CA1167573A - Device for epitaxial depositing layers from a liquid phase - Google Patents

Device for epitaxial depositing layers from a liquid phase

Info

Publication number
CA1167573A
CA1167573A CA000386793A CA386793A CA1167573A CA 1167573 A CA1167573 A CA 1167573A CA 000386793 A CA000386793 A CA 000386793A CA 386793 A CA386793 A CA 386793A CA 1167573 A CA1167573 A CA 1167573A
Authority
CA
Canada
Prior art keywords
tongues
unit
sliding
depositing
recesses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000386793A
Other languages
English (en)
French (fr)
Inventor
Jochen Heinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA1167573A publication Critical patent/CA1167573A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000386793A 1980-09-29 1981-09-28 Device for epitaxial depositing layers from a liquid phase Expired CA1167573A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3036643.9 1980-09-29
DE3036643A DE3036643C2 (de) 1980-09-29 1980-09-29 Vorrichtung zur Flüssigphasen-Epitaxie

Publications (1)

Publication Number Publication Date
CA1167573A true CA1167573A (en) 1984-05-15

Family

ID=6113095

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000386793A Expired CA1167573A (en) 1980-09-29 1981-09-28 Device for epitaxial depositing layers from a liquid phase

Country Status (5)

Country Link
US (1) US4406245A (enExample)
EP (1) EP0048872B1 (enExample)
JP (1) JPS5788093A (enExample)
CA (1) CA1167573A (enExample)
DE (1) DE3036643C2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4519871A (en) * 1983-11-25 1985-05-28 Cook Melvin S Bubble-mode liquid phase epitaxy
US4774904A (en) * 1986-09-29 1988-10-04 Jamie Knapp Multiple-layer growth of plural semiconductor devices
JPS6436017U (enExample) * 1987-08-27 1989-03-06
US20100102419A1 (en) * 2008-10-28 2010-04-29 Eric Ting-Shan Pan Epitaxy-Level Packaging (ELP) System
US8193078B2 (en) 2008-10-28 2012-06-05 Athenaeum, Llc Method of integrating epitaxial film onto assembly substrate
US7905197B2 (en) 2008-10-28 2011-03-15 Athenaeum, Llc Apparatus for making epitaxial film

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3990392A (en) * 1968-12-31 1976-11-09 U.S. Philips Corporation Epitaxial growth apparatus
FR1600341A (enExample) * 1968-12-31 1970-07-20
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
USRE28140E (en) 1971-11-29 1974-08-27 Bergh ctal
JPS5213510B2 (enExample) * 1973-02-26 1977-04-14
US3853643A (en) * 1973-06-18 1974-12-10 Bell Telephone Labor Inc Epitaxial growth of group iii-v semiconductors from solution
DE2337238A1 (de) * 1973-07-21 1975-01-30 Licentia Gmbh Verfahren und vorrichtung zur epitaktischen ablagerung kristallisierter schichten auf einem einkristallinen substrat aus einem material in fluessigem zustand
DD115580A1 (enExample) * 1974-10-15 1975-10-12
DE2730358C3 (de) * 1977-07-05 1982-03-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum aufeinanderfolgenden Abscheiden einkristalliner Schichten auf einem Substrat nach der Flüssigphasen-Schiebeepitaxie
JPS5556625A (en) 1978-10-20 1980-04-25 Matsushita Electric Ind Co Ltd Semiconductor crystal growing device
US4214550A (en) * 1979-05-21 1980-07-29 Rca Corporation Apparatus for the deposition of a material from a liquid phase

Also Published As

Publication number Publication date
US4406245A (en) 1983-09-27
DE3036643C2 (de) 1984-09-20
EP0048872B1 (de) 1985-08-07
JPS5788093A (en) 1982-06-01
JPS614797B2 (enExample) 1986-02-13
DE3036643A1 (de) 1982-04-08
EP0048872A1 (de) 1982-04-07

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