least one glass forming additive selected from the group consisting of boron, germanium, phosphorus, arsenic, antimony, and bismuth, said at least one glass ~orming additive bein~ present in said contact material in an amount in the range ~rom 2 to 10 atom percent of the combined amount of nickel and said at least one glass Eorming additive, said combined amount being greater than ~2~
or equal to 70 atom percent of said contact material, whereby at least a surface portion of said contact material is crystallographically disordered at least upon exposure to an oxidizing ambient.
The addi-tion of one or several glass-forming elements results in a crystallographically disordered structure at least upon exposure of the layer to an oxidizing ambient, this as contrasted with the formation of crystalline nickel oxide in the absence of preferred addition of a glass-forming element. Alternatively, crystallographically disordered structure can be produced by ion bombardment, alpha particles being conveniently used for this purpose.
Surface contact resistance less than 100 milliohms is typically maintained even after prolonged exposure to an oxidizing ambient.
Brief Descri~tion of the Drawin~
____________ _______________ _ _ FIG. 1 is a perspective view of an electrical connector device in accordance with the invention; and FIG. 2 is a schematic cross-sectional view of a portion of a device in accordance with the invention.
Detailed Descr~tion __.________ ____ The electrical connector device shown in ~IG. 1 comprises housing 11 and contact pins 1~. Housing 11 is made of an electrically insulating material, and contact pins 12 have contact surfaces in accordance with the invention.
Shown in FIG. 2 are, in cross section, an electrically conducting member 21 on which a surface layer ~2 is situated. In accordance with the invention surface layer 22 is made of an alloy of nickel and at least one glass-forming additional element. Upon e~posure to an oxidizing atmosphere, portion 23 of layer 22 further comprises oxygen.
Preferred glass-forming additive elements are boron, silicon, germanium, phosphorus, arsenic, antimonyr and bismuth, and their presence in the contact layer is in a preferred amount in the range of from 1 to 40 and preferably 2 to 10 atom percent relative to the combined .
878~
amount of nickel and the additive element; preEerred al.so in the range of from 25 to 35 a~om percent where thermodynamically stable, stoichiometric compounds are formed.
In combination, nickel and the ~lass-forming additive element or elements constitute a preferred amount of at least 70 atom percent of the contact layer material.
In the interest of enhanced electrically and mechanical contact properties, the addition of cobalt is desirable, elements other than cobalt preferably being limited to amounts less than S atom percent in combination and preferably less than 1 atom percent. Particularly undesirable is the presence of Group VI elements such as sulfur, selenium, and tellurium, and their combined amount is preferably limited to less than 0.5 atom percent.
. In the case of non-stoichiometric aggregates, glass-forming additives to nickel are considered to inhibit the formation of semiconducting nickel oxide in an oxidizing ambient. Instead of such semiconducting nickel oxide, in the presence of the glass-forming additive, a surface layer of an aggregation including nickel, oxygen~
and the glass-forming additive is believed to be formed in sufficiently large regions of the layer, such aggregation having essentially metallic conduction properties. Based on experimental evidence the thickness of the oxygen-containing surface layer is estimated to be on the order of
NICKEL-BASED ELECTRIC~L CONTACT
Technical Field _____________.__ The invention is concerned with electrical contact surfaces and, more specifically, with nickel-based contact surface materials.
_ ckground of the Invention_ _ _______ _ _ ____ _ __ Typically, the manufacture of high-quality electrical contacts has involved the use of gold whose ~roperties o~ low contact resistance and high chemical stability are key advantages in such usage. However, as the price oE gold remains high, efforts continue at finding alternative materials for contact manuEacture.
Prominent among such alternatives are precious metals other than gold; e.g., silver-palladium alloys have been found suitable for certain applications. While such alternate alloys are less expensive than gold, still Eurther cost reduction is desired, and nonprecious metal alloys such as, eAg., copper-nickel alloys have also been investigated for contact resistance and stability over time. See S. ~. Garte et al., "Contact Properties of Nickel-Containing Alloys", Electrlcal_Con_acts, 1972, Illinois Institute of Technology.
Summary of the Invention ____ _____ _ It has been discovered that certain nickel alloys have contact properties of high stability and low contact resistance comparable to those of gold.
In accordance with an aspect of the invention there is provided apparatus comprising an electrical contact, said contact comprising a surface of a body of contact material, said contact material comprising nickel and at least one glass forming additive selected from the group consisting of boron, germanium, phosphorus, arsenic, antimony, and bismuth, said at least one glass ~orming additive bein~ present in said contact material in an amount in the range ~rom 2 to 10 atom percent of the combined amount of nickel and said at least one glass Eorming additive, said combined amount being greater than ~2~
or equal to 70 atom percent of said contact material, whereby at least a surface portion of said contact material is crystallographically disordered at least upon exposure to an oxidizing ambient.
The addi-tion of one or several glass-forming elements results in a crystallographically disordered structure at least upon exposure of the layer to an oxidizing ambient, this as contrasted with the formation of crystalline nickel oxide in the absence of preferred addition of a glass-forming element. Alternatively, crystallographically disordered structure can be produced by ion bombardment, alpha particles being conveniently used for this purpose.
Surface contact resistance less than 100 milliohms is typically maintained even after prolonged exposure to an oxidizing ambient.
Brief Descri~tion of the Drawin~
____________ _______________ _ _ FIG. 1 is a perspective view of an electrical connector device in accordance with the invention; and FIG. 2 is a schematic cross-sectional view of a portion of a device in accordance with the invention.
Detailed Descr~tion __.________ ____ The electrical connector device shown in ~IG. 1 comprises housing 11 and contact pins 1~. Housing 11 is made of an electrically insulating material, and contact pins 12 have contact surfaces in accordance with the invention.
Shown in FIG. 2 are, in cross section, an electrically conducting member 21 on which a surface layer ~2 is situated. In accordance with the invention surface layer 22 is made of an alloy of nickel and at least one glass-forming additional element. Upon e~posure to an oxidizing atmosphere, portion 23 of layer 22 further comprises oxygen.
Preferred glass-forming additive elements are boron, silicon, germanium, phosphorus, arsenic, antimonyr and bismuth, and their presence in the contact layer is in a preferred amount in the range of from 1 to 40 and preferably 2 to 10 atom percent relative to the combined .
878~
amount of nickel and the additive element; preEerred al.so in the range of from 25 to 35 a~om percent where thermodynamically stable, stoichiometric compounds are formed.
In combination, nickel and the ~lass-forming additive element or elements constitute a preferred amount of at least 70 atom percent of the contact layer material.
In the interest of enhanced electrically and mechanical contact properties, the addition of cobalt is desirable, elements other than cobalt preferably being limited to amounts less than S atom percent in combination and preferably less than 1 atom percent. Particularly undesirable is the presence of Group VI elements such as sulfur, selenium, and tellurium, and their combined amount is preferably limited to less than 0.5 atom percent.
. In the case of non-stoichiometric aggregates, glass-forming additives to nickel are considered to inhibit the formation of semiconducting nickel oxide in an oxidizing ambient. Instead of such semiconducting nickel oxide, in the presence of the glass-forming additive, a surface layer of an aggregation including nickel, oxygen~
and the glass-forming additive is believed to be formed in sufficiently large regions of the layer, such aggregation having essentially metallic conduction properties. Based on experimental evidence the thickness of the oxygen-containing surface layer is estimated to be on the order of
2.5 nm.
Crystallographically disordered structure in nickel-containing layers is produced also upon ion bombardment which results in a crystallographically disordered structure even before exposure to an oxidizing ambient. Still, it is the disordered, quasi-amorphous, glass-like nature of an oxidized surface portion which is considered to be conducive to desired low contact resistance of a contact laver for use in an oxidizing ambient. A crystallographically disordered nickel aggregate preferably comprises nickel in an amount of at least 50 atom percent.
The following examples specifically illustrate the suitability of contacts in accordance with the invention.
Example 1. A layer consisting essentially of 95 atomic percent nickel and 5 atomic percent antimony was deposited by getter-sputtering approximately 3 micrometers thick on a copper substrate. Standard four-point probes were used to determine surface contact resistance; such resistance was found to be in the range of from 5 to 7 milliohms. The deposited film was then subjected to a test for stability at elevated temperature and humidity ~65 hours at a temperature of 75 degrees C, relative humidity of 95 percent), and contact resistance was then found to be in the range of from 15 to 20 milliohms.
Example 2. An experiment was carried out, analogous to Example 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent phosphorus. Contact resistance was 1.8 milliohm before the test and 4~4 to 5 milliohms after the test.
Example 3. An experiment was carried out, analogous to Example 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent boron. Contact resistance was in the range of from 2.9 to 3.5 milliohms before the test and in the range of from 10 to 14 milliohms after the test.
Example 4. An experimen~ was carried out, analogous to Example 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent silicon. Contact resistance was in the range of from 1.6 to 2.1 milliohms before the test and in the range of from 4.5 to 6 milliohms after the test.
Example 5. An experiment was carried out f analogous to ~xample 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent germanium. Con~act resistance was in the range oE from 1.5 to 1.85 milliohms before She test and 10 to 14 milliohms af~er the ~es~.
7~
Example 6. An aqueous solution was prepared containing 208 gm/1 NiC12.6H20, 49 gm/1 H3PO4 85 percent, and 5 gm/1 H3PO3. The solution was used to electroplate onto a copper electrode; plating bath temperature was 75 degrees C, current density was 150 mA/cm2, and plating rate was approximately 3 micrometers per minute. The deposited layer had a thickness of approximately 4,5 micrometers. Contact resistance of the deposited layer was less than 10 milliohms after exposure to the testing ambient.
Example 7. An aqueous solution of 0.087 molar of As2Os and 0.5 molar of NiCl2.6H2O was prepared~ A copper electrode was plated with nickel arsenide by pulse-plating from the solution at a temperature of 75 degrees C; current pulses of 200 mA/cm2 were on for 1.5 seconds and off for 0.5 seconds. Deposited layer thickness was approximately 4.5 micrometers. Contact resistance of the deposited layer was less than 10 milliohms after exposure to the testiny ambient.
Example 8. To a solution of 5 gm GeO2 in 50 c~ water plus 4 cc ammonium hydroxide and 0.5 molar of NiCl~.6H20, ~50 gm/l ammonium citrate were ~dded~ The solution was filtered, and ammonium hydroxide ~as added until pH was 8.5u A layer of nickel-germanium was plated 25 from the solution at a temperature of 75 degrees C onto a copper electrode; current density was 150 mA/cm2 and plating rate was approximately 2.5 micrometers per minute.
Deposited layer thickness was approximately 4.5 micrometers. Contact resistance of the deposited layer was less than 10 milliohms after exposure to the testing ambient.
Example 9~ A layer o nickel having a thickness of approximately 350 nm was deposited on a polished copper foil. A portion oE the nickel layer was covered wi~h an aluminum foil, and alpha-particles were implanted in the uncovered portion of the nick~l layer. Alpha-particles had an energy of approximately 1.8 MeV, and a dose of approximately 1.6x1016 particles per cm2 was found to be optimal or near-optimal for minimized contact resistance (less than 10 milliohms) after exposure to humid air at elevated temperature as described in Example 1 above. (This test is considered to be an approximate equivalent of exposure to ordinary atmospheric conditions for a duration of 5 years.) Also, visual inspection of the implanted portion after the test as compared with the portion which had been covered with aluminum foil, showed the latter to be dull and brownish while the former appeared bright and shiny.
Crystallographically disordered structure in nickel-containing layers is produced also upon ion bombardment which results in a crystallographically disordered structure even before exposure to an oxidizing ambient. Still, it is the disordered, quasi-amorphous, glass-like nature of an oxidized surface portion which is considered to be conducive to desired low contact resistance of a contact laver for use in an oxidizing ambient. A crystallographically disordered nickel aggregate preferably comprises nickel in an amount of at least 50 atom percent.
The following examples specifically illustrate the suitability of contacts in accordance with the invention.
Example 1. A layer consisting essentially of 95 atomic percent nickel and 5 atomic percent antimony was deposited by getter-sputtering approximately 3 micrometers thick on a copper substrate. Standard four-point probes were used to determine surface contact resistance; such resistance was found to be in the range of from 5 to 7 milliohms. The deposited film was then subjected to a test for stability at elevated temperature and humidity ~65 hours at a temperature of 75 degrees C, relative humidity of 95 percent), and contact resistance was then found to be in the range of from 15 to 20 milliohms.
Example 2. An experiment was carried out, analogous to Example 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent phosphorus. Contact resistance was 1.8 milliohm before the test and 4~4 to 5 milliohms after the test.
Example 3. An experiment was carried out, analogous to Example 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent boron. Contact resistance was in the range of from 2.9 to 3.5 milliohms before the test and in the range of from 10 to 14 milliohms after the test.
Example 4. An experimen~ was carried out, analogous to Example 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent silicon. Contact resistance was in the range of from 1.6 to 2.1 milliohms before the test and in the range of from 4.5 to 6 milliohms after the test.
Example 5. An experiment was carried out f analogous to ~xample 1, on a layer consisting essentially of 95 atomic percent nickel and 5 atomic percent germanium. Con~act resistance was in the range oE from 1.5 to 1.85 milliohms before She test and 10 to 14 milliohms af~er the ~es~.
7~
Example 6. An aqueous solution was prepared containing 208 gm/1 NiC12.6H20, 49 gm/1 H3PO4 85 percent, and 5 gm/1 H3PO3. The solution was used to electroplate onto a copper electrode; plating bath temperature was 75 degrees C, current density was 150 mA/cm2, and plating rate was approximately 3 micrometers per minute. The deposited layer had a thickness of approximately 4,5 micrometers. Contact resistance of the deposited layer was less than 10 milliohms after exposure to the testing ambient.
Example 7. An aqueous solution of 0.087 molar of As2Os and 0.5 molar of NiCl2.6H2O was prepared~ A copper electrode was plated with nickel arsenide by pulse-plating from the solution at a temperature of 75 degrees C; current pulses of 200 mA/cm2 were on for 1.5 seconds and off for 0.5 seconds. Deposited layer thickness was approximately 4.5 micrometers. Contact resistance of the deposited layer was less than 10 milliohms after exposure to the testiny ambient.
Example 8. To a solution of 5 gm GeO2 in 50 c~ water plus 4 cc ammonium hydroxide and 0.5 molar of NiCl~.6H20, ~50 gm/l ammonium citrate were ~dded~ The solution was filtered, and ammonium hydroxide ~as added until pH was 8.5u A layer of nickel-germanium was plated 25 from the solution at a temperature of 75 degrees C onto a copper electrode; current density was 150 mA/cm2 and plating rate was approximately 2.5 micrometers per minute.
Deposited layer thickness was approximately 4.5 micrometers. Contact resistance of the deposited layer was less than 10 milliohms after exposure to the testing ambient.
Example 9~ A layer o nickel having a thickness of approximately 350 nm was deposited on a polished copper foil. A portion oE the nickel layer was covered wi~h an aluminum foil, and alpha-particles were implanted in the uncovered portion of the nick~l layer. Alpha-particles had an energy of approximately 1.8 MeV, and a dose of approximately 1.6x1016 particles per cm2 was found to be optimal or near-optimal for minimized contact resistance (less than 10 milliohms) after exposure to humid air at elevated temperature as described in Example 1 above. (This test is considered to be an approximate equivalent of exposure to ordinary atmospheric conditions for a duration of 5 years.) Also, visual inspection of the implanted portion after the test as compared with the portion which had been covered with aluminum foil, showed the latter to be dull and brownish while the former appeared bright and shiny.
3~
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SUPPLEMENTARY DISCLOSURE
Contacts of the invention may receive a final coating or "Elash" comprising a significant amount of a coating material such as gold, one or several platinum-group elements, or gold and one or several platinum-group elements, the amount being sufficient to impart to the coated surface the appearance of such coating material.
The structure of such coating may be essentially homogeneous or layered, and coating thickness typically is in a range o~ from 0.01 to O.Oi micrometer. For example, a cobalt-hardened gold coating may be electro-deposited from a slightly acidic solution (pH 5) comprising potassium gold cyanide, cobalt citride, and a cltric buffer. (The presence of cobalt, nominally in a range of from 0.2 to 0.5 percent by weight, enhances surface hardness especially in the case of thicker coatings.) Preferred temperature of the plating bath is approximately 35 degrees C, and a plating current of approximately 5 milliamperes per cm2 is convenient. Typical plating times are of the order of half a minute Prior to plating, a surface may be cleaned, e.g., by electrolytic scrubbing in an alkaline solution, rinsing in de-ioni2ed water, and dipping in dilute hydrochloric acid at elevated temperature.
~z~l~7~
SUPPLEMENTARY DISCLOSURE
Contacts of the invention may receive a final coating or "Elash" comprising a significant amount of a coating material such as gold, one or several platinum-group elements, or gold and one or several platinum-group elements, the amount being sufficient to impart to the coated surface the appearance of such coating material.
The structure of such coating may be essentially homogeneous or layered, and coating thickness typically is in a range o~ from 0.01 to O.Oi micrometer. For example, a cobalt-hardened gold coating may be electro-deposited from a slightly acidic solution (pH 5) comprising potassium gold cyanide, cobalt citride, and a cltric buffer. (The presence of cobalt, nominally in a range of from 0.2 to 0.5 percent by weight, enhances surface hardness especially in the case of thicker coatings.) Preferred temperature of the plating bath is approximately 35 degrees C, and a plating current of approximately 5 milliamperes per cm2 is convenient. Typical plating times are of the order of half a minute Prior to plating, a surface may be cleaned, e.g., by electrolytic scrubbing in an alkaline solution, rinsing in de-ioni2ed water, and dipping in dilute hydrochloric acid at elevated temperature.
Claims (16)
1. Apparatus comprising an electrical contact, said contact comprising a surface of a body of contact material, said contact material comprising nickel and at least one glass forming additive selected from the group consisting of boron, germanium, phosphorus, arsenic, antimony, and bismuth, said at least one glass forming additive being present in said contact material in an amount in the range from 2 to 10 atom percent of the combined amount of nickel and said at least one glass forming additive, said combined amount being greater than or equal to 70 atom percent of said contact material, whereby at least a surface portion of said contact material is crystallographically disordered at least upon exposure to an oxidizing ambient.
2. Apparatus of claim 1, the presence of sulfur, selenium, and tellurium in combination being limited in said contact material to less than 0.5 atomic percent.
3. Apparatus of claim 1, said contact material further comprising cobalt.
4. Apparatus of claim 1, in which said at least one glass-forming additive is boron.
5. Apparatus of claim 1 in which said at least one glass-forming additive is germanium.
6. Apparatus of claim 1 in which said at least one glass-forming additive is phosphorus.
7. Apparatus of claim 1 in which said at least one glass-forming additive is arsenic.
8. Apparatus of claim 1 in which said at least one glass-forming additive is antimony.
9. Apparatus of claim 1 in which said at least one glass-forming additive is bismuth.
10. Apparatus of claim 1, said surface having a contact resistance which is less than 100 milliohms.
11. Apparatus of claim 1, said body of contact material being in the form of a layer deposited on a substrate.
12. Apparatus comprising an electrical contact, said contact comprising a surface of a body of contact material, said contact material comprising at least 50 atom percent nickel, and said contact material being crystallographically disordered by ion bombardment.
CLAIMS SUPPORTED BY SUPPLEMENTARY DISCLOSURE
CLAIMS SUPPORTED BY SUPPLEMENTARY DISCLOSURE
13. Apparatus of claim 1, said contact material having a surface coating which consists essentially of a coating material selected from the group consisting of gold, one or several platinum-group elements, and gold and one or several platinum-group elements.
14. Apparatus of claim 12, said contact material having a surface coating which consists essentially of a coating material selected from the group consisting of gold, one or several platinum-group elements, and gold and one or several platinum-group elements.
15. Apparatus of claim 13 or 14, the amount of said coating material being sufficient to produce a surface appearance of said coating material.
16. Apparatus of claim 13 or 14, said surface coating having a thickness in the range from 0.01 to 0.05 micrometer.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64670784A | 1984-08-31 | 1984-08-31 | |
| US646,707 | 1984-08-31 | ||
| US76140285A | 1985-08-01 | 1985-08-01 | |
| US761,402 | 1985-08-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1248780A true CA1248780A (en) | 1989-01-17 |
Family
ID=27094992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000489652A Expired CA1248780A (en) | 1984-08-31 | 1985-08-29 | Nickel-based electrical contact |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0192703B1 (en) |
| JP (1) | JPH08306256A (en) |
| KR (1) | KR930009233B1 (en) |
| CA (1) | CA1248780A (en) |
| DE (1) | DE3574075D1 (en) |
| ES (1) | ES8704042A1 (en) |
| WO (1) | WO1986001636A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6481130A (en) * | 1987-09-21 | 1989-03-27 | Omron Tateisi Electronics Co | Electrical contact |
| JPH0359972A (en) * | 1989-07-27 | 1991-03-14 | Yazaki Corp | Electrical contact |
| JP3467527B2 (en) * | 1992-12-17 | 2003-11-17 | 株式会社山王 | Contact material and method of manufacturing the same |
| FI113912B (en) * | 2001-12-13 | 2004-06-30 | Outokumpu Oy | Connector terminal with additive coating |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1769229A (en) * | 1925-05-19 | 1930-07-01 | Ambrose J Mandell | Electrode and contact element |
| US3017532A (en) * | 1956-02-27 | 1962-01-16 | Gen Am Transport | Electrical elements |
| US3856513A (en) * | 1972-12-26 | 1974-12-24 | Allied Chem | Novel amorphous metals and amorphous metal articles |
| NL7513557A (en) * | 1974-11-29 | 1976-06-01 | Allied Chem | PRECISION RESISTANCE. |
| JPS543010A (en) * | 1977-06-06 | 1979-01-11 | Ajinomoto Co Inc | Stabilization of glutamic acid-gamma-semialdehyde or delta1-pyrroline-5- carboxylic acid |
| JPS57132615A (en) * | 1981-02-10 | 1982-08-17 | Tokyo Shibaura Electric Co | Composite contact |
| IT1190842B (en) * | 1981-06-30 | 1988-02-24 | Erba Farmitalia | SUMMARY ROUTE OF OPTICALLY ACTIVE DERIVATIVES OF 2-PENEM-3-CARBOXYLIC ACID |
| JPS59229428A (en) * | 1984-04-27 | 1984-12-22 | Toshiba Corp | Production of two-stage hysteresis loop soft magnetic alloy |
| ATE40721T1 (en) * | 1984-05-11 | 1989-02-15 | Burlington Industries Inc | ELECTRICAL CONTACT COATED WITH AN AMORPHOUS TRANSITION ALLOY WHICH IS ITSELF COATED WITH A GOLD FILM. |
-
1985
- 1985-08-19 EP EP85904351A patent/EP0192703B1/en not_active Expired
- 1985-08-19 KR KR1019860700178A patent/KR930009233B1/en not_active IP Right Cessation
- 1985-08-19 DE DE8585904351T patent/DE3574075D1/en not_active Expired
- 1985-08-19 WO PCT/US1985/001587 patent/WO1986001636A1/en active IP Right Grant
- 1985-08-27 ES ES546448A patent/ES8704042A1/en not_active Expired
- 1985-08-29 CA CA000489652A patent/CA1248780A/en not_active Expired
-
1995
- 1995-09-07 JP JP7230265A patent/JPH08306256A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0192703A1 (en) | 1986-09-03 |
| DE3574075D1 (en) | 1989-12-07 |
| JPH08306256A (en) | 1996-11-22 |
| WO1986001636A1 (en) | 1986-03-13 |
| ES546448A0 (en) | 1987-03-01 |
| EP0192703B1 (en) | 1989-11-02 |
| ES8704042A1 (en) | 1987-03-01 |
| KR860700310A (en) | 1986-08-01 |
| KR930009233B1 (en) | 1993-09-24 |
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