CA1044355A - Electrically pumped, solid-state distributed feedback laser - Google Patents
Electrically pumped, solid-state distributed feedback laserInfo
- Publication number
- CA1044355A CA1044355A CA229,183A CA229183A CA1044355A CA 1044355 A CA1044355 A CA 1044355A CA 229183 A CA229183 A CA 229183A CA 1044355 A CA1044355 A CA 1044355A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- active region
- region layer
- layers
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000737 periodic effect Effects 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000001427 coherent effect Effects 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 27
- 230000005855 radiation Effects 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 8
- 230000006798 recombination Effects 0.000 claims description 6
- 238000005215 recombination Methods 0.000 claims description 6
- 230000008713 feedback mechanism Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 4
- 230000003993 interaction Effects 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 238000005086 pumping Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- RHKSESDHCKYTHI-UHFFFAOYSA-N 12006-40-5 Chemical compound [Zn].[As]=[Zn].[As]=[Zn] RHKSESDHCKYTHI-UHFFFAOYSA-N 0.000 description 1
- -1 Argon ions Chemical class 0.000 description 1
- 206010013710 Drug interaction Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002674 ointment Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49967174A | 1974-08-22 | 1974-08-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1044355A true CA1044355A (en) | 1978-12-12 |
Family
ID=23986216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA229,183A Expired CA1044355A (en) | 1974-08-22 | 1975-06-12 | Electrically pumped, solid-state distributed feedback laser |
Country Status (12)
| Country | Link |
|---|---|
| JP (1) | JPS5146092A (OSRAM) |
| AU (1) | AU497635B2 (OSRAM) |
| BE (1) | BE832000A (OSRAM) |
| BR (1) | BR7504352A (OSRAM) |
| CA (1) | CA1044355A (OSRAM) |
| DE (1) | DE2534978A1 (OSRAM) |
| ES (1) | ES440361A1 (OSRAM) |
| FR (1) | FR2282731A1 (OSRAM) |
| GB (1) | GB1513573A (OSRAM) |
| IT (1) | IT1041853B (OSRAM) |
| NL (1) | NL7509975A (OSRAM) |
| SE (1) | SE7508038L (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2418970A1 (fr) * | 1978-03-03 | 1979-09-28 | Thomson Csf | Diode laser a resonateur distribue |
| US4573163A (en) * | 1982-09-13 | 1986-02-25 | At&T Bell Laboratories | Longitudinal mode stabilized laser |
| EP0184250B1 (en) * | 1984-12-04 | 1992-09-02 | Koninklijke Philips Electronics N.V. | Electron-beam-pumped semiconductor laser and array |
| GB2203891A (en) * | 1987-04-21 | 1988-10-26 | Plessey Co Plc | Semiconductor diode laser array |
| US4872176A (en) * | 1988-04-25 | 1989-10-03 | General Electric Company | Device and method for monitoring a light-emitting device |
| JP2619057B2 (ja) * | 1989-05-22 | 1997-06-11 | 三菱電機株式会社 | 半導体レーザの製造方法 |
| DE69032067T2 (de) * | 1989-12-28 | 1998-06-18 | Koriyama Kasei Co Ltd | Verfahren zur reinigung von organozinn(iv)-polyhalogeniden |
-
1975
- 1975-05-13 GB GB20027/75A patent/GB1513573A/en not_active Expired
- 1975-06-12 CA CA229,183A patent/CA1044355A/en not_active Expired
- 1975-07-10 BR BR7504352*A patent/BR7504352A/pt unknown
- 1975-07-14 SE SE7508038A patent/SE7508038L/xx unknown
- 1975-07-25 FR FR7523294A patent/FR2282731A1/fr active Granted
- 1975-07-31 BE BE158843A patent/BE832000A/xx not_active IP Right Cessation
- 1975-08-05 DE DE19752534978 patent/DE2534978A1/de not_active Withdrawn
- 1975-08-08 AU AU83815/75A patent/AU497635B2/en not_active Expired
- 1975-08-15 JP JP50099437A patent/JPS5146092A/ja active Pending
- 1975-08-19 IT IT26416/75A patent/IT1041853B/it active
- 1975-08-20 ES ES440361A patent/ES440361A1/es not_active Expired
- 1975-08-22 NL NL7509975A patent/NL7509975A/xx not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| BR7504352A (pt) | 1976-07-06 |
| JPS5146092A (OSRAM) | 1976-04-20 |
| BE832000A (fr) | 1975-11-17 |
| FR2282731B1 (OSRAM) | 1979-05-11 |
| NL7509975A (nl) | 1976-02-24 |
| DE2534978A1 (de) | 1976-03-04 |
| AU8381575A (en) | 1977-02-10 |
| ES440361A1 (es) | 1977-06-01 |
| IT1041853B (it) | 1980-01-10 |
| GB1513573A (en) | 1978-06-07 |
| AU497635B2 (en) | 1978-12-21 |
| FR2282731A1 (fr) | 1976-03-19 |
| SE7508038L (sv) | 1976-02-23 |
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