IL44403A0 - Variable capacitance diodes employing a glassy amorphous material as an active layer and methods for their use - Google Patents
Variable capacitance diodes employing a glassy amorphous material as an active layer and methods for their useInfo
- Publication number
- IL44403A0 IL44403A0 IL44403A IL4440374A IL44403A0 IL 44403 A0 IL44403 A0 IL 44403A0 IL 44403 A IL44403 A IL 44403A IL 4440374 A IL4440374 A IL 4440374A IL 44403 A0 IL44403 A0 IL 44403A0
- Authority
- IL
- Israel
- Prior art keywords
- methods
- active layer
- variable capacitance
- amorphous material
- capacitance diodes
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/02—Details
- H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
- H03J3/18—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance
- H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34208273A | 1973-03-16 | 1973-03-16 | |
US342081A US3911297A (en) | 1973-03-16 | 1973-03-16 | Variable capacitance diodes employing a glassy amorphous material as an active layer and methods for their use |
Publications (1)
Publication Number | Publication Date |
---|---|
IL44403A0 true IL44403A0 (en) | 1974-06-30 |
Family
ID=26992809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL44403A IL44403A0 (en) | 1973-03-16 | 1974-03-12 | Variable capacitance diodes employing a glassy amorphous material as an active layer and methods for their use |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5322036B2 (xx) |
CA (1) | CA1001321A (xx) |
DE (1) | DE2412629A1 (xx) |
FR (1) | FR2221816B1 (xx) |
IL (1) | IL44403A0 (xx) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02223181A (ja) * | 1990-01-19 | 1990-09-05 | Nichidou Denko Kk | アース棒の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3040262A (en) * | 1959-06-22 | 1962-06-19 | Bell Telephone Labor Inc | Light sensitive resonant circuit |
FR1500945A (fr) * | 1966-08-10 | 1967-11-10 | Csf | Système générateur de signaux images pour télévision |
US3564353A (en) * | 1969-04-16 | 1971-02-16 | Westinghouse Electric Corp | Bulk semiconductor switching device formed from amorphous glass type substance and having symmetrical switching characteristics |
-
1974
- 1974-03-08 CA CA194,421A patent/CA1001321A/en not_active Expired
- 1974-03-12 IL IL44403A patent/IL44403A0/xx unknown
- 1974-03-15 FR FR7408902A patent/FR2221816B1/fr not_active Expired
- 1974-03-15 DE DE2412629A patent/DE2412629A1/de active Pending
- 1974-03-16 JP JP3050874A patent/JPS5322036B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5322036B2 (xx) | 1978-07-06 |
FR2221816A1 (xx) | 1974-10-11 |
CA1001321A (en) | 1976-12-07 |
DE2412629A1 (de) | 1974-09-26 |
FR2221816B1 (xx) | 1977-09-30 |
JPS5027487A (xx) | 1975-03-20 |
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