CA1001321A - Variable capacitance diodes employing a glossy amorphous material as an active layer and methods for their use - Google Patents

Variable capacitance diodes employing a glossy amorphous material as an active layer and methods for their use

Info

Publication number
CA1001321A
CA1001321A CA194,421A CA194421A CA1001321A CA 1001321 A CA1001321 A CA 1001321A CA 194421 A CA194421 A CA 194421A CA 1001321 A CA1001321 A CA 1001321A
Authority
CA
Canada
Prior art keywords
methods
active layer
variable capacitance
amorphous material
capacitance diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA194,421A
Other languages
English (en)
Inventor
Seymour Merrin
Jack K. Clifton
John S. Katsigianopoulos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INNOTECH Corp
Original Assignee
INNOTECH Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US342081A external-priority patent/US3911297A/en
Application filed by INNOTECH Corp filed Critical INNOTECH Corp
Application granted granted Critical
Publication of CA1001321A publication Critical patent/CA1001321A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/02—Details
    • H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
    • H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
    • H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Recrystallisation Techniques (AREA)
CA194,421A 1973-03-16 1974-03-08 Variable capacitance diodes employing a glossy amorphous material as an active layer and methods for their use Expired CA1001321A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34208273A 1973-03-16 1973-03-16
US342081A US3911297A (en) 1973-03-16 1973-03-16 Variable capacitance diodes employing a glassy amorphous material as an active layer and methods for their use

Publications (1)

Publication Number Publication Date
CA1001321A true CA1001321A (en) 1976-12-07

Family

ID=26992809

Family Applications (1)

Application Number Title Priority Date Filing Date
CA194,421A Expired CA1001321A (en) 1973-03-16 1974-03-08 Variable capacitance diodes employing a glossy amorphous material as an active layer and methods for their use

Country Status (5)

Country Link
JP (1) JPS5322036B2 (ja)
CA (1) CA1001321A (ja)
DE (1) DE2412629A1 (ja)
FR (1) FR2221816B1 (ja)
IL (1) IL44403A0 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02223181A (ja) * 1990-01-19 1990-09-05 Nichidou Denko Kk アース棒の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3040262A (en) * 1959-06-22 1962-06-19 Bell Telephone Labor Inc Light sensitive resonant circuit
FR1500945A (fr) * 1966-08-10 1967-11-10 Csf Système générateur de signaux images pour télévision
US3564353A (en) * 1969-04-16 1971-02-16 Westinghouse Electric Corp Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics

Also Published As

Publication number Publication date
JPS5322036B2 (ja) 1978-07-06
FR2221816A1 (ja) 1974-10-11
DE2412629A1 (de) 1974-09-26
FR2221816B1 (ja) 1977-09-30
JPS5027487A (ja) 1975-03-20
IL44403A0 (en) 1974-06-30

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