CA1099409A - Circuit de difference pour dispositifs a transfert de charge - Google Patents
Circuit de difference pour dispositifs a transfert de chargeInfo
- Publication number
- CA1099409A CA1099409A CA293,097A CA293097A CA1099409A CA 1099409 A CA1099409 A CA 1099409A CA 293097 A CA293097 A CA 293097A CA 1099409 A CA1099409 A CA 1099409A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- potential well
- transfer
- electrode plate
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000002800 charge carrier Substances 0.000 claims description 8
- 230000000717 retained effect Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/10—Measuring sum, difference or ratio
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Current Or Voltage (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78572377A | 1977-04-07 | 1977-04-07 | |
| US785,723 | 1977-04-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1099409A true CA1099409A (fr) | 1981-04-14 |
Family
ID=25136433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA293,097A Expired CA1099409A (fr) | 1977-04-07 | 1977-12-14 | Circuit de difference pour dispositifs a transfert de charge |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS53125872A (fr) |
| CA (1) | CA1099409A (fr) |
| DE (1) | DE2811146A1 (fr) |
| FR (1) | FR2386942A1 (fr) |
| IT (1) | IT1113115B (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4239983A (en) * | 1979-03-09 | 1980-12-16 | International Business Machines Corporation | Non-destructive charge transfer device differencing circuit |
| FR2455772B1 (fr) * | 1979-05-04 | 1986-01-17 | Thomson Csf | Dispositif a transfert de charges de soustraction et de generation de quantites de charges et systeme muni d'un tel dispositif |
| DE2936704A1 (de) * | 1979-09-11 | 1981-03-26 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung mit einem zweidimensionalen bildsensor |
| DE2939490A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter zweidimensionaler bildsensor mit einer differenzbildenden stufe |
| US4639678A (en) * | 1983-12-30 | 1987-01-27 | International Business Machines Corporation | Absolute charge difference detection method and structure for a charge coupled device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3623132A (en) * | 1970-12-14 | 1971-11-23 | North American Rockwell | Charge sensing circuit |
| IL52589A (en) * | 1976-09-15 | 1979-09-30 | Hughes Aircraft Co | Charge coupled device subtractor |
-
1977
- 1977-12-14 CA CA293,097A patent/CA1099409A/fr not_active Expired
-
1978
- 1978-03-07 JP JP2508578A patent/JPS53125872A/ja active Pending
- 1978-03-07 FR FR7807534A patent/FR2386942A1/fr active Granted
- 1978-03-15 DE DE19782811146 patent/DE2811146A1/de not_active Withdrawn
- 1978-03-21 IT IT21405/78A patent/IT1113115B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53125872A (en) | 1978-11-02 |
| FR2386942A1 (en) | 1978-11-03 |
| IT7821405A0 (it) | 1978-03-21 |
| IT1113115B (it) | 1986-01-20 |
| FR2386942B1 (fr) | 1982-07-23 |
| DE2811146A1 (de) | 1978-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |