CA1128635A - Semiconductor lasers - Google Patents
Semiconductor lasersInfo
- Publication number
- CA1128635A CA1128635A CA345,466A CA345466A CA1128635A CA 1128635 A CA1128635 A CA 1128635A CA 345466 A CA345466 A CA 345466A CA 1128635 A CA1128635 A CA 1128635A
- Authority
- CA
- Canada
- Prior art keywords
- laser
- light emitting
- emitting diode
- semiconductor device
- resonant cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000002269 spontaneous effect Effects 0.000 claims abstract description 19
- 230000010355 oscillation Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 230000010349 pulsation Effects 0.000 abstract description 10
- 230000002459 sustained effect Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 230000001052 transient effect Effects 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 241001611093 Stimula Species 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4006—Injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA345,466A CA1128635A (en) | 1980-02-12 | 1980-02-12 | Semiconductor lasers |
| US06/121,172 US4325034A (en) | 1980-02-12 | 1980-02-13 | Semiconductor lasers with integrally formed light emitting diodes |
| GB8102641A GB2070323B (en) | 1980-02-12 | 1981-01-28 | Semiconductor lasers |
| JP1703181A JPS56125887A (en) | 1980-02-12 | 1981-02-09 | Semiconductor laser unit |
| FR8102719A FR2475813A1 (fr) | 1980-02-12 | 1981-02-11 | Laser a semi-conducteur perfectionne |
| JP1988107021U JPS6429865U (enrdf_load_stackoverflow) | 1980-02-12 | 1988-08-15 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA345,466A CA1128635A (en) | 1980-02-12 | 1980-02-12 | Semiconductor lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1128635A true CA1128635A (en) | 1982-07-27 |
Family
ID=4116223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA345,466A Expired CA1128635A (en) | 1980-02-12 | 1980-02-12 | Semiconductor lasers |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JPS56125887A (enrdf_load_stackoverflow) |
| CA (1) | CA1128635A (enrdf_load_stackoverflow) |
| GB (1) | GB2070323B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD560122S1 (en) | 2005-07-29 | 2008-01-22 | Kapak Corporation | Pouch for liquids |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6054797B2 (ja) * | 1978-07-18 | 1985-12-02 | 日本電気株式会社 | 半導体接合レ−ザ |
-
1980
- 1980-02-12 CA CA345,466A patent/CA1128635A/en not_active Expired
-
1981
- 1981-01-28 GB GB8102641A patent/GB2070323B/en not_active Expired
- 1981-02-09 JP JP1703181A patent/JPS56125887A/ja active Pending
-
1988
- 1988-08-15 JP JP1988107021U patent/JPS6429865U/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2070323A (en) | 1981-09-03 |
| GB2070323B (en) | 1984-01-25 |
| JPS56125887A (en) | 1981-10-02 |
| JPS6429865U (enrdf_load_stackoverflow) | 1989-02-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |