BE832000A - Laser a reaction distribuee, a semi conducteur a pompage electrique - Google Patents

Laser a reaction distribuee, a semi conducteur a pompage electrique

Info

Publication number
BE832000A
BE832000A BE158843A BE158843A BE832000A BE 832000 A BE832000 A BE 832000A BE 158843 A BE158843 A BE 158843A BE 158843 A BE158843 A BE 158843A BE 832000 A BE832000 A BE 832000A
Authority
BE
Belgium
Prior art keywords
semi
laser
electrically pumped
conductive electrically
distributed reaction
Prior art date
Application number
BE158843A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE832000A publication Critical patent/BE832000A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
BE158843A 1974-08-22 1975-07-31 Laser a reaction distribuee, a semi conducteur a pompage electrique BE832000A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49967174A 1974-08-22 1974-08-22

Publications (1)

Publication Number Publication Date
BE832000A true BE832000A (fr) 1975-11-17

Family

ID=23986216

Family Applications (1)

Application Number Title Priority Date Filing Date
BE158843A BE832000A (fr) 1974-08-22 1975-07-31 Laser a reaction distribuee, a semi conducteur a pompage electrique

Country Status (12)

Country Link
JP (1) JPS5146092A (fr)
AU (1) AU497635B2 (fr)
BE (1) BE832000A (fr)
BR (1) BR7504352A (fr)
CA (1) CA1044355A (fr)
DE (1) DE2534978A1 (fr)
ES (1) ES440361A1 (fr)
FR (1) FR2282731A1 (fr)
GB (1) GB1513573A (fr)
IT (1) IT1041853B (fr)
NL (1) NL7509975A (fr)
SE (1) SE7508038L (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2418970A1 (fr) * 1978-03-03 1979-09-28 Thomson Csf Diode laser a resonateur distribue
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
EP0184250B1 (fr) * 1984-12-04 1992-09-02 Koninklijke Philips Electronics N.V. Laser à semi-conducteur pompé par un faisceau d'électrons et dispositif
GB2203891A (en) * 1987-04-21 1988-10-26 Plessey Co Plc Semiconductor diode laser array
US4872176A (en) * 1988-04-25 1989-10-03 General Electric Company Device and method for monitoring a light-emitting device
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
US5200540A (en) * 1989-12-28 1993-04-06 Koriyama Kasei Co., Ltd. Refining process of organic tin (iv) polyhalides

Also Published As

Publication number Publication date
CA1044355A (fr) 1978-12-12
JPS5146092A (fr) 1976-04-20
GB1513573A (en) 1978-06-07
FR2282731B1 (fr) 1979-05-11
AU8381575A (en) 1977-02-10
IT1041853B (it) 1980-01-10
AU497635B2 (en) 1978-12-21
BR7504352A (pt) 1976-07-06
SE7508038L (sv) 1976-02-23
DE2534978A1 (de) 1976-03-04
FR2282731A1 (fr) 1976-03-19
ES440361A1 (es) 1977-06-01
NL7509975A (nl) 1976-02-24

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: XEROX CORP.

Effective date: 19840731