CA1119733A - Narrow channel mos devices and method of manufacturing - Google Patents
Narrow channel mos devices and method of manufacturingInfo
- Publication number
- CA1119733A CA1119733A CA000316831A CA316831A CA1119733A CA 1119733 A CA1119733 A CA 1119733A CA 000316831 A CA000316831 A CA 000316831A CA 316831 A CA316831 A CA 316831A CA 1119733 A CA1119733 A CA 1119733A
- Authority
- CA
- Canada
- Prior art keywords
- region
- impurity
- substrate
- layer
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 210000003323 beak Anatomy 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000001590 oxidative effect Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 101150068246 V-MOS gene Proteins 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 241000478345 Afer Species 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 241000206607 Porphyra umbilicalis Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
- H10D30/0287—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the source electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
- H10D30/0289—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/292—Non-planar channels of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/378—Contact regions to the substrate regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/512—Disposition of the gate electrodes, e.g. buried gates
- H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US862,715 | 1977-12-21 | ||
| US05/862,715 US4217599A (en) | 1977-12-21 | 1977-12-21 | Narrow channel MOS devices and method of manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1119733A true CA1119733A (en) | 1982-03-09 |
Family
ID=25339135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000316831A Expired CA1119733A (en) | 1977-12-21 | 1978-11-24 | Narrow channel mos devices and method of manufacturing |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4217599A (en, 2012) |
| JP (1) | JPS5491187A (en, 2012) |
| CA (1) | CA1119733A (en, 2012) |
| DE (1) | DE2854073A1 (en, 2012) |
| FR (1) | FR2412942A1 (en, 2012) |
| GB (1) | GB2011170B (en, 2012) |
| NL (1) | NL7811920A (en, 2012) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4262298A (en) * | 1979-09-04 | 1981-04-14 | Burroughs Corporation | Ram having a stabilized substrate bias and low-threshold narrow-width transfer gates |
| DE2947350A1 (de) * | 1979-11-23 | 1981-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie |
| US4370669A (en) * | 1980-07-16 | 1983-01-25 | General Motors Corporation | Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit |
| US4654680A (en) * | 1980-09-24 | 1987-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Sidewall gate IGFET |
| IT1235693B (it) * | 1989-05-02 | 1992-09-21 | Sgs Thomson Microelectronics | Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi. |
| USRE35827E (en) * | 1989-05-02 | 1998-06-23 | Sgs-Thomson Microelectronics S.R.L. | Surface field effect transistor with depressed source and/or drain areas for ULSI integrated devices |
| US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
| US5460985A (en) * | 1991-07-26 | 1995-10-24 | Ipics Corporation | Production method of a verticle type MOSFET |
| US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
| US6261973B1 (en) * | 1997-12-31 | 2001-07-17 | Texas Instruments Incorporated | Remote plasma nitridation to allow selectively etching of oxide |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49126281A (en, 2012) * | 1973-04-04 | 1974-12-03 | ||
| US3946419A (en) * | 1973-06-27 | 1976-03-23 | International Business Machines Corporation | Field effect transistor structure for minimizing parasitic inversion and process for fabricating |
| JPS5222480A (en) * | 1975-08-14 | 1977-02-19 | Nippon Telegr & Teleph Corp <Ntt> | Insulating gate field effect transistor |
| US4011105A (en) * | 1975-09-15 | 1977-03-08 | Mos Technology, Inc. | Field inversion control for n-channel device integrated circuits |
| US4055444A (en) * | 1976-01-12 | 1977-10-25 | Texas Instruments Incorporated | Method of making N-channel MOS integrated circuits |
| JPS6032989B2 (ja) * | 1976-04-07 | 1985-07-31 | 松下電器産業株式会社 | Ｍｏｓ型半導体装置の製造方法 |
| US4029522A (en) * | 1976-06-30 | 1977-06-14 | International Business Machines Corporation | Method to fabricate ion-implanted layers with abrupt edges to reduce the parasitic resistance of Schottky barrier fets and bipolar transistors |
| US4078947A (en) * | 1976-08-05 | 1978-03-14 | International Business Machines Corporation | Method for forming a narrow channel length MOS field effect transistor |
| US4084175A (en) * | 1976-09-30 | 1978-04-11 | Research Corporation | Double implanted planar mos device with v-groove and process of manufacture thereof |
| US4044452A (en) * | 1976-10-06 | 1977-08-30 | International Business Machines Corporation | Process for making field effect and bipolar transistors on the same semiconductor chip |
| US4108686A (en) * | 1977-07-22 | 1978-08-22 | Rca Corp. | Method of making an insulated gate field effect transistor by implanted double counterdoping |
| US4132998A (en) * | 1977-08-29 | 1979-01-02 | Rca Corp. | Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate |
-
1977
- 1977-12-21 US US05/862,715 patent/US4217599A/en not_active Expired - Lifetime
-
1978
- 1978-11-24 CA CA000316831A patent/CA1119733A/en not_active Expired
- 1978-12-06 NL NL7811920A patent/NL7811920A/xx not_active Application Discontinuation
- 1978-12-13 GB GB7848277A patent/GB2011170B/en not_active Expired
- 1978-12-14 DE DE19782854073 patent/DE2854073A1/de not_active Ceased
- 1978-12-18 JP JP15809278A patent/JPS5491187A/ja active Granted
- 1978-12-19 FR FR7836394A patent/FR2412942A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2011170A (en) | 1979-07-04 |
| NL7811920A (nl) | 1979-06-25 |
| GB2011170B (en) | 1982-06-30 |
| DE2854073A1 (de) | 1979-07-12 |
| US4217599A (en) | 1980-08-12 |
| JPS5491187A (en) | 1979-07-19 |
| FR2412942A1 (fr) | 1979-07-20 |
| JPS6318346B2 (en, 2012) | 1988-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |