BR9917029B1 - processo para controlar a temperatura de uma massa fundida de silÍcio em um forno. - Google Patents

processo para controlar a temperatura de uma massa fundida de silÍcio em um forno.

Info

Publication number
BR9917029B1
BR9917029B1 BRPI9917029-9A BR9917029A BR9917029B1 BR 9917029 B1 BR9917029 B1 BR 9917029B1 BR 9917029 A BR9917029 A BR 9917029A BR 9917029 B1 BR9917029 B1 BR 9917029B1
Authority
BR
Brazil
Prior art keywords
dendrite
pair
thickness
furnace
control
Prior art date
Application number
BRPI9917029-9A
Other languages
English (en)
Other versions
BR9917029A (pt
Inventor
John R Easoz
Barry Munshower
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BR9917029A publication Critical patent/BR9917029A/pt
Publication of BR9917029B1 publication Critical patent/BR9917029B1/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Laminated Bodies (AREA)
BRPI9917029-9A 1999-02-02 1999-02-02 processo para controlar a temperatura de uma massa fundida de silÍcio em um forno. BR9917029B1 (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1999/002254 WO2000046430A2 (en) 1999-02-02 1999-02-02 Dendrite thickness control system for growing silicon ribbon

Publications (2)

Publication Number Publication Date
BR9917029A BR9917029A (pt) 2002-01-15
BR9917029B1 true BR9917029B1 (pt) 2009-01-13

Family

ID=22272098

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI9917029-9A BR9917029B1 (pt) 1999-02-02 1999-02-02 processo para controlar a temperatura de uma massa fundida de silÍcio em um forno.

Country Status (10)

Country Link
EP (1) EP1196646B1 (pt)
JP (1) JP2002536282A (pt)
KR (1) KR20010108163A (pt)
CN (1) CN1177956C (pt)
AT (1) ATE370263T1 (pt)
AU (1) AU761812B2 (pt)
BR (1) BR9917029B1 (pt)
CA (1) CA2361708C (pt)
DE (1) DE69936883T2 (pt)
WO (1) WO2000046430A2 (pt)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4185076A (en) * 1977-03-17 1980-01-22 Mobil Tyco Solar Energy Corporation Apparatus for controlled growth of silicon and germanium crystal ribbons
US4217165A (en) * 1978-04-28 1980-08-12 Ciszek Theodore F Method of growing a ribbon crystal particularly suited for facilitating automated control of ribbon width
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
IN168114B (pt) * 1986-12-18 1991-02-09 Westinghouse Electric Corp
US4971650A (en) * 1989-09-22 1990-11-20 Westinghouse Electric Corp. Method of inhibiting dislocation generation in silicon dendritic webs
JPH06102590B2 (ja) * 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
US6093244A (en) * 1997-04-10 2000-07-25 Ebara Solar, Inc. Silicon ribbon growth dendrite thickness control system

Also Published As

Publication number Publication date
CN1419612A (zh) 2003-05-21
CA2361708A1 (en) 2000-08-10
DE69936883T2 (de) 2008-02-28
AU761812B2 (en) 2003-06-12
EP1196646B1 (en) 2007-08-15
CA2361708C (en) 2008-04-22
WO2000046430A2 (en) 2000-08-10
AU2492899A (en) 2000-08-25
JP2002536282A (ja) 2002-10-29
WO2000046430A3 (en) 2002-01-03
BR9917029A (pt) 2002-01-15
CN1177956C (zh) 2004-12-01
KR20010108163A (ko) 2001-12-07
EP1196646A2 (en) 2002-04-17
DE69936883D1 (de) 2007-09-27
ATE370263T1 (de) 2007-09-15

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Legal Events

Date Code Title Description
B06A Patent application procedure suspended [chapter 6.1 patent gazette]
B09A Decision: intention to grant [chapter 9.1 patent gazette]
B25C Requirement related to requested transfer of rights

Owner name: EBARA SOLAR, INC. (US)

Free format text: A FIM DE ATENDER O SOLICITADO NA PETICAO DE TRANSFERENCIA NO 020070145465/RJ DE 16/10/2007, QUEIRAFAZER CONSTAR NO DOCUMENTO DE CESSAO A ASSINATURA DA CESSIONARIA E DE DUAS TESTEMUNHAS, DEVIDAMENTE NOTARIZADAS E LEGALIZADAS.

B25L Entry of change of name and/or headquarter and transfer of application, patent and certificate of addition of invention: publication cancelled

Owner name: EBARA SOLAR, INC. (US)

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Owner name: EBARA CORPORATION (JP)

Free format text: TRANSFERIDO DE: EBARA SOLAR, INC.

B16A Patent or certificate of addition of invention granted [chapter 16.1 patent gazette]

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B24H Lapse because of non-payment of annual fees (definitively: art 78 iv lpi)
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