CA1069188A - Planar transmission line comprising a material having negative differential conductivity - Google Patents
Planar transmission line comprising a material having negative differential conductivityInfo
- Publication number
- CA1069188A CA1069188A CA228,200A CA228200A CA1069188A CA 1069188 A CA1069188 A CA 1069188A CA 228200 A CA228200 A CA 228200A CA 1069188 A CA1069188 A CA 1069188A
- Authority
- CA
- Canada
- Prior art keywords
- gunn
- transmission line
- layer
- planar transmission
- center conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 56
- 239000000463 material Substances 0.000 title description 20
- 239000004020 conductor Substances 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- 239000002019 doping agent Substances 0.000 claims abstract description 10
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 229910000927 Ge alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 17
- 230000015572 biosynthetic process Effects 0.000 abstract description 11
- 230000010355 oscillation Effects 0.000 abstract description 9
- 230000001902 propagating effect Effects 0.000 abstract description 2
- 230000003321 amplification Effects 0.000 description 16
- 238000003199 nucleic acid amplification method Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000005755 formation reaction Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000001419 dependent effect Effects 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241001663154 Electron Species 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- -1 n-type GaAs Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
Landscapes
- Microwave Amplifiers (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Waveguides (AREA)
- Cable Transmission Systems, Equalization Of Radio And Reduction Of Echo (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51257474A | 1974-10-07 | 1974-10-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1069188A true CA1069188A (en) | 1980-01-01 |
Family
ID=24039673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA228,200A Expired CA1069188A (en) | 1974-10-07 | 1975-06-02 | Planar transmission line comprising a material having negative differential conductivity |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5143615A (sv) |
| CA (1) | CA1069188A (sv) |
| DE (1) | DE2528342A1 (sv) |
| FR (1) | FR2287779A1 (sv) |
| GB (1) | GB1514803A (sv) |
| IT (1) | IT1044511B (sv) |
| NL (1) | NL7507823A (sv) |
| SE (1) | SE405303B (sv) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125617B (en) * | 1982-08-06 | 1985-11-20 | Standard Telephones Cables Ltd | Negative effective mass device |
| US4947142A (en) * | 1987-12-23 | 1990-08-07 | Reza Tayrani | Attenuation controlling by means of a monolithic device |
| JP4108817B2 (ja) * | 1998-03-20 | 2008-06-25 | 富士通株式会社 | マイクロ波・ミリ波回路装置とその製造方法 |
-
1975
- 1975-06-02 CA CA228,200A patent/CA1069188A/en not_active Expired
- 1975-06-03 SE SE7506337A patent/SE405303B/sv unknown
- 1975-06-04 GB GB24031/75A patent/GB1514803A/en not_active Expired
- 1975-06-24 JP JP50077083A patent/JPS5143615A/ja active Pending
- 1975-06-25 DE DE19752528342 patent/DE2528342A1/de not_active Ceased
- 1975-06-30 IT IT68671/75A patent/IT1044511B/it active
- 1975-07-01 NL NL7507823A patent/NL7507823A/xx not_active Application Discontinuation
- 1975-07-02 FR FR7520834A patent/FR2287779A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB1514803A (en) | 1978-06-21 |
| SE405303B (sv) | 1978-11-27 |
| FR2287779A1 (fr) | 1976-05-07 |
| NL7507823A (nl) | 1976-04-09 |
| JPS5143615A (en) | 1976-04-14 |
| DE2528342A1 (de) | 1976-04-08 |
| SE7506337L (sv) | 1976-04-08 |
| IT1044511B (it) | 1980-03-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |