CA1086610A - Accelerated growth from the gaseous phase of gallium arsenide crystals - Google Patents

Accelerated growth from the gaseous phase of gallium arsenide crystals

Info

Publication number
CA1086610A
CA1086610A CA270,487A CA270487A CA1086610A CA 1086610 A CA1086610 A CA 1086610A CA 270487 A CA270487 A CA 270487A CA 1086610 A CA1086610 A CA 1086610A
Authority
CA
Canada
Prior art keywords
gaseous phase
molar fraction
gallium arsenide
face
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA270,487A
Other languages
English (en)
French (fr)
Inventor
Laszlo Hollan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1086610A publication Critical patent/CA1086610A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/2911—
    • H10P14/24—
    • H10P14/3221—
    • H10P14/3421—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
CA270,487A 1976-02-06 1977-01-26 Accelerated growth from the gaseous phase of gallium arsenide crystals Expired CA1086610A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7603259A FR2356271A1 (fr) 1976-02-06 1976-02-06 Croissance acceleree en phase vapeur
FR7603259 1976-02-06

Publications (1)

Publication Number Publication Date
CA1086610A true CA1086610A (en) 1980-09-30

Family

ID=9168824

Family Applications (1)

Application Number Title Priority Date Filing Date
CA270,487A Expired CA1086610A (en) 1976-02-06 1977-01-26 Accelerated growth from the gaseous phase of gallium arsenide crystals

Country Status (6)

Country Link
US (1) US4172756A (index.php)
JP (1) JPS52113157A (index.php)
CA (1) CA1086610A (index.php)
DE (1) DE2703518C3 (index.php)
FR (1) FR2356271A1 (index.php)
GB (1) GB1570856A (index.php)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
JPS56138917A (en) * 1980-03-31 1981-10-29 Fujitsu Ltd Vapor phase epitaxial growth
FR2581711B1 (fr) * 1985-05-13 1987-11-20 Labo Electronique Physique Dispositif pour la regulation, l'interruption ou la commutation de fluides
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
US5348911A (en) * 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
DE3721638A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Materialsparendes verfahren zur herstellung von mischkristallen
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film
US4985281A (en) * 1988-08-22 1991-01-15 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition
US9834860B2 (en) * 2009-10-14 2017-12-05 Alta Devices, Inc. Method of high growth rate deposition for group III/V materials
US11393683B2 (en) * 2009-10-14 2022-07-19 Utica Leaseco, Llc Methods for high growth rate deposition for forming different cells on a wafer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
US3471324A (en) * 1966-12-23 1969-10-07 Texas Instruments Inc Epitaxial gallium arsenide
FR2075325A5 (index.php) * 1970-01-09 1971-10-08 Hitachi Ltd
JPS4834798A (index.php) * 1971-09-06 1973-05-22
US3975218A (en) * 1972-04-28 1976-08-17 Semimetals, Inc. Process for production of III-V compound epitaxial crystals
UST951008I4 (index.php) 1975-11-07 1976-10-05

Also Published As

Publication number Publication date
JPS52113157A (en) 1977-09-22
DE2703518B2 (de) 1980-02-14
FR2356271B1 (index.php) 1978-11-17
FR2356271A1 (fr) 1978-01-20
DE2703518C3 (de) 1980-10-02
DE2703518A1 (de) 1977-08-11
GB1570856A (en) 1980-07-09
US4172756A (en) 1979-10-30

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