CA1087756A - High voltage thyristor - Google Patents
High voltage thyristorInfo
- Publication number
- CA1087756A CA1087756A CA281,590A CA281590A CA1087756A CA 1087756 A CA1087756 A CA 1087756A CA 281590 A CA281590 A CA 281590A CA 1087756 A CA1087756 A CA 1087756A
- Authority
- CA
- Canada
- Prior art keywords
- zone
- anode
- major surface
- disposed
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000903 blocking effect Effects 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 230000005684 electric field Effects 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 239000002674 ointment Substances 0.000 description 43
- 230000000875 corresponding effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70635576A | 1976-07-19 | 1976-07-19 | |
US706,355 | 1976-07-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1087756A true CA1087756A (en) | 1980-10-14 |
Family
ID=24837198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA281,590A Expired CA1087756A (en) | 1976-07-19 | 1977-06-28 | High voltage thyristor |
Country Status (12)
Country | Link |
---|---|
JP (1) | JPS5311586A (sv) |
AU (1) | AU514314B2 (sv) |
BE (1) | BE856827A (sv) |
CA (1) | CA1087756A (sv) |
DE (1) | DE2732360A1 (sv) |
FR (1) | FR2393431A1 (sv) |
GB (1) | GB1585790A (sv) |
IN (1) | IN148931B (sv) |
NL (1) | NL7706586A (sv) |
PL (1) | PL113044B1 (sv) |
SE (1) | SE7708242L (sv) |
ZA (1) | ZA773577B (sv) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56154525A (en) * | 1980-04-23 | 1981-11-30 | Mitsubishi Rayon Co | Production of special knot like processed yarn |
JPS56154527A (en) * | 1980-04-28 | 1981-11-30 | Mitsubishi Rayon Co | Production of special knot like processed yarn |
US4595941A (en) * | 1980-12-03 | 1986-06-17 | Rca Corporation | Protection circuit for integrated circuit devices |
US10197999B2 (en) | 2015-10-16 | 2019-02-05 | Lemmings, Llc | Robotic golf caddy |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1539877A1 (de) * | 1965-11-19 | 1969-12-11 | Itt Ind Gmbh Deutsche | Schaltbares Halbleiterbauelement |
US3432731A (en) * | 1966-10-31 | 1969-03-11 | Fairchild Camera Instr Co | Planar high voltage four layer structures |
NL7114864A (sv) * | 1970-10-30 | 1972-05-03 | ||
JPS541431B2 (sv) * | 1973-12-26 | 1979-01-24 |
-
1977
- 1977-06-14 ZA ZA00773577A patent/ZA773577B/xx unknown
- 1977-06-15 NL NL7706586A patent/NL7706586A/xx not_active Application Discontinuation
- 1977-06-21 AU AU26273/77A patent/AU514314B2/en not_active Expired
- 1977-06-21 IN IN926/CAL/77A patent/IN148931B/en unknown
- 1977-06-28 CA CA281,590A patent/CA1087756A/en not_active Expired
- 1977-07-13 JP JP8309977A patent/JPS5311586A/ja active Pending
- 1977-07-14 BE BE179356A patent/BE856827A/xx unknown
- 1977-07-15 SE SE7708242A patent/SE7708242L/sv unknown
- 1977-07-18 GB GB30010/77A patent/GB1585790A/en not_active Expired
- 1977-07-18 DE DE19772732360 patent/DE2732360A1/de not_active Withdrawn
- 1977-07-19 FR FR7722122A patent/FR2393431A1/fr not_active Withdrawn
- 1977-07-19 PL PL1977199746A patent/PL113044B1/pl unknown
Also Published As
Publication number | Publication date |
---|---|
PL199746A1 (pl) | 1978-03-28 |
BE856827A (fr) | 1978-01-16 |
PL113044B1 (en) | 1980-11-29 |
SE7708242L (sv) | 1978-01-20 |
GB1585790A (en) | 1981-03-11 |
NL7706586A (nl) | 1978-01-23 |
ZA773577B (en) | 1978-05-30 |
FR2393431A1 (fr) | 1978-12-29 |
IN148931B (sv) | 1981-07-25 |
DE2732360A1 (de) | 1978-01-26 |
AU2627377A (en) | 1979-01-04 |
JPS5311586A (en) | 1978-02-02 |
AU514314B2 (en) | 1981-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4060821A (en) | Field controlled thyristor with buried grid | |
US4298881A (en) | Semiconductor device with double moat and double channel stoppers | |
GB2137811A (en) | High power mosfet with direct connection from connection pads to underlying silicon | |
CA1037160A (en) | Semiconductor device having at least one pn junction and channel stopper surrounded by a protective conducting layer | |
JPH0455347B2 (sv) | ||
US4786959A (en) | Gate turn-off thyristor | |
US4047196A (en) | High voltage semiconductor device having a novel edge contour | |
US3771029A (en) | Thyristor with auxiliary emitter connected to base between base groove and main emitter | |
US3855611A (en) | Thyristor devices | |
US5291040A (en) | Deactivatable thyristor with turn-off current path | |
US4000507A (en) | Semiconductor device having two annular electrodes | |
US3696273A (en) | Bilateral, gate-controlled semiconductor devices | |
CA1087756A (en) | High voltage thyristor | |
US4825266A (en) | Semiconductor diode | |
US5014101A (en) | Semiconductor IGBT with improved turn-off switching time | |
GB2051479A (en) | Light-controllable transistor | |
US4212022A (en) | Field effect transistor with gate and drain electrodes on the side surface of a mesa | |
JPH06283727A (ja) | 電力用半導体素子 | |
US4170019A (en) | Semiconductor device with variable grid openings for controlling turn-off pattern | |
EP0064614B1 (en) | Improved emitter structure for semiconductor devices | |
US4758872A (en) | Integrated circuit fabricated in a semiconductor substrate | |
US3906545A (en) | Thyristor structure | |
JPH0126549B2 (sv) | ||
US3256470A (en) | Controllable semi-conductor device | |
US4825270A (en) | Gate turn-off thyristor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MKEX | Expiry |