CA1027188A - Montage de circuit de balayage - Google Patents

Montage de circuit de balayage

Info

Publication number
CA1027188A
CA1027188A CA227,325A CA227325A CA1027188A CA 1027188 A CA1027188 A CA 1027188A CA 227325 A CA227325 A CA 227325A CA 1027188 A CA1027188 A CA 1027188A
Authority
CA
Canada
Prior art keywords
circuit arrangement
scanning circuit
scanning
arrangement
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA227,325A
Other languages
English (en)
Inventor
Trevor L. Tansley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1027188A publication Critical patent/CA1027188A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electronic Switches (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA227,325A 1974-05-29 1975-05-20 Montage de circuit de balayage Expired CA1027188A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2386074A GB1476192A (en) 1974-05-29 1974-05-29 Semiconductor switching circuit arrangements

Publications (1)

Publication Number Publication Date
CA1027188A true CA1027188A (fr) 1978-02-28

Family

ID=10202505

Family Applications (1)

Application Number Title Priority Date Filing Date
CA227,325A Expired CA1027188A (fr) 1974-05-29 1975-05-20 Montage de circuit de balayage

Country Status (10)

Country Link
US (1) US3992639A (fr)
JP (1) JPS5337686B2 (fr)
BR (1) BR7503304A (fr)
CA (1) CA1027188A (fr)
DE (1) DE2521868A1 (fr)
FR (1) FR2273414A1 (fr)
GB (1) GB1476192A (fr)
IT (1) IT1038422B (fr)
NL (1) NL7506137A (fr)
SE (1) SE399498B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7406728A (nl) * 1974-05-20 1975-11-24 Philips Nv Halfgeleiderinrichting voor het digitaliseren van een elektrisch analoog signaal.
DE2606308C2 (de) * 1976-02-17 1985-05-23 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler optoelektronischer Halbleitersensor
US4191898A (en) * 1978-05-01 1980-03-04 Motorola, Inc. High voltage CMOS circuit
NL8303441A (nl) * 1983-10-07 1985-05-01 Philips Nv Geintegreerde schakeling met komplementaire veldeffekttransistors.
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
CA2189700C (fr) * 1995-12-27 2000-06-20 Alexander George Dickinson Souris combinee a un imageur sectoriel
US20190042395A1 (en) * 2018-09-28 2019-02-07 Intel Corporation Source code profiling through enhanced mapping

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3111556A (en) * 1961-09-25 1963-11-19 Servo Corp Of America Image pickup devices and scanning circuits therefor
US3378688A (en) * 1965-02-24 1968-04-16 Fairchild Camera Instr Co Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions
US3397325A (en) * 1965-12-30 1968-08-13 Rca Corp Sensor array coupling circuits
US3575610A (en) * 1967-09-20 1971-04-20 Nippon Electric Co Scanning pulse generator
GB1380427A (en) * 1970-12-07 1975-01-15 Hitachi Ltd Apparatus for scanning the signals applied to an array of semiconduc tor devices
US3763379A (en) * 1970-12-07 1973-10-02 Hitachi Ltd Semiconductor device for scanning digital signals
US3801883A (en) * 1972-06-02 1974-04-02 Gen Electric Surface charge signal correlator

Also Published As

Publication number Publication date
JPS513122A (fr) 1976-01-12
SE7505961L (sv) 1975-12-01
SE399498B (sv) 1978-02-13
DE2521868A1 (de) 1975-12-18
IT1038422B (it) 1979-11-20
NL7506137A (nl) 1975-12-02
GB1476192A (en) 1977-06-10
FR2273414A1 (fr) 1975-12-26
JPS5337686B2 (fr) 1978-10-11
BR7503304A (pt) 1976-04-27
US3992639A (en) 1976-11-16

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