CA1078948A - Method of fabricating silicon photodiodes - Google Patents

Method of fabricating silicon photodiodes

Info

Publication number
CA1078948A
CA1078948A CA281,617A CA281617A CA1078948A CA 1078948 A CA1078948 A CA 1078948A CA 281617 A CA281617 A CA 281617A CA 1078948 A CA1078948 A CA 1078948A
Authority
CA
Canada
Prior art keywords
layer
forming
guard ring
channel stop
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA281,617A
Other languages
English (en)
French (fr)
Inventor
Adrian R. Hartman
Hans Melchior
David P. Schinke
Richard G. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/793,493 external-priority patent/US4127932A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1078948A publication Critical patent/CA1078948A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

Landscapes

  • Light Receiving Elements (AREA)
CA281,617A 1976-08-06 1977-06-28 Method of fabricating silicon photodiodes Expired CA1078948A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71239276A 1976-08-06 1976-08-06
US05/793,493 US4127932A (en) 1976-08-06 1977-05-04 Method of fabricating silicon photodiodes

Publications (1)

Publication Number Publication Date
CA1078948A true CA1078948A (en) 1980-06-03

Family

ID=27108828

Family Applications (1)

Application Number Title Priority Date Filing Date
CA281,617A Expired CA1078948A (en) 1976-08-06 1977-06-28 Method of fabricating silicon photodiodes

Country Status (5)

Country Link
JP (1) JPS5341193A (online.php)
CA (1) CA1078948A (online.php)
DE (1) DE2734726C2 (online.php)
FR (1) FR2360998A1 (online.php)
GB (1) GB1561953A (online.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7893515B2 (en) 2000-11-13 2011-02-22 Sony Corporation Photodetector integrated chip

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3001899A1 (de) * 1980-01-19 1981-07-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Planar-fototransistor
JPS5789271A (en) * 1980-11-25 1982-06-03 Moririka:Kk Compound semiconductor element
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
US4616247A (en) * 1983-11-10 1986-10-07 At&T Bell Laboratories P-I-N and avalanche photodiodes
CA1301895C (en) * 1989-01-12 1992-05-26 Robert J. Mcintyre Silicon avalanche photodiode with low multiplication noise
CN114975672B (zh) * 2021-02-26 2024-10-22 中国科学院半导体研究所 背入射近红外增强硅雪崩光电探测器的结构及制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3244567A (en) * 1962-09-10 1966-04-05 Trw Semiconductors Inc Impurity diffusion method
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS49116957A (online.php) * 1972-10-25 1974-11-08
JPS5031777A (online.php) * 1973-07-21 1975-03-28

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7893515B2 (en) 2000-11-13 2011-02-22 Sony Corporation Photodetector integrated chip
US8664031B2 (en) 2000-11-13 2014-03-04 Sony Corporation Method of manufacturing photodiode intergrated chip

Also Published As

Publication number Publication date
JPS5341193A (en) 1978-04-14
DE2734726A1 (de) 1978-02-09
JPS6155791B2 (online.php) 1986-11-29
GB1561953A (en) 1980-03-05
FR2360998A1 (fr) 1978-03-03
FR2360998B1 (online.php) 1982-04-09
DE2734726C2 (de) 1987-04-16

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