Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
  • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
  • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
  • H01L29/42312—Gate electrodes for field effect devices
  • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Solid State Image Pick-Up Elements (AREA)
• Transforming Light Signals Into Electric Signals (AREA)
• Shift Register Type Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=5822911

Family Applications (1)

Country Status (9)

Family Cites Families (1)

• 1971
  • 1971-10-20 DE DE19712152293 patent/DE2152293A1/en not_active Withdrawn
• 1972
  • 1972-09-12 CH CH1333072A patent/CH570046A5/xx not_active IP Right Cessation
  • 1972-10-05 GB GB4585172A patent/GB1359626A/en not_active Expired
  • 1972-10-05 NL NL7213510A patent/NL7213510A/xx unknown
  • 1972-10-17 FR FR7236689A patent/FR2156747B1/fr not_active Expired
  • 1972-10-18 IT IT30608/72A patent/IT969649B/en active
  • 1972-10-19 CA CA154,267A patent/CA1015060A/en not_active Expired
  • 1972-10-20 SE SE7213599A patent/SE396153B/en unknown
  • 1972-10-20 JP JP47105209A patent/JPS4850678A/ja active Pending

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