CA1129081A - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- CA1129081A CA1129081A CA319,704A CA319704A CA1129081A CA 1129081 A CA1129081 A CA 1129081A CA 319704 A CA319704 A CA 319704A CA 1129081 A CA1129081 A CA 1129081A
- Authority
- CA
- Canada
- Prior art keywords
- voltage
- insulator
- field effect
- imaging device
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 230000005669 field effect Effects 0.000 claims abstract description 26
- 238000009825 accumulation Methods 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5224/1978 | 1978-01-23 | ||
JP53005224A JPS6017196B2 (ja) | 1978-01-23 | 1978-01-23 | 固体撮像素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1129081A true CA1129081A (en) | 1982-08-03 |
Family
ID=11605214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA319,704A Expired CA1129081A (en) | 1978-01-23 | 1979-01-16 | Solid-state imaging device |
Country Status (7)
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5822901B2 (ja) * | 1978-12-01 | 1983-05-12 | 株式会社日立製作所 | 固体撮像装置 |
JPS6033340B2 (ja) * | 1979-02-19 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
JPS6033342B2 (ja) * | 1979-06-04 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
DE3005956A1 (de) * | 1980-02-16 | 1981-09-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Anordnung zur darstellung von bildinhalten mit lichtemittierenden dioden |
DE3044341C2 (de) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Fototransistor |
DE3138294A1 (de) * | 1981-09-25 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit |
US4433343A (en) * | 1981-12-22 | 1984-02-21 | Levine Michael A | Extrinsic infrared detector with dopant site charge-neutralization |
US4727406A (en) * | 1982-02-12 | 1988-02-23 | Rockwell International Corporation | Pre-multiplexed detector array |
US4862237A (en) * | 1983-01-10 | 1989-08-29 | Seiko Epson Corporation | Solid state image sensor |
JP2601271B2 (ja) * | 1987-04-28 | 1997-04-16 | オリンパス光学工業株式会社 | 固体撮像装置 |
JPH03181282A (ja) * | 1989-12-11 | 1991-08-07 | Fuji Photo Film Co Ltd | 固体撮像デバイス |
US5045680A (en) * | 1990-01-18 | 1991-09-03 | International Business Machines Corporation | Integrated circuit optoelectronic toggle F/F |
JPH05267695A (ja) * | 1991-11-06 | 1993-10-15 | Mitsubishi Electric Corp | 赤外線撮像装置 |
US5587596A (en) * | 1995-09-20 | 1996-12-24 | National Semiconductor Corporation | Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
JP4200545B2 (ja) | 1998-06-08 | 2008-12-24 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
US6359293B1 (en) * | 1999-08-17 | 2002-03-19 | Agere Systems Guardian Corp. | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660667A (en) * | 1970-06-22 | 1972-05-02 | Rca Corp | Image sensor array in which each element employs two phototransistors one of which stores charge |
US3683193A (en) * | 1970-10-26 | 1972-08-08 | Rca Corp | Bucket brigade scanning of sensor array |
US3931465A (en) * | 1975-01-13 | 1976-01-06 | Rca Corporation | Blooming control for charge coupled imager |
JPS5310433B2 (US06650917-20031118-M00005.png) * | 1975-03-10 | 1978-04-13 | ||
JPS5345119A (en) * | 1976-10-06 | 1978-04-22 | Hitachi Ltd | Solid state pickup element |
JPS5389617A (en) * | 1977-01-19 | 1978-08-07 | Hitachi Ltd | Driving method of solid image pickup element |
GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
JPS5396720A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Solid image pickup element |
JPS605108B2 (ja) * | 1977-08-01 | 1985-02-08 | 株式会社日立製作所 | 固体擦像装置 |
GB2008889B (en) * | 1977-11-07 | 1982-08-04 | Hitachi Ltd | Solid state image pickup device |
CA2203422C (en) * | 1994-11-04 | 2005-09-20 | Karl Werner Dietrich | Heat-insulating body |
-
1978
- 1978-01-23 JP JP53005224A patent/JPS6017196B2/ja not_active Expired
-
1979
- 1979-01-16 CA CA319,704A patent/CA1129081A/en not_active Expired
- 1979-01-17 DE DE2901735A patent/DE2901735C2/de not_active Expired
- 1979-01-18 FR FR7901200A patent/FR2415398A1/fr active Granted
- 1979-01-22 GB GB792245A patent/GB2013026B/en not_active Expired
- 1979-01-22 US US06/005,567 patent/US4223330A/en not_active Expired - Lifetime
- 1979-01-22 NL NL7900496A patent/NL7900496A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NL7900496A (nl) | 1979-07-25 |
FR2415398A1 (fr) | 1979-08-17 |
US4223330A (en) | 1980-09-16 |
DE2901735C2 (de) | 1983-10-27 |
DE2901735A1 (de) | 1979-07-26 |
GB2013026B (en) | 1982-05-19 |
JPS5498521A (en) | 1979-08-03 |
FR2415398B1 (US06650917-20031118-M00005.png) | 1984-07-20 |
GB2013026A (en) | 1979-08-01 |
JPS6017196B2 (ja) | 1985-05-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |