CA1019442A - Charge coupled random access memory using semiconductor bit line - Google Patents

Charge coupled random access memory using semiconductor bit line

Info

Publication number
CA1019442A
CA1019442A CA131,550A CA131550A CA1019442A CA 1019442 A CA1019442 A CA 1019442A CA 131550 A CA131550 A CA 131550A CA 1019442 A CA1019442 A CA 1019442A
Authority
CA
Canada
Prior art keywords
random access
bit line
access memory
charge coupled
semiconductor bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA131,550A
Other languages
English (en)
Other versions
CA131550S (en
Inventor
Joseph R. Burns
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Priority to CA270,119A priority Critical patent/CA1021460A/en
Priority to CA270,120A priority patent/CA1024256A/en
Priority to CA270,118A priority patent/CA1021459A/en
Priority to CA270,121A priority patent/CA1021461A/en
Application granted granted Critical
Publication of CA1019442A publication Critical patent/CA1019442A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA131,550A 1971-01-14 1971-12-31 Charge coupled random access memory using semiconductor bit line Expired CA1019442A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA270,119A CA1021460A (en) 1971-01-14 1977-01-20 Charge coupled memory coupled with optical memory
CA270,120A CA1024256A (en) 1971-01-14 1977-01-20 Charge coupled random access memory with semiconductor bit line
CA270,118A CA1021459A (en) 1971-01-14 1977-01-20 Charge coupled random access memory using semiconductor bit line
CA270,121A CA1021461A (en) 1971-01-14 1977-01-20 Charge coupled random access memory using semiconductor bit line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10635771A 1971-01-14 1971-01-14

Publications (1)

Publication Number Publication Date
CA1019442A true CA1019442A (en) 1977-10-18

Family

ID=22310962

Family Applications (1)

Application Number Title Priority Date Filing Date
CA131,550A Expired CA1019442A (en) 1971-01-14 1971-12-31 Charge coupled random access memory using semiconductor bit line

Country Status (9)

Country Link
JP (1) JPS525232B1 (en:Method)
AU (1) AU459676B2 (en:Method)
CA (1) CA1019442A (en:Method)
DE (1) DE2201109B2 (en:Method)
FR (1) FR2121869B1 (en:Method)
GB (1) GB1374042A (en:Method)
IT (1) IT946551B (en:Method)
NL (1) NL183153C (en:Method)
SE (1) SE381942B (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4051505A (en) * 1973-03-16 1977-09-27 Bell Telephone Laboratories, Incorporated Two-dimensional transfer in charge transfer device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Also Published As

Publication number Publication date
JPS525232B1 (en:Method) 1977-02-10
DE2201109C3 (en:Method) 1980-08-14
AU3766772A (en) 1973-07-12
IT946551B (it) 1973-05-21
DE2201109A1 (de) 1972-08-03
DE2201109B2 (de) 1979-11-08
NL183153C (nl) 1988-08-01
NL7200520A (en:Method) 1972-07-18
NL183153B (nl) 1988-03-01
GB1374042A (en) 1974-11-13
FR2121869B1 (en:Method) 1976-10-29
FR2121869A1 (en:Method) 1972-08-25
AU459676B2 (en) 1975-04-10
SE381942B (sv) 1975-12-22

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