CA1024267A - Bipolar transistor - Google Patents

Bipolar transistor

Info

Publication number
CA1024267A
CA1024267A CA222,356A CA222356A CA1024267A CA 1024267 A CA1024267 A CA 1024267A CA 222356 A CA222356 A CA 222356A CA 1024267 A CA1024267 A CA 1024267A
Authority
CA
Canada
Prior art keywords
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA222,356A
Other languages
English (en)
French (fr)
Other versions
CA222356S (en
Inventor
Edward C. Douglas
Charles W. Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1024267A publication Critical patent/CA1024267A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
CA222,356A 1974-05-02 1975-03-18 Bipolar transistor Expired CA1024267A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/466,287 US3943555A (en) 1974-05-02 1974-05-02 SOS Bipolar transistor

Publications (1)

Publication Number Publication Date
CA1024267A true CA1024267A (en) 1978-01-10

Family

ID=23851202

Family Applications (1)

Application Number Title Priority Date Filing Date
CA222,356A Expired CA1024267A (en) 1974-05-02 1975-03-18 Bipolar transistor

Country Status (13)

Country Link
US (1) US3943555A (enExample)
JP (1) JPS5133569A (enExample)
BE (1) BE824887A (enExample)
BR (1) BR7502515A (enExample)
CA (1) CA1024267A (enExample)
CH (1) CH591162A5 (enExample)
DE (1) DE2502547A1 (enExample)
FR (1) FR2269791A1 (enExample)
GB (1) GB1494151A (enExample)
IN (1) IN143903B (enExample)
IT (1) IT1028325B (enExample)
NL (1) NL7416779A (enExample)
SE (1) SE402378B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3994012A (en) * 1975-05-07 1976-11-23 The Regents Of The University Of Minnesota Photovoltaic semi-conductor devices
DE2529951A1 (de) * 1975-07-04 1977-01-27 Siemens Ag Lateraler, bipolarer transistor
DD154049A1 (de) * 1980-10-30 1982-02-17 Siegfried Wagner Steuerbares halbleiterbauelement
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4575746A (en) * 1983-11-28 1986-03-11 Rca Corporation Crossunders for high density SOS integrated circuits
US4792837A (en) * 1986-02-26 1988-12-20 Ge Solid State Patents, Inc. Orthogonal bipolar transistor
JP2503460B2 (ja) * 1986-12-01 1996-06-05 三菱電機株式会社 バイポ−ラトランジスタおよびその製造方法
JPS63312674A (ja) * 1987-06-16 1988-12-21 Nissan Motor Co Ltd 薄膜半導体装置
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
USH1637H (en) * 1991-09-18 1997-03-04 Offord; Bruce W. Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS)
US5374567A (en) * 1993-05-20 1994-12-20 The United States Of America As Represented By The Secretary Of The Navy Operational amplifier using bipolar junction transistors in silicon-on-sapphire
DE4418206C2 (de) * 1994-05-25 1999-01-14 Siemens Ag CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben
US5894152A (en) * 1997-06-18 1999-04-13 International Business Machines Corporation SOI/bulk hybrid substrate and method of forming the same
US6404038B1 (en) 2000-03-02 2002-06-11 The United States Of America As Represented By The Secretary Of The Navy Complementary vertical bipolar junction transistors fabricated of silicon-on-sapphire utilizing wide base PNP transistors
US8026572B2 (en) * 2006-12-06 2011-09-27 Denso Corporation Semiconductor device and method for manufacturing same
CN112599534A (zh) * 2020-12-08 2021-04-02 深圳市华星光电半导体显示技术有限公司 一种背板组件、制程方法和显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3486892A (en) * 1966-01-13 1969-12-30 Raytheon Co Preferential etching technique
NL6813833A (enExample) * 1968-09-27 1970-04-01
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
US3660732A (en) * 1971-02-08 1972-05-02 Signetics Corp Semiconductor structure with dielectric and air isolation and method
JPS4924583A (enExample) * 1972-06-28 1974-03-05
US3890632A (en) * 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same

Also Published As

Publication number Publication date
SE402378B (sv) 1978-06-26
AU7633374A (en) 1976-06-17
DE2502547A1 (de) 1975-11-13
IN143903B (enExample) 1978-02-25
GB1494151A (en) 1977-12-07
US3943555A (en) 1976-03-09
BR7502515A (pt) 1976-03-16
BE824887A (fr) 1975-05-15
NL7416779A (nl) 1975-11-04
SE7501090L (sv) 1975-11-03
JPS5133569A (en) 1976-03-22
CH591162A5 (enExample) 1977-09-15
FR2269791A1 (enExample) 1975-11-28
IT1028325B (it) 1979-01-30

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