CA1024221A - Circuit amplificateur a semiconducteurs - Google Patents

Circuit amplificateur a semiconducteurs

Info

Publication number
CA1024221A
CA1024221A CA197,711A CA197711A CA1024221A CA 1024221 A CA1024221 A CA 1024221A CA 197711 A CA197711 A CA 197711A CA 1024221 A CA1024221 A CA 1024221A
Authority
CA
Canada
Prior art keywords
solid state
circuit therefor
state amplifier
amplifier
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA197,711A
Other languages
English (en)
Other versions
CA197711S (en
Inventor
Melvin P. Shaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of CA1024221A publication Critical patent/CA1024221A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Bipolar Transistors (AREA)
CA197,711A 1973-04-26 1974-04-17 Circuit amplificateur a semiconducteurs Expired CA1024221A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35468773A 1973-04-26 1973-04-26

Publications (1)

Publication Number Publication Date
CA1024221A true CA1024221A (fr) 1978-01-10

Family

ID=23394490

Family Applications (1)

Application Number Title Priority Date Filing Date
CA197,711A Expired CA1024221A (fr) 1973-04-26 1974-04-17 Circuit amplificateur a semiconducteurs

Country Status (8)

Country Link
US (1) US4015282A (fr)
JP (1) JPS579517B2 (fr)
CA (1) CA1024221A (fr)
DE (1) DE2417248A1 (fr)
FR (1) FR2227643B1 (fr)
GB (1) GB1469814A (fr)
IT (1) IT1014609B (fr)
NL (1) NL7405351A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1522327A (en) * 1974-11-14 1978-08-23 Energy Conversion Devices Inc Solid state circuit
US4160986A (en) * 1976-08-02 1979-07-10 Johnson David M Bipolar transistors having fixed gain characteristics
JPS5683050A (en) * 1979-12-12 1981-07-07 Toshiba Corp Semiconductor device
WO1985003599A1 (fr) * 1984-02-09 1985-08-15 Ncr Corporation Cellule de memoire morte programmable et son procede de fabrication
NL8501769A (nl) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan.
GB8623177D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
GB8623176D0 (en) * 1986-09-26 1987-01-14 Raychem Ltd Circuit protection device
DE4002431A1 (de) * 1990-01-27 1991-08-01 Philips Patentverwaltung Sensormatrix
US6969867B2 (en) * 2003-03-10 2005-11-29 Energy Conversion Devices, Inc. Field effect chalcogenide devices
US7529123B2 (en) * 2003-09-08 2009-05-05 Ovonyx, Inc. Method of operating a multi-terminal electronic device
US7074707B2 (en) * 2003-09-15 2006-07-11 International Business Machines Corporation Method of fabricating a connection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL298324A (fr) * 1962-09-28 1900-01-01
US3656032A (en) * 1969-09-22 1972-04-11 Energy Conversion Devices Inc Controllable semiconductor switch
US3748501A (en) * 1971-04-30 1973-07-24 Energy Conversion Devices Inc Multi-terminal amorphous electronic control device
US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors

Also Published As

Publication number Publication date
FR2227643A1 (fr) 1974-11-22
NL7405351A (fr) 1974-10-29
JPS5015484A (fr) 1975-02-18
US4015282A (en) 1977-03-29
DE2417248A1 (de) 1974-11-21
JPS579517B2 (fr) 1982-02-22
FR2227643B1 (fr) 1982-09-03
GB1469814A (en) 1977-04-06
IT1014609B (it) 1977-04-30

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