CA1079612A - Method and apparatus for reducing residual stresses in crystals - Google Patents
Method and apparatus for reducing residual stresses in crystalsInfo
- Publication number
- CA1079612A CA1079612A CA279,208A CA279208A CA1079612A CA 1079612 A CA1079612 A CA 1079612A CA 279208 A CA279208 A CA 279208A CA 1079612 A CA1079612 A CA 1079612A
- Authority
- CA
- Canada
- Prior art keywords
- heat
- temperature
- conductive material
- melt
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims description 18
- 238000001816 cooling Methods 0.000 claims abstract description 33
- 239000000155 melt Substances 0.000 claims abstract description 26
- 230000012010 growth Effects 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910002804 graphite Inorganic materials 0.000 claims description 15
- 239000010439 graphite Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 9
- 230000008646 thermal stress Effects 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 230000036433 growing body Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 230000006872 improvement Effects 0.000 claims description 2
- 230000035882 stress Effects 0.000 description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 239000007789 gas Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000005855 radiation Effects 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- IHQKEDIOMGYHEB-UHFFFAOYSA-M sodium dimethylarsinate Chemical class [Na+].C[As](C)([O-])=O IHQKEDIOMGYHEB-UHFFFAOYSA-M 0.000 description 3
- 101100379080 Emericella variicolor andB gene Proteins 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 210000002105 tongue Anatomy 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 206010016352 Feeling of relaxation Diseases 0.000 description 1
- 241000951490 Hylocharis chrysura Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
- Y10T117/1048—Pulling includes a horizontal component
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/761,949 US4158038A (en) | 1977-01-24 | 1977-01-24 | Method and apparatus for reducing residual stresses in crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1079612A true CA1079612A (en) | 1980-06-17 |
Family
ID=25063697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA279,208A Expired CA1079612A (en) | 1977-01-24 | 1977-05-26 | Method and apparatus for reducing residual stresses in crystals |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4158038A (en:Method) |
| JP (1) | JPS597677B2 (en:Method) |
| AU (1) | AU504739B2 (en:Method) |
| CA (1) | CA1079612A (en:Method) |
| DE (1) | DE2730162A1 (en:Method) |
| FR (1) | FR2377840A1 (en:Method) |
| GB (1) | GB1539124A (en:Method) |
| IL (1) | IL52003A (en:Method) |
| NL (1) | NL189616C (en:Method) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4317799A (en) * | 1979-03-12 | 1982-03-02 | Mobil Tyco Solar Energy Corporation | Belt-roller crystal pulling mechanism |
| US4267153A (en) * | 1979-08-09 | 1981-05-12 | Mobil Tyco Solar Energy Corporation | Gravity dampened guidance system |
| US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
| IN154501B (en:Method) * | 1980-03-10 | 1984-11-03 | Mobil Tyco Solar Energy Corp | |
| US4267010A (en) * | 1980-06-16 | 1981-05-12 | Mobil Tyco Solar Energy Corporation | Guidance mechanism |
| US4443411A (en) * | 1980-12-15 | 1984-04-17 | Mobil Solar Energy Corporation | Apparatus for controlling the atmosphere surrounding a crystal growth zone |
| US4390505A (en) * | 1981-03-30 | 1983-06-28 | Mobil Solar Energy Corporation | Crystal growth apparatus |
| US4440728A (en) | 1981-08-03 | 1984-04-03 | Mobil Solar Energy Corporation | Apparatus for growing tubular crystalline bodies |
| US4647437A (en) * | 1983-05-19 | 1987-03-03 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| JPS6096596A (ja) * | 1983-10-28 | 1985-05-30 | Sumitomo Electric Ind Ltd | 単結晶引上げ軸 |
| SU1592414A1 (ru) * | 1986-11-26 | 1990-09-15 | Vni Pk T I Elektrotermicheskog | Cпocoб bыpaщиbahия пpoфилиpobahhыx kpиctaллob tугoплabkиx coeдиhehий и уctpoйctbo для eгo ocущectbлehия |
| JPS644172U (en:Method) * | 1987-06-25 | 1989-01-11 | ||
| JPH0462170U (en:Method) * | 1990-10-08 | 1992-05-28 | ||
| JP3006669B2 (ja) * | 1995-06-20 | 2000-02-07 | 信越半導体株式会社 | 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置 |
| US6602345B1 (en) * | 1999-06-29 | 2003-08-05 | American Crystal Technologies, Inc., | Heater arrangement for crystal growth furnace |
| US6537372B1 (en) * | 1999-06-29 | 2003-03-25 | American Crystal Technologies, Inc. | Heater arrangement for crystal growth furnace |
| JP4059639B2 (ja) * | 2001-03-14 | 2008-03-12 | 株式会社荏原製作所 | 結晶の引上装置 |
| US6814802B2 (en) * | 2002-10-30 | 2004-11-09 | Evergreen Solar, Inc. | Method and apparatus for growing multiple crystalline ribbons from a single crucible |
| US7348076B2 (en) * | 2004-04-08 | 2008-03-25 | Saint-Gobain Ceramics & Plastics, Inc. | Single crystals and methods for fabricating same |
| KR101230279B1 (ko) * | 2006-09-22 | 2013-02-06 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | Ｃ－플레인 사파이어 재료의 형성 방법 |
| US8388751B2 (en) * | 2007-06-14 | 2013-03-05 | Max Era, Inc. | Controlling transport of gas borne contaminants across a ribbon surface |
| US20110155045A1 (en) * | 2007-06-14 | 2011-06-30 | Evergreen Solar, Inc. | Controlling the Temperature Profile in a Sheet Wafer |
| WO2008157313A1 (en) * | 2007-06-14 | 2008-12-24 | Evergreen Solar, Inc. | Ribbon crystal pulling furnace afterheater with at least one opening |
| US20090130415A1 (en) * | 2007-11-21 | 2009-05-21 | Saint-Gobain Ceramics & Plastics, Inc. | R-Plane Sapphire Method and Apparatus |
| US11047650B2 (en) | 2017-09-29 | 2021-06-29 | Saint-Gobain Ceramics & Plastics, Inc. | Transparent composite having a laminated structure |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3060065A (en) * | 1959-08-06 | 1962-10-23 | Theodore H Orem | Method for the growth of preferentially oriented single crystals of metals |
| US3342559A (en) * | 1964-04-27 | 1967-09-19 | Westinghouse Electric Corp | Apparatus for producing dendrites |
| US3453352A (en) * | 1964-12-14 | 1969-07-01 | Texas Instruments Inc | Method and apparatus for producing crystalline semiconductor ribbon |
| US3471266A (en) * | 1967-05-29 | 1969-10-07 | Tyco Laboratories Inc | Growth of inorganic filaments |
| US3650703A (en) * | 1967-09-08 | 1972-03-21 | Tyco Laboratories Inc | Method and apparatus for growing inorganic filaments, ribbon from the melt |
| US3591348A (en) * | 1968-01-24 | 1971-07-06 | Tyco Laboratories Inc | Method of growing crystalline materials |
| US3961905A (en) * | 1974-02-25 | 1976-06-08 | Corning Glass Works | Crucible and heater assembly for crystal growth from a melt |
| DE2520764A1 (de) * | 1975-05-09 | 1976-11-18 | Siemens Ag | Verfahren und vorrichtung zum herstellen von bandfoermigen einkristallen aus halbleitermaterial |
| DE2557186A1 (de) * | 1975-12-18 | 1977-06-23 | Siemens Ag | Verfahren und vorrichtung zum herstellen von halbleitermaterialstaeben, insbesondere von siliciumstaeben mit grossen durchmessern, durch tiegelfreies zonenschmelzen |
-
1977
- 1977-01-24 US US05/761,949 patent/US4158038A/en not_active Expired - Lifetime
- 1977-04-29 GB GB17931/77A patent/GB1539124A/en not_active Expired
- 1977-05-04 AU AU24849/77A patent/AU504739B2/en not_active Expired
- 1977-05-04 IL IL52003A patent/IL52003A/xx unknown
- 1977-05-23 NL NLAANVRAGE7705641,A patent/NL189616C/xx not_active IP Right Cessation
- 1977-05-26 CA CA279,208A patent/CA1079612A/en not_active Expired
- 1977-06-02 JP JP52065251A patent/JPS597677B2/ja not_active Expired
- 1977-06-16 FR FR7718567A patent/FR2377840A1/fr active Granted
- 1977-07-04 DE DE19772730162 patent/DE2730162A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2377840B1 (en:Method) | 1982-11-12 |
| US4158038A (en) | 1979-06-12 |
| IL52003A (en) | 1980-07-31 |
| GB1539124A (en) | 1979-01-24 |
| AU2484977A (en) | 1978-11-09 |
| DE2730162C2 (en:Method) | 1990-08-02 |
| AU504739B2 (en) | 1979-10-25 |
| IL52003A0 (en) | 1977-07-31 |
| JPS5393184A (en) | 1978-08-15 |
| JPS597677B2 (ja) | 1984-02-20 |
| NL7705641A (nl) | 1978-07-26 |
| NL189616B (nl) | 1993-01-04 |
| NL189616C (nl) | 1993-06-01 |
| DE2730162A1 (de) | 1978-07-27 |
| FR2377840A1 (fr) | 1978-08-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |