CA1159579A - Method for automatic mask alignment - Google Patents
Method for automatic mask alignmentInfo
- Publication number
- CA1159579A CA1159579A CA000416531A CA416531A CA1159579A CA 1159579 A CA1159579 A CA 1159579A CA 000416531 A CA000416531 A CA 000416531A CA 416531 A CA416531 A CA 416531A CA 1159579 A CA1159579 A CA 1159579A
- Authority
- CA
- Canada
- Prior art keywords
- target
- mask
- wafer
- alignment
- lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
METHOD FOR AUTOMATIC MASK ALIGNMENT
ABSTRACT
A method for aligning a mask with a microcircuit wafer, using a first target which is of a size that can be printed on a microcircuit chip without interfering with the lines thereon, and consisting only of lines vertically or diagonally disposed with respect to the image transducer.
This target is exposed on at least two positions of the wafer, and the microcircuit is processed to include the first targets. A second mask to be exposed after the first mask has a diamond shaped target of a second size on at least two positions, and the first and second targets are centered one within the other prior to exposing the second mask.
ABSTRACT
A method for aligning a mask with a microcircuit wafer, using a first target which is of a size that can be printed on a microcircuit chip without interfering with the lines thereon, and consisting only of lines vertically or diagonally disposed with respect to the image transducer.
This target is exposed on at least two positions of the wafer, and the microcircuit is processed to include the first targets. A second mask to be exposed after the first mask has a diamond shaped target of a second size on at least two positions, and the first and second targets are centered one within the other prior to exposing the second mask.
Description
5'7 ~
BACKGR~U~D OF THE INVENTION
This invention relates to the processing of microcircuits in general and more particularly to an automatic mask alignment system for use in apparatus in which an image on a mask is projected on to a substrate coated with a resist in order to expose the resist for further processing of the substrate.
In the making of micro-circuits the general process followed is that of generating an oxide film on the semi-conductor substrate; coating the oxide film with a photoxesist and then illuminating the photoresist through a mask to expose selected portions of the resist. After exposure, the pho~o-resist is developed creating a pattern corresponding to either the exposed or unexposed portions depending on the type of photoresist. The remaining photoresist forms a protective cover for the oxide layer which is then etched, for example, in hydrofluoric acid, to expose the layer below the oxide film, whereupon impurities can be infused into the substrate for doping purposes to form transistors and the like. Once this is done, the process may be repeated numerous times with additional oxide films formed, more resist deposited, the resist exposed, develop~d, and the oxide film etched with further steps of doping or depositing carried out.
The exposure of the photoresist is carried out by using masks which are prepared for that purpose. Separate masks are used for each of the successive steps. If everything is to appear in the proper place on the micro-circuit a high degree of alignment is necessary between steps.
Typically, the substrate which is exposed, is in the form of a wafer which will contain thereon a plurality of identical chips or micro-circuits. The mask, similarly will contain 3 3~5~
numerous identical patterns, one for each of the chips. The mask is made by taking the pattern to be imaged on each one of the micro-circuits and forming it numerous times following a step and repeat process. ~hus, the same pattern is found across the rows and columns of the mask.
One system which is used in carrying out exposure of wafers in this manner is disclosed in detail in U.S. Patents 4,011,011 issued March 8, 1977 to Offner, et al.; 4,006,645 issued February 8, 1~77 to Newell; for example. The system disclosed therein is one which utilizes manual alignment, with the operator viewing the mask and wafer through an op-tical system. The system includes a fine alignment system and coarse alignment system along with the projection system.
The actual element for alignment is carried out by the de-vice disclosed in U.S. Patent 4,006,645.
Proper alignment requires the ability to align at least two targets, one on each side of a wafer. This is accomp-lished with the viewing system of the type illustrated on figure 4 of U.S. Patent 4,011,011 in which the viewing field contains two images derived from the wafer and mask. This then requires that alignment targets be printed on the mask for this purpose.
The first mask imaged on the wafer does not require alignment since there is no previous pattern on which to align. For subsequent automati~ alignment, it is necessary to print targets on at least two sites on the wafer. After processing is carried out, these targets are present and then are used in the next processing step to accurately align the wafer with the next masks. When aliynment is done manually, the nature of the targets is not particularly critical; how~
ever, if this alignment is to be carried out automatically, certain problems arise. In automatic alignment, it has gen-erally been the practice to make large targets, i.e., targets which take up ~ ~5~357~
the space of two or more micro-circuits. This requires that during the step-and-repeat process of making the mask, the microcircuit pattern be interrupted in at least two places so as to include the large alignment target patterns. Since the relative position of the circuit and alignment patterns can change from one mask to another, alignment of the alignment patterns can lead to misalignment of the circuit patterns.
Furthermore, at least two spaces which would normally yield microcircuits are lost to the target.
Thus the need for an improved automatic alignment system which avoids these difficulties becomes evident.
SUMMARY OF THE INVENTION
The present invention provides a solution to this pro-blem. In its hroadest aspect, the present invention comprises utilizing a small target, i.e., a target of such a size that it can be printed on a single micro-circuit chip itself with-out interfering with the normal lines thereon. In order that the target can be reliably detected, the target consists only of diagonal lines at 45 to the chip edges. Since the lines made on the micro-circuit for processing purposes are normally horizontal and vertical, the target is thus distinguishable from the normal micro-circuit photography. In its simplest form, the target is a diamond. Alignment is carried out by initially exposing a first diamond on the microcircuit and centering it in relation to a second diamond contained on the new mask, the diamonds being of different sizes so that they can be centered one within the other. It is sometimes pre-ferred that the new wafer targets be printed each time there is an exposure. This will avoid the loss of resolution which can occur as additional layers of silicon oxide are formed over the targets and will also prevent confusion caused by the mask target exposed after the previous alignment. Furthermore, 9 5 ~ ~
although the target may be a solid or fllled-ln diamond, a hollow target is preferable. Furthermore, it is preferred that the diamond not be complete but that each of the diamonds forming the mask target and the wafer target have missing sec-tions in order to permit easier identification. Through the use o~ such a target, various detection sche~.es are possible.
Although it is only necessary that the targets be present on two sites of the wafer, it is preferred, in order not to have changed images in the step and repeat camera, that the target be printed on each chip. The target being there does no harm even if it is not used. Alternatively, the tar-gets, rather than being somewhere inside the chip, can be in the sections of the wafer between chips. Normally these areas are masked out but it is no problem to include the targets -therein. Such is possible only by using the small target of the present invention.
In broad terms, the system for detecting the presence of targets includes a TV camera using a very sensitive vidicon, a circuit which detects the presence of a target line in the video signal, a digitizer which digitizes those locations, i.e., digitizes the x and y locations thereof, and includes a memory buffer, and a micro-computer system which receives the digitized data and from this data locates diagonal lines, determines the end points of the diagonal lines, reconstructs the diamond and therefrom determines alignment. If alignment is not within preset tolerances, the micro-computer system provides outputs to the alignment motor drive, the alignment drive being as described in the aforementioned U.S. Patent 4,006,645.
Also disclosed is a digital preprocessor to aid in filtering out data which is not associated with diagonal lines.
5'7 ~
BRIE~ DESCRIP~XON OF THÆ DRAWINGS
FIG 1 is a view comparing the large scale target of the pri~r art with ~he small scale target of the present invention.
FIG. 2 is a view of a first embodiment of the ali~nment target of the present invention.
FIG. 3 is a view of a second embodiment of a patterm ; according to the present invention.
- FIG. 4 is a view of a hollow pattern accoraing to the present ` invention.
-10 FIG. ~ i~ a basic block diagram of a system for detecting the patterns of FIGS. 2 and 3.
FIG. 6 is a diagram illustrating the principle of position detecting used in the present invention.
FIGo 7 is a diagram of a circuit for detec ing line position.
FIG. 8 is a block diagram of a preprocessor unit using digital shift registers.
FIG. 9 is a schematic diagram of a digital correlator for target lines having a 1.~:1 vertical to horizontal digitization `t ratio.
FIG. 10 is a schematic diagram of a digitizer and memory - -buffer.
DETAILED DESCRIPTION OF THE INVENTION
As pre~iously indicated, the essential feature of the present invention lies in the use of a small target and in th~ use of a target which is diamond shaped. ~his is best illustrated by FIG. 1 which is a comparison of the small and large target approaches. A wafer 11 is shown broken down into a plurality o~ squares, each square representing a micro-circuit. As indicated previously, there is a need for a target on at least two sites on the wa~er. ~nus, there are shown conventional target arrays 13-on each side of the wafer 11. The target array 13 OD the left hand side o~ the wafer is shown in an ~-2399 1 ~95 ~
enlarged presentatiOn. ~te that the target array 13 consists o f a rectangular ~lock containing three sep~rate targets 15 and that each array displaces one integrated circuit on the wafer.
In accordance with the present i~vention, however, small targets are used. Such a small target is shown within the er.larged view of the circuit 17. Note that a much smaller area of the wafer 11 is circled and includes parts of four micro-circuits.
Visible on the micro-circuitsare typical bonding pads 19 which are typically 5 mils square. Shown is an unused alignment target 21 and an alignment target 23 which has been previously used.
Note that the alignment targets are printèd on each of the sections or micro-circuits 25 on the wafer. Thus they are between other components on the wafer and do not require the displacement of a pair of integrated circuits therefore resulting in a greater yield.
FIG. 2 illustrates a first embodiment of the alignment pattern of the present invention. Each time a pattern for processing is printed on the wafer for each microcircuit, an alignment pattern 27 is also printed. On the next succeediny mask, an alignment pattern 28 is provided of the same diamond shape and in the corresponding position as the pattern 27, but of smaller size. When the two are aligned, they-take the relative position shown by the overall diayram 30. The mask may, of course, in addition to containing a smaller pattern 28, contai~ somewhere else one or moxe copies of pattern 31 which will be available for the next steps in the process~
Although the closed diamonds of FIG. 2 may be used, it is preferred that the patterns shown on FIG. 3 be used~
In these patterns~ the diamond 27 is replaced by a pattern which has a diamond outline but in which the corners are cut away. Thus, on each of the sides of the diamond there only ~ ~9~ 7~ 0-2300 remains a segment 31. Similarly, with the small diamond only the segments ~3 rem~in so that the resulting pattern 34 is an shown on the ~igure when alignment ta~es place. The dimensions of the targets 31 and 33 can be varied to suit the resolution of the imaging ~ystem and the field of the viewing system and might typically be as given on FIG 3. Furthermore, although the pattern shown on FIGS. 2 and 3 are hollow patterns which have certain ad~antages, it is possible to use solid patterns.
FIG. 4 illustrates both target types.
As noted, it is through the use of such patterns that automatic alignment is posslble and thus, in its broaaest aspects the presen~ invention comprises the use of such patterns for alignment. However, another aspect of the invention is the manner in which these patterns are used to carry out automatic alignment. This will now be explained.
FIG. 5 shows the basic block diagram of the system of the present invention. In conventional fashion the wafer ; is disposed on a stage 41. Though the optical system of the aforementioned patent, the wafer 41 and mask 43 can both be observed. A television camera is installed to view two portions of the mask and wafer through a split field optical system using dark field illumination. Viewing the targets under dark field illumination results in edges providing consistent bright Images on a dark background due to the topography inherent in IC fabrication. This type of illumination also allows for efficient use of a technique known as video integration to increase the video signal to noise ratio. Video integration is implemented by blanking the electron readout ~eam in the vidicon image tube for a desired number of frames allowing the ~V
~30 image in the form of a photocathode charge or conductivity difference to build up with time resulting in an increased ~ideo signal when the ~idicon target is first allowed to be sampled.
3 5'~ '~
.
Initial mechanical p~sitioning is carried out by the wafer loading mechanism to bring the mask and wafer into general alignment. The television camera scans over the portions of the mask and wafer in the viewing field and provides its video - output to a line position detector 47 during one frame. Th~
detector, in a manner to be more fully described below, detects the presence of the lines on the alignment patterns. Upon detection, these positions are digitized and temporarily stoxed in a memory buffer 49 and ~hen in a microcomputer memory. The digitized information is then available to a microcomputer 51 in which computations are carried out in order to determine whether or not the mask pattern is aligned , with the wafer pattern. Depending on the degree of misalignment, outputs are provided to an alignment motor drive 53 which drives the wafer stage, in the manner described in the afore-mentioned U.S. Patent 4,006,645.
The line position 47 detector, as the television camera scans horizontally will detect not only diagonal edges of the pattern but will tend to also detect any vertical lines.
The principle on which it operates is illustrated by FIG. 6.
The video signal 55 from a typical hollow target line 56 illuminated by dark field illumination has a characteristic voltage versus time wave shape 59 as shown in FIG. 6 as VI.
Detection is carried out as follows:
1. A second signal V2 i5 derived fro~ Vl by delaying it for a time ~ T.
BACKGR~U~D OF THE INVENTION
This invention relates to the processing of microcircuits in general and more particularly to an automatic mask alignment system for use in apparatus in which an image on a mask is projected on to a substrate coated with a resist in order to expose the resist for further processing of the substrate.
In the making of micro-circuits the general process followed is that of generating an oxide film on the semi-conductor substrate; coating the oxide film with a photoxesist and then illuminating the photoresist through a mask to expose selected portions of the resist. After exposure, the pho~o-resist is developed creating a pattern corresponding to either the exposed or unexposed portions depending on the type of photoresist. The remaining photoresist forms a protective cover for the oxide layer which is then etched, for example, in hydrofluoric acid, to expose the layer below the oxide film, whereupon impurities can be infused into the substrate for doping purposes to form transistors and the like. Once this is done, the process may be repeated numerous times with additional oxide films formed, more resist deposited, the resist exposed, develop~d, and the oxide film etched with further steps of doping or depositing carried out.
The exposure of the photoresist is carried out by using masks which are prepared for that purpose. Separate masks are used for each of the successive steps. If everything is to appear in the proper place on the micro-circuit a high degree of alignment is necessary between steps.
Typically, the substrate which is exposed, is in the form of a wafer which will contain thereon a plurality of identical chips or micro-circuits. The mask, similarly will contain 3 3~5~
numerous identical patterns, one for each of the chips. The mask is made by taking the pattern to be imaged on each one of the micro-circuits and forming it numerous times following a step and repeat process. ~hus, the same pattern is found across the rows and columns of the mask.
One system which is used in carrying out exposure of wafers in this manner is disclosed in detail in U.S. Patents 4,011,011 issued March 8, 1977 to Offner, et al.; 4,006,645 issued February 8, 1~77 to Newell; for example. The system disclosed therein is one which utilizes manual alignment, with the operator viewing the mask and wafer through an op-tical system. The system includes a fine alignment system and coarse alignment system along with the projection system.
The actual element for alignment is carried out by the de-vice disclosed in U.S. Patent 4,006,645.
Proper alignment requires the ability to align at least two targets, one on each side of a wafer. This is accomp-lished with the viewing system of the type illustrated on figure 4 of U.S. Patent 4,011,011 in which the viewing field contains two images derived from the wafer and mask. This then requires that alignment targets be printed on the mask for this purpose.
The first mask imaged on the wafer does not require alignment since there is no previous pattern on which to align. For subsequent automati~ alignment, it is necessary to print targets on at least two sites on the wafer. After processing is carried out, these targets are present and then are used in the next processing step to accurately align the wafer with the next masks. When aliynment is done manually, the nature of the targets is not particularly critical; how~
ever, if this alignment is to be carried out automatically, certain problems arise. In automatic alignment, it has gen-erally been the practice to make large targets, i.e., targets which take up ~ ~5~357~
the space of two or more micro-circuits. This requires that during the step-and-repeat process of making the mask, the microcircuit pattern be interrupted in at least two places so as to include the large alignment target patterns. Since the relative position of the circuit and alignment patterns can change from one mask to another, alignment of the alignment patterns can lead to misalignment of the circuit patterns.
Furthermore, at least two spaces which would normally yield microcircuits are lost to the target.
Thus the need for an improved automatic alignment system which avoids these difficulties becomes evident.
SUMMARY OF THE INVENTION
The present invention provides a solution to this pro-blem. In its hroadest aspect, the present invention comprises utilizing a small target, i.e., a target of such a size that it can be printed on a single micro-circuit chip itself with-out interfering with the normal lines thereon. In order that the target can be reliably detected, the target consists only of diagonal lines at 45 to the chip edges. Since the lines made on the micro-circuit for processing purposes are normally horizontal and vertical, the target is thus distinguishable from the normal micro-circuit photography. In its simplest form, the target is a diamond. Alignment is carried out by initially exposing a first diamond on the microcircuit and centering it in relation to a second diamond contained on the new mask, the diamonds being of different sizes so that they can be centered one within the other. It is sometimes pre-ferred that the new wafer targets be printed each time there is an exposure. This will avoid the loss of resolution which can occur as additional layers of silicon oxide are formed over the targets and will also prevent confusion caused by the mask target exposed after the previous alignment. Furthermore, 9 5 ~ ~
although the target may be a solid or fllled-ln diamond, a hollow target is preferable. Furthermore, it is preferred that the diamond not be complete but that each of the diamonds forming the mask target and the wafer target have missing sec-tions in order to permit easier identification. Through the use o~ such a target, various detection sche~.es are possible.
Although it is only necessary that the targets be present on two sites of the wafer, it is preferred, in order not to have changed images in the step and repeat camera, that the target be printed on each chip. The target being there does no harm even if it is not used. Alternatively, the tar-gets, rather than being somewhere inside the chip, can be in the sections of the wafer between chips. Normally these areas are masked out but it is no problem to include the targets -therein. Such is possible only by using the small target of the present invention.
In broad terms, the system for detecting the presence of targets includes a TV camera using a very sensitive vidicon, a circuit which detects the presence of a target line in the video signal, a digitizer which digitizes those locations, i.e., digitizes the x and y locations thereof, and includes a memory buffer, and a micro-computer system which receives the digitized data and from this data locates diagonal lines, determines the end points of the diagonal lines, reconstructs the diamond and therefrom determines alignment. If alignment is not within preset tolerances, the micro-computer system provides outputs to the alignment motor drive, the alignment drive being as described in the aforementioned U.S. Patent 4,006,645.
Also disclosed is a digital preprocessor to aid in filtering out data which is not associated with diagonal lines.
5'7 ~
BRIE~ DESCRIP~XON OF THÆ DRAWINGS
FIG 1 is a view comparing the large scale target of the pri~r art with ~he small scale target of the present invention.
FIG. 2 is a view of a first embodiment of the ali~nment target of the present invention.
FIG. 3 is a view of a second embodiment of a patterm ; according to the present invention.
- FIG. 4 is a view of a hollow pattern accoraing to the present ` invention.
-10 FIG. ~ i~ a basic block diagram of a system for detecting the patterns of FIGS. 2 and 3.
FIG. 6 is a diagram illustrating the principle of position detecting used in the present invention.
FIGo 7 is a diagram of a circuit for detec ing line position.
FIG. 8 is a block diagram of a preprocessor unit using digital shift registers.
FIG. 9 is a schematic diagram of a digital correlator for target lines having a 1.~:1 vertical to horizontal digitization `t ratio.
FIG. 10 is a schematic diagram of a digitizer and memory - -buffer.
DETAILED DESCRIPTION OF THE INVENTION
As pre~iously indicated, the essential feature of the present invention lies in the use of a small target and in th~ use of a target which is diamond shaped. ~his is best illustrated by FIG. 1 which is a comparison of the small and large target approaches. A wafer 11 is shown broken down into a plurality o~ squares, each square representing a micro-circuit. As indicated previously, there is a need for a target on at least two sites on the wa~er. ~nus, there are shown conventional target arrays 13-on each side of the wafer 11. The target array 13 OD the left hand side o~ the wafer is shown in an ~-2399 1 ~95 ~
enlarged presentatiOn. ~te that the target array 13 consists o f a rectangular ~lock containing three sep~rate targets 15 and that each array displaces one integrated circuit on the wafer.
In accordance with the present i~vention, however, small targets are used. Such a small target is shown within the er.larged view of the circuit 17. Note that a much smaller area of the wafer 11 is circled and includes parts of four micro-circuits.
Visible on the micro-circuitsare typical bonding pads 19 which are typically 5 mils square. Shown is an unused alignment target 21 and an alignment target 23 which has been previously used.
Note that the alignment targets are printèd on each of the sections or micro-circuits 25 on the wafer. Thus they are between other components on the wafer and do not require the displacement of a pair of integrated circuits therefore resulting in a greater yield.
FIG. 2 illustrates a first embodiment of the alignment pattern of the present invention. Each time a pattern for processing is printed on the wafer for each microcircuit, an alignment pattern 27 is also printed. On the next succeediny mask, an alignment pattern 28 is provided of the same diamond shape and in the corresponding position as the pattern 27, but of smaller size. When the two are aligned, they-take the relative position shown by the overall diayram 30. The mask may, of course, in addition to containing a smaller pattern 28, contai~ somewhere else one or moxe copies of pattern 31 which will be available for the next steps in the process~
Although the closed diamonds of FIG. 2 may be used, it is preferred that the patterns shown on FIG. 3 be used~
In these patterns~ the diamond 27 is replaced by a pattern which has a diamond outline but in which the corners are cut away. Thus, on each of the sides of the diamond there only ~ ~9~ 7~ 0-2300 remains a segment 31. Similarly, with the small diamond only the segments ~3 rem~in so that the resulting pattern 34 is an shown on the ~igure when alignment ta~es place. The dimensions of the targets 31 and 33 can be varied to suit the resolution of the imaging ~ystem and the field of the viewing system and might typically be as given on FIG 3. Furthermore, although the pattern shown on FIGS. 2 and 3 are hollow patterns which have certain ad~antages, it is possible to use solid patterns.
FIG. 4 illustrates both target types.
As noted, it is through the use of such patterns that automatic alignment is posslble and thus, in its broaaest aspects the presen~ invention comprises the use of such patterns for alignment. However, another aspect of the invention is the manner in which these patterns are used to carry out automatic alignment. This will now be explained.
FIG. 5 shows the basic block diagram of the system of the present invention. In conventional fashion the wafer ; is disposed on a stage 41. Though the optical system of the aforementioned patent, the wafer 41 and mask 43 can both be observed. A television camera is installed to view two portions of the mask and wafer through a split field optical system using dark field illumination. Viewing the targets under dark field illumination results in edges providing consistent bright Images on a dark background due to the topography inherent in IC fabrication. This type of illumination also allows for efficient use of a technique known as video integration to increase the video signal to noise ratio. Video integration is implemented by blanking the electron readout ~eam in the vidicon image tube for a desired number of frames allowing the ~V
~30 image in the form of a photocathode charge or conductivity difference to build up with time resulting in an increased ~ideo signal when the ~idicon target is first allowed to be sampled.
3 5'~ '~
.
Initial mechanical p~sitioning is carried out by the wafer loading mechanism to bring the mask and wafer into general alignment. The television camera scans over the portions of the mask and wafer in the viewing field and provides its video - output to a line position detector 47 during one frame. Th~
detector, in a manner to be more fully described below, detects the presence of the lines on the alignment patterns. Upon detection, these positions are digitized and temporarily stoxed in a memory buffer 49 and ~hen in a microcomputer memory. The digitized information is then available to a microcomputer 51 in which computations are carried out in order to determine whether or not the mask pattern is aligned , with the wafer pattern. Depending on the degree of misalignment, outputs are provided to an alignment motor drive 53 which drives the wafer stage, in the manner described in the afore-mentioned U.S. Patent 4,006,645.
The line position 47 detector, as the television camera scans horizontally will detect not only diagonal edges of the pattern but will tend to also detect any vertical lines.
The principle on which it operates is illustrated by FIG. 6.
The video signal 55 from a typical hollow target line 56 illuminated by dark field illumination has a characteristic voltage versus time wave shape 59 as shown in FIG. 6 as VI.
Detection is carried out as follows:
1. A second signal V2 i5 derived fro~ Vl by delaying it for a time ~ T.
2. The crosso~er point 61 when V2 becomes greater than Vl, is used to generate a signal (V out) which causes the contents of a counter to be stored in memory.
3~ The output signal ~Vout) is qualified by requiring that i,C)~ 2 :~ 'J ~i the s;gnal ~2 be a~ove a threshold volkage V~ (i.e., noise level~.
The resul~ing pDsitive g~ing edge o the VOUt pulse 63 will be generated at a time delayed by a consta~t amount after the center of the waveform is encountered. This constant delay is eq~al t~ one half of the total delay line time ~ t. The optimum time delay~tvaries for different target line-widths but small variations in line sizes or edge pro~iles can be readily accommodated by a fixed time delay. FIG. 7 shows a schematic diagram of the line position detector.
Figure 1~ shows a way in which the edge positlcn signal Vout is converted to a number corresponding to its horizontal position which may be stored in the microcomputer memory~
Digitization of the horizontal position of a line or edge is accomplished by starting a counter at the beginning of each horizontal sc~n line and incrementing it at a 10 MHZ rate.
When an edge is detected, its position is stored in the micro-computer memory as an eight bit word corresponding to the count when the edge was ~etected. The 10 MHZ counting rate permits each horizontal TV line to be divided into 2 acguisitîorl zones each having 256 possible line positions. Each line has 16 words of compyter memory reserved allowing as many as 1~ edge positions, and a zero wor~ designating end of valid data. If one uses 170 l`ines in each acguisition zone, a total of 16 by 170 or 2720 words of memory are required for each acquisition ~one.
At the end of the digitizing, there will be stored in a memory associated with the micro-computer the locations of each of the edge crossings. The magnitude of the word in memory represents the horizontal posit;on coordinate; and the memory location indicates the vertical position coordinate.
A computer program for the microprocessor n~ to carry out the identification of targets and a positioning of the wafer stage to brlng ~e targets _ g ~
~ 357~ EO-239~
into alignment, basically does the following:
1. Searches through the raw data stored in the memory looking for diagonal lines. All diagonal lines having three or more consecutive points are listed.
2. The endpolnts and y-interCeptS of each diagonal line are computed.
3. Close-by, like slope diagonal lines are combined;
thus reducing the number of endpoints and y intercepts.
The resul~ing pDsitive g~ing edge o the VOUt pulse 63 will be generated at a time delayed by a consta~t amount after the center of the waveform is encountered. This constant delay is eq~al t~ one half of the total delay line time ~ t. The optimum time delay~tvaries for different target line-widths but small variations in line sizes or edge pro~iles can be readily accommodated by a fixed time delay. FIG. 7 shows a schematic diagram of the line position detector.
Figure 1~ shows a way in which the edge positlcn signal Vout is converted to a number corresponding to its horizontal position which may be stored in the microcomputer memory~
Digitization of the horizontal position of a line or edge is accomplished by starting a counter at the beginning of each horizontal sc~n line and incrementing it at a 10 MHZ rate.
When an edge is detected, its position is stored in the micro-computer memory as an eight bit word corresponding to the count when the edge was ~etected. The 10 MHZ counting rate permits each horizontal TV line to be divided into 2 acguisitîorl zones each having 256 possible line positions. Each line has 16 words of compyter memory reserved allowing as many as 1~ edge positions, and a zero wor~ designating end of valid data. If one uses 170 l`ines in each acguisition zone, a total of 16 by 170 or 2720 words of memory are required for each acquisition ~one.
At the end of the digitizing, there will be stored in a memory associated with the micro-computer the locations of each of the edge crossings. The magnitude of the word in memory represents the horizontal posit;on coordinate; and the memory location indicates the vertical position coordinate.
A computer program for the microprocessor n~ to carry out the identification of targets and a positioning of the wafer stage to brlng ~e targets _ g ~
~ 357~ EO-239~
into alignment, basically does the following:
1. Searches through the raw data stored in the memory looking for diagonal lines. All diagonal lines having three or more consecutive points are listed.
2. The endpolnts and y-interCeptS of each diagonal line are computed.
3. Close-by, like slope diagonal lines are combined;
thus reducing the number of endpoints and y intercepts.
4. The known mask target size is used to predict y-intercept spacing for mask targets. Y-intercept spacings from like-slope line pairs corresponding to the mask spacing are listed and a mid-point calculated for each pair. If more than one line pair is found for each slope, the lines with the largest number of data points are usedO
S. From the midpoints of oppositely sloping diagonal pairs, the center of the mask target is computed~
6. The same procedure is used to find the wafer target center and the mask and wafer target separation is calculated.
20` 7. The information from the other side of the split field viewing system is used to ~ind its mask and wafer target separation in the same fashion.
8. The separations from both viewing sites axe used to compute the worst alignment error~
9. If the error is greater than the predetermined limit, e.g., l.0~im, an output is provided to drive the wafer stage to correct the misalignment and the procedures to put another alignment picture into memory and compute the alignment error are repeated. If the error is under the limit, the exposure is allowed to take place.
.
~ ~ ~g5 ~ EO-2399 In order to further reduce computer memory storage re~uire-ments, further processing of edge position data before storage in memory is possible. FIG. 9 illustrates one p~ssibility.
In this scheme, a plurality of 256 bit shift registers 101 are provided and connected such that the output of the first shift register 101 is the input to the first stage of the - second shift register and so forth. Each shift register stores one line of data. Outputs are taken from the fixst stage of the first shift register 101, the second stage of the second shift 101 and the third stage of the third shift register 101 to an AND gate 103. A 10 MHZ output from a clock provides the shift command into the shift régisters. The data input is the output of the line position detector 47. Thus, this data is sampled and loaded into the register and con~inually shifted therethrough. Each shift register 101 will contain one line of data in digital form, "ls" indicating narrow lines or edges and the absence of a "1" indicating the absence of narrow lines or edges. If a diagonal line is present, a diagonal of "ls" should appear as shown on the figure. When this ~0 occurs, a diagonal line, which normally only appears in the alignment target geometries has been detected and an output from the AND gate 103 occurs, which output can then be stored in memory. In other words, there will be stored in memory a value corresponding to the hori20ntal location of the "1" which has been identified as belonging to a diagonal. A slightly different arrangement of the AND gate inputs is required to detect lines or edges of opposite slope.
If the horizontal digitization rate and the vertical spacing between the readout lines in the TV camera do not correspond to the same distance on the TV picture, then
S. From the midpoints of oppositely sloping diagonal pairs, the center of the mask target is computed~
6. The same procedure is used to find the wafer target center and the mask and wafer target separation is calculated.
20` 7. The information from the other side of the split field viewing system is used to ~ind its mask and wafer target separation in the same fashion.
8. The separations from both viewing sites axe used to compute the worst alignment error~
9. If the error is greater than the predetermined limit, e.g., l.0~im, an output is provided to drive the wafer stage to correct the misalignment and the procedures to put another alignment picture into memory and compute the alignment error are repeated. If the error is under the limit, the exposure is allowed to take place.
.
~ ~ ~g5 ~ EO-2399 In order to further reduce computer memory storage re~uire-ments, further processing of edge position data before storage in memory is possible. FIG. 9 illustrates one p~ssibility.
In this scheme, a plurality of 256 bit shift registers 101 are provided and connected such that the output of the first shift register 101 is the input to the first stage of the - second shift register and so forth. Each shift register stores one line of data. Outputs are taken from the fixst stage of the first shift register 101, the second stage of the second shift 101 and the third stage of the third shift register 101 to an AND gate 103. A 10 MHZ output from a clock provides the shift command into the shift régisters. The data input is the output of the line position detector 47. Thus, this data is sampled and loaded into the register and con~inually shifted therethrough. Each shift register 101 will contain one line of data in digital form, "ls" indicating narrow lines or edges and the absence of a "1" indicating the absence of narrow lines or edges. If a diagonal line is present, a diagonal of "ls" should appear as shown on the figure. When this ~0 occurs, a diagonal line, which normally only appears in the alignment target geometries has been detected and an output from the AND gate 103 occurs, which output can then be stored in memory. In other words, there will be stored in memory a value corresponding to the hori20ntal location of the "1" which has been identified as belonging to a diagonal. A slightly different arrangement of the AND gate inputs is required to detect lines or edges of opposite slope.
If the horizontal digitization rate and the vertical spacing between the readout lines in the TV camera do not correspond to the same distance on the TV picture, then
5'7 g some modiica~ion of the above scheme is necessary. One possibility is simply to choose a diayonal line having a slope so that the intersection by two adjacent horizontal readout lines corresponds to an integral number of ~igitization ~paces (equal ver~ical to horizontal digitization ratio). This results in a digitization error of half of the digitization increment. (If the increment is one micron and the line is assumed to lie in the middle of the increment but lies instead at the edge then the error is half the increment.) The digi-tization error can be reduced by choosing a target line slope and a readout and digitization scheme that does not possess an integral number of digitization spaces between adjacent horizontal TV readout lines. For example, if 45 target lines are used with a digitization scheme having a 1.5 micron space between horizontal lines and a 1.0 micron digitization increment along each line (1.5:1 vertical to horizontal digitization ratio), then the worst error due to diyitization will be 0.25 micron averaged ~er two adjacent lines. With this scheme, the correlator would have to include two possible edge locations on every other line. This is illustrated in Figure 9.
A schematic of the digitizer and memory buffer is shown in Figure 10. The vertical and horizontal synchronization pulses generated by the TV camera are used by the memory address logic to determine when the TV signal being read out is contained in either of the two acquistion zones.
Typically, each acquisition zone is a rectangular area spanning most of one or the other halves of the split viewing field.
Once the TV camera readout beam crosses the edge of an acquisition zone, an edge position counter 105 is incremented at a 10 megahertz rate by a clock 106 and an edge counter 107 is enabled.
A signal indicating the presence of a target edge causes the count in the position counter 105 to be held in a latch 108 and the edge counter 107 to be incremented. If the number in 1 ~957~ EO-2399 ' the edge counter 107 is less than 16, then the memory address logic 109 causes the number in the latch 108 to be stored in the computer memory 110 at an addres~ which is offset by 16 times the horizontal line number plus the edge counter number.
If the computer memory is sufficiently fast, the line edge position can be stored directly without using a fast buffer memory.
,
A schematic of the digitizer and memory buffer is shown in Figure 10. The vertical and horizontal synchronization pulses generated by the TV camera are used by the memory address logic to determine when the TV signal being read out is contained in either of the two acquistion zones.
Typically, each acquisition zone is a rectangular area spanning most of one or the other halves of the split viewing field.
Once the TV camera readout beam crosses the edge of an acquisition zone, an edge position counter 105 is incremented at a 10 megahertz rate by a clock 106 and an edge counter 107 is enabled.
A signal indicating the presence of a target edge causes the count in the position counter 105 to be held in a latch 108 and the edge counter 107 to be incremented. If the number in 1 ~957~ EO-2399 ' the edge counter 107 is less than 16, then the memory address logic 109 causes the number in the latch 108 to be stored in the computer memory 110 at an addres~ which is offset by 16 times the horizontal line number plus the edge counter number.
If the computer memory is sufficiently fast, the line edge position can be stored directly without using a fast buffer memory.
,
Claims (3)
1. A method of aligning a mask with a microcircuit wafer comprising:
a) exposing a first diamond shaped target of a size that can be printed on a microcircuit chip without interfering with the lines thereon, consisting only of lines diagonally disposed with respect to the readout of an image sensor such as a TV camera, on at least two positions on the wafer, using a first mask also containing circuit details;
b) processing said microcircuit so as to include the exposed features including said first target;
c) placing a diamond shaped target of a second size on a second mask to be exposed on said microcircuit after a first mask;
d) prior to exposing said second mask centering said first and second target one within the other at two positions on the wafer.
a) exposing a first diamond shaped target of a size that can be printed on a microcircuit chip without interfering with the lines thereon, consisting only of lines diagonally disposed with respect to the readout of an image sensor such as a TV camera, on at least two positions on the wafer, using a first mask also containing circuit details;
b) processing said microcircuit so as to include the exposed features including said first target;
c) placing a diamond shaped target of a second size on a second mask to be exposed on said microcircuit after a first mask;
d) prior to exposing said second mask centering said first and second target one within the other at two positions on the wafer.
2. The method according to claim 1 wherein additional steps of exposing and processing circuit features are per-formed and further including exposing a target of said first size during each step.
3. The method according to claim 1 wherein said first target is larger than said second target.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA000416531A CA1159579A (en) | 1979-03-12 | 1982-11-26 | Method for automatic mask alignment |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/019,964 US4353087A (en) | 1979-03-12 | 1979-03-12 | Automatic mask alignment |
US019,964 | 1979-03-12 | ||
CA000345271A CA1150418A (en) | 1979-03-12 | 1980-02-08 | Automatic mask alignment |
CA000416531A CA1159579A (en) | 1979-03-12 | 1982-11-26 | Method for automatic mask alignment |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1159579A true CA1159579A (en) | 1983-12-27 |
Family
ID=27166578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA000416531A Expired CA1159579A (en) | 1979-03-12 | 1982-11-26 | Method for automatic mask alignment |
Country Status (1)
Country | Link |
---|---|
CA (1) | CA1159579A (en) |
-
1982
- 1982-11-26 CA CA000416531A patent/CA1159579A/en not_active Expired
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