CA1012256A - Semiconductor controlled rectifier device - Google Patents

Semiconductor controlled rectifier device

Info

Publication number
CA1012256A
CA1012256A CA205,408A CA205408A CA1012256A CA 1012256 A CA1012256 A CA 1012256A CA 205408 A CA205408 A CA 205408A CA 1012256 A CA1012256 A CA 1012256A
Authority
CA
Canada
Prior art keywords
controlled rectifier
rectifier device
semiconductor controlled
semiconductor
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA205,408A
Other languages
English (en)
Inventor
Tsutomu Yatsuo
Katsumi Akabane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8582773A external-priority patent/JPS549871B2/ja
Priority claimed from JP9717173A external-priority patent/JPS5410234B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of CA1012256A publication Critical patent/CA1012256A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CA205,408A 1973-08-01 1974-07-23 Semiconductor controlled rectifier device Expired CA1012256A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8582773A JPS549871B2 (de) 1973-08-01 1973-08-01
JP9717173A JPS5410234B2 (de) 1973-08-31 1973-08-31

Publications (1)

Publication Number Publication Date
CA1012256A true CA1012256A (en) 1977-06-14

Family

ID=26426836

Family Applications (1)

Application Number Title Priority Date Filing Date
CA205,408A Expired CA1012256A (en) 1973-08-01 1974-07-23 Semiconductor controlled rectifier device

Country Status (3)

Country Link
US (1) US4028721A (de)
CA (1) CA1012256A (de)
DE (1) DE2436408C3 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
JPS5939909B2 (ja) * 1978-03-31 1984-09-27 株式会社東芝 半導体装置
US4577210A (en) * 1982-08-12 1986-03-18 International Rectifier Corporation Controlled rectifier having ring gate with internal protrusion for dV/dt control

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112301A (en) * 1964-07-27 1968-05-01 Gen Electric Controlled rectifier with improved turn-on and turn-off characteristics
CH447392A (de) * 1965-05-14 1967-11-30 Licentia Gmbh Gleichrichterschaltung
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
SE311701B (de) * 1966-07-07 1969-06-23 Asea Ab
US3489962A (en) * 1966-12-19 1970-01-13 Gen Electric Semiconductor switching device with emitter gate
US3440501A (en) * 1967-02-02 1969-04-22 Gen Electric Double-triggering semiconductor controlled rectifier
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3622845A (en) * 1969-05-01 1971-11-23 Gen Electric Scr with amplified emitter gate
US3836994A (en) * 1969-05-01 1974-09-17 Gen Electric Thyristor overvoltage protective element
JPS5021346B1 (de) * 1970-08-14 1975-07-22
JPS5619109B2 (de) * 1971-10-01 1981-05-06
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device

Also Published As

Publication number Publication date
US4028721A (en) 1977-06-07
DE2436408A1 (de) 1975-03-06
DE2436408B2 (de) 1977-11-24
DE2436408C3 (de) 1984-09-27

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