CA1014276A - Planar unijunction transistor - Google Patents

Planar unijunction transistor

Info

Publication number
CA1014276A
CA1014276A CA215,028A CA215028A CA1014276A CA 1014276 A CA1014276 A CA 1014276A CA 215028 A CA215028 A CA 215028A CA 1014276 A CA1014276 A CA 1014276A
Authority
CA
Canada
Prior art keywords
planar
unijunction transistor
unijunction
transistor
planar unijunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA215,028A
Other languages
English (en)
Other versions
CA215028S (en
Inventor
Clifford O. Hull (Jr.)
Leland F. Leinweber
William H. Sahm (Iii)
James W. Sprague
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of CA1014276A publication Critical patent/CA1014276A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
CA215,028A 1974-01-07 1974-12-02 Planar unijunction transistor Expired CA1014276A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US431055A US3911463A (en) 1974-01-07 1974-01-07 Planar unijunction transistor

Publications (1)

Publication Number Publication Date
CA1014276A true CA1014276A (en) 1977-07-19

Family

ID=23710251

Family Applications (1)

Application Number Title Priority Date Filing Date
CA215,028A Expired CA1014276A (en) 1974-01-07 1974-12-02 Planar unijunction transistor

Country Status (6)

Country Link
US (1) US3911463A (cs)
JP (1) JPS5550392B2 (cs)
CA (1) CA1014276A (cs)
DE (1) DE2500235C2 (cs)
FR (1) FR2257149B1 (cs)
GB (1) GB1490881A (cs)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4292644A (en) * 1977-08-26 1981-09-29 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
US4136354A (en) * 1977-09-15 1979-01-23 National Semiconductor Corporation Power transistor including a sense emitter and a reference emitter for enabling power dissipation to be limited to less than a destructive level
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
US4608590A (en) * 1978-12-20 1986-08-26 At&T Bell Laboratories High voltage dielectrically isolated solid-state switch
CA1131800A (en) * 1978-12-20 1982-09-14 Bernard T. Murphy High voltage junction solid-state switch
US4602268A (en) * 1978-12-20 1986-07-22 At&T Bell Laboratories High voltage dielectrically isolated dual gate solid-state switch
CH659151A5 (de) * 1978-12-20 1986-12-31 Western Electric Co Festkoerperschalter mit einem halbleiterkoerper und schaltungsanordnung mit wenigstens zwei festkoerperschaltern.
US4230791A (en) * 1979-04-02 1980-10-28 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
DE3103444A1 (de) * 1981-02-02 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand
JPS58500427A (ja) * 1981-03-27 1983-03-17 ウエスタ−ン　エレクトリツク　カムパニ−，インコ−ポレ−テツド ゲ−テツド・ダイオ−ド・スイツチ
JPS59143823U (ja) * 1983-03-18 1984-09-26 本田技研工業株式会社 水冷式自動二輪車の冷却装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3436617A (en) * 1966-09-01 1969-04-01 Motorola Inc Semiconductor device
US3617828A (en) * 1969-09-24 1971-11-02 Gen Electric Semiconductor unijunction transistor device having a controlled cross-sectional area base contact region
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice

Also Published As

Publication number Publication date
FR2257149B1 (cs) 1979-09-28
US3911463A (en) 1975-10-07
DE2500235C2 (de) 1984-02-09
DE2500235A1 (de) 1975-07-17
JPS5550392B2 (cs) 1980-12-17
GB1490881A (en) 1977-11-02
FR2257149A1 (cs) 1975-08-01
JPS50107874A (cs) 1975-08-25

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