GB2125617B - Negative effective mass device - Google Patents
Negative effective mass deviceInfo
- Publication number
- GB2125617B GB2125617B GB08222787A GB8222787A GB2125617B GB 2125617 B GB2125617 B GB 2125617B GB 08222787 A GB08222787 A GB 08222787A GB 8222787 A GB8222787 A GB 8222787A GB 2125617 B GB2125617 B GB 2125617B
- Authority
- GB
- United Kingdom
- Prior art keywords
- effective mass
- mass device
- negative effective
- negative
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08222787A GB2125617B (en) | 1982-08-06 | 1982-08-06 | Negative effective mass device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08222787A GB2125617B (en) | 1982-08-06 | 1982-08-06 | Negative effective mass device |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2125617A GB2125617A (en) | 1984-03-07 |
GB2125617B true GB2125617B (en) | 1985-11-20 |
Family
ID=10532174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08222787A Expired GB2125617B (en) | 1982-08-06 | 1982-08-06 | Negative effective mass device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2125617B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107723789B (en) * | 2017-09-27 | 2020-05-12 | 南京大学 | Low-temperature epitaxial preparation method of high-quality gray tin single crystal film |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3215862A (en) * | 1963-01-10 | 1965-11-02 | Ibm | Semiconductor element in which negative resistance characteristics are produced throughout the bulk of said element |
US3480879A (en) * | 1968-01-04 | 1969-11-25 | Ibm | Bulk oscillator using strained semiconductor |
BE789413A (en) * | 1971-09-28 | 1973-03-28 | Siemens Ag | GUNN EFFECT OSCILLATOR WITH TRANSISTOR |
CA1069188A (en) * | 1974-10-07 | 1980-01-01 | Paul L. Fleming | Planar transmission line comprising a material having negative differential conductivity |
-
1982
- 1982-08-06 GB GB08222787A patent/GB2125617B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2125617A (en) | 1984-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |