CA1059882A - Gaseous plasma etching of aluminum and aluminum oxide - Google Patents

Gaseous plasma etching of aluminum and aluminum oxide

Info

Publication number
CA1059882A
CA1059882A CA259,126A CA259126A CA1059882A CA 1059882 A CA1059882 A CA 1059882A CA 259126 A CA259126 A CA 259126A CA 1059882 A CA1059882 A CA 1059882A
Authority
CA
Canada
Prior art keywords
aluminum
etching
gaseous
layer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA259,126A
Other languages
English (en)
French (fr)
Inventor
Sidney I.J. Ingrey
Robert G. Poulsen
Heinz J. Nentwich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=4106655&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA1059882(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to CA259,126A priority Critical patent/CA1059882A/en
Priority to GB24546/77A priority patent/GB1554335A/en
Priority to NL7706627A priority patent/NL7706627A/xx
Priority to DE2730156A priority patent/DE2730156C2/de
Priority to JP9230477A priority patent/JPS5322836A/ja
Priority to SE7709165A priority patent/SE7709165L/xx
Priority to FR7725071A priority patent/FR2362216A1/fr
Application granted granted Critical
Publication of CA1059882A publication Critical patent/CA1059882A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CA259,126A 1976-08-16 1976-08-16 Gaseous plasma etching of aluminum and aluminum oxide Expired CA1059882A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CA259,126A CA1059882A (en) 1976-08-16 1976-08-16 Gaseous plasma etching of aluminum and aluminum oxide
GB24546/77A GB1554335A (en) 1976-08-16 1977-06-13 Gaseous plasma etching of aluminium and aluminium oxide
NL7706627A NL7706627A (nl) 1976-08-16 1977-06-16 Werkwijze voor het met een gasplasma etsen van aluminium en aluminiumoxyde.
DE2730156A DE2730156C2 (de) 1976-08-16 1977-07-04 Gas-Plasma-Ätzung von Aluminium und Aluminiumoxid
JP9230477A JPS5322836A (en) 1976-08-16 1977-08-02 Method of etching aluminum and aluminum oxide with gas
SE7709165A SE7709165L (sv) 1976-08-16 1977-08-12 Gasetsning av aluminium och aluminiumoxid
FR7725071A FR2362216A1 (fr) 1976-08-16 1977-08-16 Procede d'attaque par plasma gazeux de l'aluminium et de l'oxyde d'aluminium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA259,126A CA1059882A (en) 1976-08-16 1976-08-16 Gaseous plasma etching of aluminum and aluminum oxide

Publications (1)

Publication Number Publication Date
CA1059882A true CA1059882A (en) 1979-08-07

Family

ID=4106655

Family Applications (1)

Application Number Title Priority Date Filing Date
CA259,126A Expired CA1059882A (en) 1976-08-16 1976-08-16 Gaseous plasma etching of aluminum and aluminum oxide

Country Status (7)

Country Link
JP (1) JPS5322836A (cg-RX-API-DMAC7.html)
CA (1) CA1059882A (cg-RX-API-DMAC7.html)
DE (1) DE2730156C2 (cg-RX-API-DMAC7.html)
FR (1) FR2362216A1 (cg-RX-API-DMAC7.html)
GB (1) GB1554335A (cg-RX-API-DMAC7.html)
NL (1) NL7706627A (cg-RX-API-DMAC7.html)
SE (1) SE7709165L (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9520303B2 (en) * 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118172A (en) * 1978-03-06 1979-09-13 Nichiden Varian Kk Method of dry etching aluminum
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
DE2924475A1 (de) * 1979-06-18 1981-01-15 Siemens Ag Verfahren zum herstellen einer metallisierung auf einem halbleiterkristall
JPS5623745A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Plasma etching device
US4341593A (en) * 1979-08-17 1982-07-27 Tokuda Seisakusyo, Ltd. Plasma etching method for aluminum-based films
JPS5747876A (en) * 1980-09-03 1982-03-18 Toshiba Corp Plasma etching apparatus and method
DE3103177A1 (de) * 1981-01-30 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4426246A (en) * 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
JP2861785B2 (ja) * 1994-02-15 1999-02-24 日本電気株式会社 半導体装置の配線の形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3757733A (en) * 1971-10-27 1973-09-11 Texas Instruments Inc Radial flow reactor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9520303B2 (en) * 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch

Also Published As

Publication number Publication date
FR2362216A1 (fr) 1978-03-17
DE2730156A1 (de) 1978-02-23
JPS5745310B2 (cg-RX-API-DMAC7.html) 1982-09-27
GB1554335A (en) 1979-10-17
NL7706627A (nl) 1978-02-20
DE2730156C2 (de) 1986-01-16
JPS5322836A (en) 1978-03-02
SE7709165L (sv) 1978-02-17

Similar Documents

Publication Publication Date Title
US4030967A (en) Gaseous plasma etching of aluminum and aluminum oxide
CA1124207A (en) Device fabrication by plasma etching with lessened loading effect
CA1059882A (en) Gaseous plasma etching of aluminum and aluminum oxide
CA1121306A (en) Device fabrication by plasma etching of aluminum rich surfaces
US4073669A (en) Plasma etching
US4182646A (en) Process of etching with plasma etch gas
CA1136525A (en) Dry etching of metal film
US7464717B2 (en) Method for cleaning a CVD chamber
US3951709A (en) Process and material for semiconductor photomask fabrication
JPS6352118B2 (cg-RX-API-DMAC7.html)
US4174251A (en) Method of selective gas etching on a silicon nitride layer
JPH0336300B2 (cg-RX-API-DMAC7.html)
CA1120888A (en) Glow discharge etching process for chromium
EP0507183A2 (en) Process for selective deposition of a polymer coating
JPS5814507B2 (ja) シリコンを選択的にイオン食刻する方法
US5897377A (en) Semiconductor device manufacturing method with use of gas including acyl-group-containing compound
JP2882339B2 (ja) タングステンｃｖｄ反応室内のエッチング方法
JPH11140675A (ja) 真空チャンバーのクリーニング方法
JPS6032716B2 (ja) 半導体装置の微細回路形成方法
JPH0429221B2 (cg-RX-API-DMAC7.html)
GB2171360A (en) Etching aluminum/copper alloy films
JPH09275092A (ja) プラズマ処理装置
Bruce et al. High rate anisotropic etching
JPH0336908B2 (cg-RX-API-DMAC7.html)
Lehmann et al. Reactive sputter etching of Al in BCl3