CA1023011A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
CA1023011A
CA1023011A CA216,024A CA216024A CA1023011A CA 1023011 A CA1023011 A CA 1023011A CA 216024 A CA216024 A CA 216024A CA 1023011 A CA1023011 A CA 1023011A
Authority
CA
Canada
Prior art keywords
integrated circuits
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA216,024A
Other languages
English (en)
French (fr)
Other versions
CA216024S (en
Inventor
Alan W. Sinclair
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA1023011A publication Critical patent/CA1023011A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/289—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable of the master-slave type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Shift Register Type Memory (AREA)
CA216,024A 1973-12-21 1974-12-12 Integrated circuits Expired CA1023011A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB59462/73A GB1494481A (en) 1973-12-21 1973-12-21 Electrical circuits comprising master/slave bistable arrangements

Publications (1)

Publication Number Publication Date
CA1023011A true CA1023011A (en) 1977-12-20

Family

ID=10483808

Family Applications (1)

Application Number Title Priority Date Filing Date
CA216,024A Expired CA1023011A (en) 1973-12-21 1974-12-12 Integrated circuits

Country Status (8)

Country Link
US (1) US3993918A (de)
JP (1) JPS5317853B2 (de)
AU (1) AU498031B2 (de)
CA (1) CA1023011A (de)
DE (1) DE2459562B2 (de)
FR (1) FR2255709B1 (de)
GB (1) GB1494481A (de)
IT (1) IT1027799B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2442773C3 (de) * 1974-09-06 1978-12-14 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Master-Slave-Flipflopschaltung
JPS597245B2 (ja) * 1975-12-01 1984-02-17 株式会社東芝 ハンドウタイロンリカイロ
NL7606193A (nl) * 1976-06-09 1977-12-13 Philips Nv Geintegreerde schakeling.
FR2356314A1 (fr) * 1976-06-22 1978-01-20 Radiotechnique Compelec Circuit integre logique a effet de seuil avec hysteresis
US4197470A (en) * 1976-07-15 1980-04-08 Texas Instruments Incorporated Triggerable flip-flop
US4150392A (en) * 1976-07-31 1979-04-17 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors
NL7612222A (nl) * 1976-11-04 1978-05-08 Philips Nv Geintegreerde schakeling.
US4072869A (en) * 1976-12-10 1978-02-07 Ncr Corporation Hazard-free clocked master/slave flip-flop
US4160173A (en) * 1976-12-14 1979-07-03 Tokyo Shibaura Electric Co., Ltd. Logic circuit with two pairs of cross-coupled nand/nor gates
US4085341A (en) * 1976-12-20 1978-04-18 Motorola, Inc. Integrated injection logic circuit having reduced delay
FR2404962A1 (fr) * 1977-09-28 1979-04-27 Ibm France Dispositif semi-conducteur du genre cellule bistable en technologie a injection de courant, commandee par l'injecteur
US4163244A (en) * 1977-10-28 1979-07-31 General Electric Company Symmetrical integrated injection logic circuit
DE2805217C3 (de) * 1978-02-08 1980-11-20 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte I2 L-Schaltung fur ein Zweiphasen-Schieberegister
US4200811A (en) * 1978-05-11 1980-04-29 Rca Corporation Frequency divider circuit
JPS5570133A (en) * 1978-11-21 1980-05-27 Toshiba Corp Divider circuit
FR2458951A1 (fr) * 1979-06-12 1981-01-02 Thomson Csf Procede pour decaler les seuils integres a operateurs logiques inegres a injection
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
BR8008718A (pt) * 1979-07-19 1981-06-09 Motorola Inc Circuito bi-estavel e registro de deslocamento que usa circuito logico de injecao integrado
DE2943565C2 (de) * 1979-10-29 1981-11-12 Ibm Deutschland Gmbh, 7000 Stuttgart Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik
FR2469049A1 (fr) * 1979-10-30 1981-05-08 Ibm France Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
US4491745A (en) * 1982-08-12 1985-01-01 Motorola, Inc. TTL flip-flop with clamping diode for eliminating race conditions
US4591737A (en) * 1982-12-13 1986-05-27 Advanced Micro Devices, Inc. Master-slave multivibrator with improved metastable response characteristic
US4604534A (en) * 1984-12-03 1986-08-05 International Business Machines Corporation Highly sensitive high performance sense amplifiers
EP0413038B1 (de) * 1989-08-16 1994-09-21 Deutsche ITT Industries GmbH Zweiphasengesteuertes Schieberegister in Bipolartechnik
US20040050135A1 (en) * 2002-09-18 2004-03-18 Launius William E. Axle straightening press
US7836740B2 (en) * 2002-09-18 2010-11-23 Launius Jr William E Axle straightening press

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440449A (en) * 1966-12-07 1969-04-22 Motorola Inc Gated dc coupled j-k flip-flop
US3591856A (en) * 1967-11-07 1971-07-06 Texas Instruments Inc J-k master-slave flip-flop

Also Published As

Publication number Publication date
JPS50107846A (de) 1975-08-25
FR2255709A1 (de) 1975-07-18
AU498031B2 (en) 1979-02-01
DE2459562A1 (de) 1975-07-03
GB1494481A (en) 1977-12-07
FR2255709B1 (de) 1978-03-24
IT1027799B (it) 1978-12-20
AU7667774A (en) 1976-06-24
DE2459562B2 (de) 1979-11-29
JPS5317853B2 (de) 1978-06-12
US3993918A (en) 1976-11-23

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